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Pitters J, Croshaw J, Achal R, Livadaru L, Ng S, Lupoiu R, Chutora T, Huff T, Walus K, Wolkow RA. Atomically Precise Manufacturing of Silicon Electronics. ACS NANO 2024; 18:6766-6816. [PMID: 38376086 PMCID: PMC10919096 DOI: 10.1021/acsnano.3c10412] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Revised: 02/01/2024] [Accepted: 02/06/2024] [Indexed: 02/21/2024]
Abstract
Atomically precise manufacturing (APM) is a key technique that involves the direct control of atoms in order to manufacture products or components of products. It has been developed most successfully using scanning probe methods and has received particular attention for developing atom scale electronics with a focus on silicon-based systems. This review captures the development of silicon atom-based electronics and is divided into several sections that will cover characterization and atom manipulation of silicon surfaces with scanning tunneling microscopy and atomic force microscopy, development of silicon dangling bonds as atomic quantum dots, creation of atom scale devices, and the wiring and packaging of those circuits. The review will also cover the advance of silicon dangling bond logic design and the progress of silicon quantum atomic designer (SiQAD) simulators. Finally, an outlook of APM and silicon atom electronics will be provided.
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Affiliation(s)
- Jason Pitters
- Nanotechnology
Research Centre, National Research Council
of Canada, Edmonton, Alberta T6G 2M9, Canada
| | - Jeremiah Croshaw
- Department
of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada
| | - Roshan Achal
- Department
of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada
- Quantum
Silicon Inc., Edmonton, Alberta T6G 2M9, Canada
| | - Lucian Livadaru
- Department
of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada
- Quantum
Silicon Inc., Edmonton, Alberta T6G 2M9, Canada
| | - Samuel Ng
- Department
of Electrical and Computer Engineering, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Robert Lupoiu
- School
of Engineering, Stanford University, Stanford, California 94305, United States
| | - Taras Chutora
- Department
of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada
| | - Taleana Huff
- Canadian
Bank Note Company, Ottawa, Ontario K1Z 1A1, Canada
| | - Konrad Walus
- Department
of Electrical and Computer Engineering, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Robert A. Wolkow
- Department
of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada
- Quantum
Silicon Inc., Edmonton, Alberta T6G 2M9, Canada
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Sloan PA, Rusimova KR. A self-consistent model to link surface electronic band structure to the voltage dependence of hot electron induced molecular nanoprobe experiments. NANOSCALE ADVANCES 2022; 4:4880-4885. [PMID: 36381505 PMCID: PMC9642357 DOI: 10.1039/d2na00644h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Accepted: 10/12/2022] [Indexed: 06/16/2023]
Abstract
Understanding the ultra-fast transport properties of hot charge carriers is of significant importance both fundamentally and technically in applications like solar cells and transistors. However, direct measurement of charge transport at the relevant nanometre length scales is challenging with only a few experimental methods demonstrated to date. Here we report on molecular nanoprobe experiments on the Si(111)-7 × 7 at room temperature where charge injected from the tip of a scanning tunnelling microscope (STM) travels laterally across a surface and induces single adsorbate toluene molecules to react over length scales of tens of nanometres. A simple model is developed for the fraction of the tunnelling current captured into each of the surface electronic bands with input from only high-resolution scanning tunnelling spectroscopy (STS) of the clean Si(111)-7 × 7 surface. This model is quantitatively linked to the voltage dependence of the molecular nanoprobe experiments through a single manipulation probability (i.e. fitting parameter) per state. This model fits the measured data and gives explanation to the measured voltage onsets, exponential increase in the measured manipulation probabilities and plateau at higher voltages. It also confirms an ultrafast relaxation to the bottom of a surface band for the injected charge after injection, but before the nonlocal spread across the surface.
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Affiliation(s)
- Peter A Sloan
- Department of Physics, University of Bath Bath BA2 7AY UK
- Centre for Nanoscience and Nanotechnology, University of Bath Bath BA2 7AY UK
| | - Kristina R Rusimova
- Department of Physics, University of Bath Bath BA2 7AY UK
- Centre for Nanoscience and Nanotechnology, University of Bath Bath BA2 7AY UK
- Centre for Photonics and Photonic Materials, University of Bath Bath BA2 7AY UK
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3
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Pavlova TV, Shevlyuga V. Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state. J Chem Phys 2022; 157:124705. [DOI: 10.1063/5.0102546] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Silicon dangling bonds (DBs) on an adsorbate-covered Si(100) surface can be created in a scanning tunneling microscope (STM) with high precision required for a number of applications. However, vacancies containing DBs can diffuse, disrupting precisely created structures. In this work, we study the diffusion of Br vacancies on a Si(100)-2x1-Br surface in an STM under typical imaging conditions. In agreement with previous work, Br vacancies diffuse at a positive sample bias voltage. Here, we demonstrated that only vacancies containing a positively charged DB hop across the two atoms of a single Si dimer, while vacancies containing neutral and negatively charged DBs do not. Calculations based on the density functional theory confirmed that positively charged Br (and Cl) vacancies have a minimum activation barrier. We propose that diffusion operates by both one-electron and two-electron mechanisms depending on the applied voltage. Our results show that the DB charge has a critical effect on the vacancy diffusion. This effect should be taken into account when imaging surface structures with charged DBs, as well as when studying the diffusion of other atoms and molecules on the Si(100) surface with vacancies in an adsorbate layer.
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Affiliation(s)
| | - Vladimir Shevlyuga
- Institute of General Physics named after A P Prokhorov Russian Academy of Sciences, Russia
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Pavlova TV. Hydrogen inserted into the Si(100)-2 × 1-H surface: a first-principles study. Phys Chem Chem Phys 2020; 22:21851-21857. [PMID: 32966437 DOI: 10.1039/d0cp03691a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Hydrogen can be inserted into Si(100)-2 × 1-H during surface preparation or during the hydrogen desorption lithography used to create atomic-scale devices. Here, a hydrogen atom inserted into a hydrogen monolayer on the Si(100)-2 × 1 surface has been studied using density functional theory. Hydrogen-induced defects were considered in their neutral, negative, and positive charge states. It was found that hydrogen forms a dihydride unit on the surface in the most stable neutral and negative charge states. Hydrogen located in the groove between dimer rows is also one of the most stable negative charge states. In the positive charge state, hydrogen forms a three-center bond inside a Si dimer, Si-H-Si, similar to the bulk case. A comparison of simulated scanning tunneling microscopy (STM) images with the experimental data available in the literature showed that neutral and negatively charged hydrogen-induced defects were already observed in experiments. The results reveal that the H atom inserted into a hydrogen monolayer on the Si(100)-2 × 1 surface can lead to the formation of a positively or negatively charged defect. It is shown that H atoms in the considered configurations can play a role in various surface reactions.
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Affiliation(s)
- Tatiana V Pavlova
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia. and National Research University Higher School of Economics, Moscow, Russia
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Kislitsyn DA, Mills JM, Chiu SK, Taber BN, Barnes JD, Gervasi CF, Goforth AM, Nazin GV. Creation and Annihilation of Charge Traps in Silicon Nanocrystals: Experimental Visualization and Spectroscopy. J Phys Chem Lett 2018; 9:710-716. [PMID: 29365270 DOI: 10.1021/acs.jpclett.7b03299] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Recent studies have shown the presence of an amorphous surface layer in nominally crystalline silicon nanocrystals (SiNCs) produced by some of the most common synthetic techniques. The amorphous surface layer can serve as a source of deep charge traps, which can dramatically affect the electronic and photophysical properties of SiNCs. We present results of a scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS) study of individual intragap states observed on the surfaces of hydrogen-passivated SiNCs deposited on the Au(111) surface. STS measurements show that intragap states can be formed reversibly when appropriate voltage-current pulses are applied to individual SiNCs. Analysis of STS spectra suggests that the observed intragap states are formed via self-trapping of charge carriers injected into SiNCs from the STM tip. Our results provide a direct visualization of the charge trap formation in individual SiNCs, a level of detail which until now had been achieved only in theoretical studies.
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Affiliation(s)
- Dmitry A Kislitsyn
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon , 1253 University of Oregon, Eugene, Oregon 97403, United States
| | - Jon M Mills
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon , 1253 University of Oregon, Eugene, Oregon 97403, United States
| | - Sheng-Kuei Chiu
- Department of Chemistry, Portland State University , Portland, Oregon 97201, United States
| | - Benjamen N Taber
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon , 1253 University of Oregon, Eugene, Oregon 97403, United States
| | - James D Barnes
- Department of Chemistry, Portland State University , Portland, Oregon 97201, United States
| | - Christian F Gervasi
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon , 1253 University of Oregon, Eugene, Oregon 97403, United States
| | - Andrea M Goforth
- Department of Chemistry, Portland State University , Portland, Oregon 97201, United States
| | - George V Nazin
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon , 1253 University of Oregon, Eugene, Oregon 97403, United States
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Utecht M, Pan T, Klamroth T, Palmer RE. Quantum Chemical Cluster Models for Chemi- and Physisorption of Chlorobenzene on Si(111)-7×7. J Phys Chem A 2014; 118:6699-704. [DOI: 10.1021/jp504208d] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Manuel Utecht
- Institut für Chemie, Universität Potsdam, Karl-Liebknecht-Strasse 24-25, D-14476 Potsdam-Golm, Germany
| | - Tianluo Pan
- Nanoscale
Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT, U.K
| | - Tillmann Klamroth
- Institut für Chemie, Universität Potsdam, Karl-Liebknecht-Strasse 24-25, D-14476 Potsdam-Golm, Germany
| | - Richard E. Palmer
- Nanoscale
Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT, U.K
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Zenichowski K, Nacci C, Fölsch S, Dokić J, Klamroth T, Saalfrank P. STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2012; 24:394009. [PMID: 22964350 DOI: 10.1088/0953-8984/24/39/394009] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
The scanning tunnelling microscope (STM)-induced switching of a single cyclooctadiene molecule between two stable conformations chemisorbed on a Si(100) surface is investigated using an above threshold model including a neutral ground state and an ionic excited state potential. Switching was recently achieved experimentally with an STM operated at cryogenic temperatures (Nacci et al 2008 Phys. Rev. B 77 121405(R)) and rationalized by a below threshold model using just a single potential energy surface (Nacci et al 2009 Nano Lett. 9 2997). In the present paper, we show that experimental key findings on the inelastic electron tunnelling (IET) switching can also be rationalized using an above threshold density matrix model, which includes, in addition to the neutral ground state potential, an anionic or cationic excited potential. We use one and two-dimensional potential energy surfaces. Furthermore, the influence of two key parameters of the density matrix description, namely the electronic lifetime of the ionic resonance and the vibrational lifetimes, on the ground state potential are discussed.
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Affiliation(s)
- K Zenichowski
- Institut für Chemie, Universität Potsdam, Karl-Liebknecht-Strasse 24-25, D-14476 Potsdam-Golm, Germany
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Bellec A, Riedel D, Dujardin G, Boudrioua O, Chaput L, Stauffer L, Sonnet P. Nonlocal activation of a bistable atom through a surface state charge-transfer process on Si(100)-(2×1):H. PHYSICAL REVIEW LETTERS 2010; 105:048302. [PMID: 20867890 DOI: 10.1103/physrevlett.105.048302] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2009] [Indexed: 05/29/2023]
Abstract
The reversible hopping of a bistable atom on the Si(100)-(2×1):H surface is activated nonlocally by hole injection into Si-Si bond surface states with a low temperature (5 K) scanning tunneling microscope. In the contact region, at short distances (<1.5 nm) between the hole injection site and the bistable atom, the hopping yield of the bistable atom exhibits remarkable variations as a function of the hole injection site. It is explained by the density of state distribution along the silicon bond network that shows charge-transfer pathways between the injection sites and the bistable atom.
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Affiliation(s)
- A Bellec
- Institut des Sciences Moléculaires d'Orsay, CNRS, Bâtiment 210, Université Paris Sud, 91405 Orsay, France
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9
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Andrianov I, Saalfrank P. Free vibrational relaxation of H adsorbed on a Si(1 0 0) surface investigated with the multi-configurational time-dependent Hartree method. Chem Phys Lett 2006. [DOI: 10.1016/j.cplett.2006.11.067] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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10
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Saalfrank P. Quantum Dynamical Approach to Ultrafast Molecular Desorption from Surfaces. Chem Rev 2006; 106:4116-59. [PMID: 17031982 DOI: 10.1021/cr0501691] [Citation(s) in RCA: 130] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Peter Saalfrank
- Theoretische Chemie, Institut für Chemie, Universität Potsdam, Karl-Liebknecht-Strasse 24-25, D-14476 Potsdam-Golm, Germany
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11
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Andrianov I, Saalfrank P. Theoretical study of vibration-phonon coupling of H adsorbed on a Si(100) surface. J Chem Phys 2006; 124:034710. [PMID: 16438603 DOI: 10.1063/1.2161191] [Citation(s) in RCA: 55] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022] Open
Abstract
In this paper a perturbation-theory study of vibrational lifetimes for the bending and stretching modes of hydrogen adsorbed on a Si(100) surface is presented. The hydrogen-silicon interaction is treated with a semiempirical bond-order potential. Calculations are performed for H-Si clusters of different sizes. The finite lifetime is due to vibration-phonon coupling, which is assumed to be linear or bilinear in the phonon and nonlinear in the H-Si stretching and bending modes. Lifetimes and vibrational transition rates are evaluated with one- and two-phonon processes taken into account. Temperature effects are also discussed. In agreement with the experiment and previous theoretical treatment it is found that the H-Si (upsilon(s) = 1) stretching vibration decays on a nanosecond timescale, whereas for the H-Si (upsilon(b) = 1) bending mode a picosecond decay is predicted. For higher-excited vibrations, simple scaling laws are found if the excitation energies are not too large. The relaxation mechanisms for the excited H-Si stretching and the H-Si bending modes are analyzed in detail.
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Affiliation(s)
- Ivan Andrianov
- Universität Potsdam, Institut für Chemie, Karl-Liebknecht-Strasse 24-25, D-14476 Potsdam-Golm, Germany
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Comtet G, Dujardin G, Hellner L, Lastapis M, Martin M, Mayne AJ, Riedel D. Atomic-scale STM experiments on semiconductor surfaces: towards molecular nanomachines. PHILOSOPHICAL TRANSACTIONS. SERIES A, MATHEMATICAL, PHYSICAL, AND ENGINEERING SCIENCES 2004; 362:1217-1226. [PMID: 15306473 DOI: 10.1098/rsta.2004.1374] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
The electronic or quantum control of individual molecules with the scanning tunnelling microscope offers exciting perspectives on operating molecular nanomachines. This implies the use of semiconductor surfaces rather than metallic surfaces which would rapidly quench the electronic excitations. We review recent results illustrating the state of the art and the main problems which need to be solved: the choice, design and properties of functionalized organic molecules on semiconductor surfaces; the control of the inelastic electronic channels through a single molecule; and the search for well-controlled atomic-scale wide-band-gap semiconductor surfaces.
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Affiliation(s)
- G Comtet
- Laboratoire de Photophysique Moléculaire, Bât. 210, Université Paris-Sud, 91405 Orsay, France
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Dujardin G, Mayne AJ, Rose F. Temperature control of electronic channels through a single atom. PHYSICAL REVIEW LETTERS 2002; 89:036802. [PMID: 12144409 DOI: 10.1103/physrevlett.89.036802] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2001] [Indexed: 05/23/2023]
Abstract
The elastic electronic channels through a single hydrogen atom adsorbed on a Ge(111)-c(2 x 8) surface have been investigated by scanning tunneling microscopy and I(V) spectroscopy, whereas inelastic channels have been probed by the vertical and horizontal manipulation of individual hydrogen atoms. The substrate temperature, over the range 30-300 K, has proven to be a powerful parameter to freeze specific electronic channels, offering the possible control of elastic and inelastic channels through a single atom. This opens up very interesting perspectives for controlling the operation of nanodevices.
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Affiliation(s)
- Gérald Dujardin
- Laboratoire de Photophysique Moléculaire, Bâtiment 210, Université Paris-Sud, 91405 Orsay, France
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Alavi S, Seideman T. Reaction induced by a scanning tunneling microscope: Theory and application. J Chem Phys 2001. [DOI: 10.1063/1.1383068] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022] Open
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