Shock-Resistibility of MEMS-Based Inertial Microswitch under Reverse Directional Ultra-High g Acceleration for IoT Applications

Design, simulation, and testing of a tunable MEMS multi-threshold inertial switch

This paper presents a tunable multi-threshold micro-electromechanical inertial switch with adjustable threshold capability. The demonstrated device combines the advantages of accelerometers in providing quantitative acceleration measurements and g-threshold switches in saving power when in the inactive state upon experiencing acceleration below the thresholds. The designed proof-of-concept device with two thresholds consists of a cantilever microbeam and two stationary electrodes placed at different positions in the sensing direction. The adjustable threshold capability and the effect of the shock duration on the threshold acceleration are analytically investigated using a nonlinear beam model. Results are shown for the relationships among the applied bias voltage, the duration of shock impact, and the tunable threshold. The fabricated prototypes are tested using a shock-table system. The analytical results agree with the experimental results. The designed device concept is very promising for the classification of the shock and impact loads in transportation and healthcare applications.

Design, Simulation, and Fabrication of a New Three-Axis Inertial Switch with a Triangular Movable Electrode Structure

A new three-axis inertial switch is proposed. The triangle-structured movable electrode is designed to improve the inertial switch's dynamic response performance, especially the movable electrode's dynamic stability performance. The static mechanical analysis indicated that the displacement of the movable electrode to the fixed electrode in the sensitive direction is the minimum when the acceleration is applied to this designed inertial switch. The dynamic simulation analysis showed that the threshold of the designed inertial is about 235 g. The threshold in the non-sensitive direction is about 240 g, 270 g, 300 g, and 350 g when the directions of applied acceleration deviate 15°, 30°, 45°, and 60° from the sensitive direction, respectively. These results indicated that the designed inertial could resist the impact in non-sensitive directions and improve the stability in sensitive directions. The prototype of the inertial switch was fabricated and tested successfully. The testing results indicate that the threshold of the fabricated inertial switch is about 219 g. The test results verify the dynamic stability performance of the designed inertial switch.

Research Progress of MEMS Inertial Switches

As a typical type of MEMS acceleration sensor, the inertial switch can alter its on-off state while the environmental accelerations satisfy threshold value. An exhaustive summary of the design concept, performance aspects, and fabrication methods of the micro electromechanical system (MEMS) inertial switch is provided. Different MEMS inertial switch studies were reviewed that emphasized acceleration directional and threshold sensitivity, contact characteristics, and their superiorities and disadvantages. Furthermore, the specific fabrication methods offer an applicability reference for the preparation process for the designed inertial switch, including non-silicon surface micromachining technology, standard silicon micromachining technology, and the special fabrication method for the liquid inertial switch. At the end, the main conclusions of the current challenges and prospects about MEMS inertial switches are drawn to assist with the development of research in the field of future engineering applications.

Reliability of MEMS in Shock Environments: 2000-2020

The reliability of MEMS in shock environments is a complex area which involves structural dynamics, fracture mechanics, and system reliability theory etc. With growth in the use of MEMS in automotive, IoT, aerospace and other harsh environments, there is a need for an in-depth understanding of the reliability of MEMS in shock environments. Despite the contributions of many articles that have overviewed the reliability of MEMS panoramically, a review paper that specifically focuses on the reliability research of MEMS in shock environments is, to date, absent. This paper reviews studies which examine the reliability of MEMS in shock environments from 2000 to 2020 in six sub-areas, which are: (i) response model of microstructure, (ii) shock experimental progresses, (iii) shock resistant microstructures, (iv) reliability quantification models of microstructure, (v) electronics-system-level reliability, and (vi) the coupling phenomenon of shock with other factors. This paper fills the gap around overviews of MEMS reliability in shock environments. Through the framework of these six sub-areas, we propose some directions potentially worthy of attention for future research.

The Design, Simulation and Fabrication of an Omnidirectional Inertial Switch with Rectangular Suspension Spring

An omnidirectional inertial switch with rectangular spring is proposed in this paper, and the prototype has been fabricated by surface micromachining technology. To evaluate the threshold consistency and stability of omnidirectional inertia switch, the stiffness of rectangular suspension springs is analyzed. The simulation result shows that the coupling stiffness of the rectangular spring suspension system in the non-sensitive direction is a little more than that in the sensitive direction, which indicated that the omnidirectional switching system’s stability is reinforced, attributed to the design of rectangular springs. The dynamic response simulation shows that the threshold of the omnidirectional inertial switch using the rectangular suspension spring has high consistency in the horizontal direction. The prototype of an inertial switch is fabricated and tested successfully. The testing results indicate even threshold distribution in the horizontal direction. The threshold acceleration of the designed inertial switch is about 58 g in the X direction and 37 g in the Z direction; the contact time is about 18 μs.

Research Status and Development Trend of MEMS Switches: A Review

MEMS switch is a movable device manufactured by means of semiconductor technology, possessing many incomparable advantages such as a small volume, low power consumption, high integration, etc. This paper reviews recent research of MEMS switches, pointing out the important performance indexes and systematically summarizing the classification according to driving principles. Then, a comparative study of current MEMS switches stressing their strengths and drawbacks is presented, based on performance requirements such as driven voltage, power consumption, and reliability. The efforts of teams to optimize MEMS switches are introduced and the applications of switches with different driving principles are also briefly reviewed. Furthermore, the development trend of MEMS switch and the research gaps are discussed. Finally, a summary and forecast about MEMS switches is given with the aim of providing a reference for future research in this domain.

The Analysis of the Influence of Threshold on the Dynamic Contact Process of a Fabricated Vertically Driven MEMS Inertial Switch

In this work, to evaluate the influence of the threshold on the dynamic contact process, five models (number 1, 2, 3, 4, 5) with different thresholds were proposed and fabricated with surface micromachining technology. The contact time and response time were used to characterize the dynamic contact performance. The dynamic contact processes of the inertial switches with gradually increasing thresholds were researched using analytical, simulation, and experimental methods. The basic working principle analysis of the inertial switch shows that the contact time of the inertial switch with a low-g value can be extended by using a simply supported beam as the fixed electrode, but the high-G inertial needs more elasticity for fixed electrode. The simulation results indicate that the response time and contact time decrease with the increment in the designed threshold. Prototypes were tested using a dropping hammer system, and the test result indicates that the contact time of the inertial switch with a fixed electrode of the simply supported beam is about 15 and 5 μs when the threshold is about 280 and 580 g, respectively. Meanwhile, the contact time can be extended to 100 μs for the inertial switch using a spring as the fixed electrode when the threshold is about 280 and 580 g. These test results not only prove that the spring fixed electrode can effectively extend the contact time, but also prove that the style of the fixed electrode is the deciding factor affecting the contact time of the high-G inertial switch.