Electrochemical lithography: fabrication of nanoscale Si tips by porous anodization of Al/Si wafer

Fabrication and field emission property of a Si nanotip array

Using a Si-based porous anodic alumina membrane as a mask, we demonstrate a way to pattern Si surface. After removing the SiO(2) nanoislands formed during anodization of the Al/Si interface, we obtain a Si nanotip array on the surface of a Si wafer. This array shows an excellent field emission property with a low turn-on field of 8.5 V µm(-1). The Fowler-Nordheim plot obtained is linearly dependent, indicating that the emission current arises from the quantum tunnelling effect. The Si nanotip array can be expected to have important applications in nanoelectronic devices.