An Analytic Approach for Optimal Geometrical Design of GaAs Nanowires for Maximal Light Harvesting in Photovoltaic Cells

Analysis and design of InAs nanowire array based ultra broadband perfect absorber

An ultra-broadband perfect absorber has a wide range of applications which include solar energy harvesting, imaging, photodetection etc. In this regard, InAs nanowire (NW) based structure is investigated in this work for achieving an ultra broadband perfect absorber. Finite difference time domain (FDTD) based numerical analysis has been performed to optimize the InAs nanowire based structure to obtain an efficient light absorber by varying different dimensional parameters. Mie theory and guided mode resonance based theoretical analysis is developed to validate the results and to get an insight into the tunability of the nanowire based structure. Moreover, the theoretical analysis elucidates the underlying physics of light absorption in nanowires. To achieve ultra broadband absorption, multi radii InAs nanowire based arrays are investigated and it is found that they exhibit superior performance compared to single radius NW based structures. The computed light absorption efficiency (LAE) and short circuit current density values are enhanced to 97% and 40.15 mA cm⁻² at 10° angle of incidence for the optimized quad radii NW array within the wavelength range of 300 nm to 1000 nm and 300 nm to 1200 nm, respectively. Moreover, the absorption spectra for these structures are polarization independent and exhibit robust performance for varying angle of incidence. In addition, arrangement of the NW array (hexagonal or square) has negligible effect on the absorption spectra. Such ultra-broadband absorption capability of the proposed structure compared to existing works suggests that the InAs nanowire based structure is very promising as light absorber with prospects in the fields of photo detection, solar power generation, perfect cloaking, photochemistry and other thin film photonic devices.

Mie theory and GMR based theoretical framework support the numerical results that resonant wavelength increases with increasing InAs NW diameter. By employing NWs of different diameters in a single array, an ultra-broadband perfect absorber has been achieved.

Synthesis and Applications of III-V Nanowires

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

Efficient wave optics modeling of nanowire solar cells using rigorous coupled-wave analysis

We investigate the accuracy of rigorous coupled-wave analysis (RCWA) for near-field computations within cylindrical GaAs nanowire solar cells and discover excellent accuracy with low computational cost at long incident wavelengths but poor accuracy at short incident wavelengths. These near fields give the carrier generation rate, and their accurate determination is essential for device modeling. We implement two techniques for increasing the accuracy of the near fields generated by RCWA and give some guidance on parameters required for convergence along with an estimate of their associated computation times. The first improvement removes Gibbs phenomenon artifacts from the RCWA fields, and the second uses the extremely well-converged far-field absorption to rescale the local fields. These improvements allow a computational speedup between 30 and 1000 times for spectrally integrated calculations, depending on the density of the near fields desired. Some spectrally resolved quantities, especially at short wavelengths, remain expensive, but RCWA is still an excellent method for performing those calculations. These improvements open up the possibility of using RCWA for low-cost optical modeling in a full optoelectronic device model of nanowire solar cells.

Enhanced photovoltaic performance of nanowire array solar cells with multiple diameters

A multi-diameter p-i-n junction GaAs nanowire (NW) array architecture is proposed for high-performance solar cells. Coupled three-dimensional optoelectronic simulations are performed to investigate the photovoltaic properties. The NW diameters are randomly selected within the range of 220-400 nm, following the Gaussian distribution. The results show that the absorption strongly depends on the diameter, and the multi-diameter NW array exhibits higher optical absorption, in comparison with the uniform-diameter counterpart. This is because of the superposition of multiple absorption peaks. Moreover, the multi-diameter NW array can efficiently enhance the effective absorption; that is, the depletion region absorption, which directly leads to increased photocurrent. A remarkable efficiency of 17% is obtained for a 16-diameter NW array solar cell with a full width at half maximum of the diameter distribution of 75 nm, higher than the best value (16.1%) of uniform-diameter device with an optimum diameter of 310 nm. This work demonstrates that the native diameter nonuniformity of self-organized nanowires is beneficial for high-performance photovoltaics with low cost and a simple fabrication process.