Electronic and magnetic properties of C-adsorbed graphene: a first-principles study

Dumbbell configuration of silicon adatom defects on silicene nanoribbons

Using density functional theory (DFT), we performed theoretical investigation on structural, energetic, electronic, and magnetic properties of pure armchair silicene nanoribbons with edges terminated with hydrogen atoms (ASiNRs:H), and the absorptions of silicon (Si) atom(s) on the top of ASiNRs:H. The calculated results show that Si atoms prefer to adsorb on the top site of ASiNRs:H and form the single- and/or di-adatom defects depending on the numbers. Si absorption defect(s) change electronic and magnetic properties of ASiNRs:H. Depending on the adsorption site the band gap of ASiNRs:H can be larger or smaller. The largest band gap of 1 Si atom adsorption is 0.64 eV at site 3, the adsorption of 2 Si atoms has the largest band gap of 0.44 eV at site 1-D, while the adsorption at sites5 and 1-E turn into metallic. The formation energies of Si adsorption show that adatom defects in ASiNRs:H are more preferable than pure ASiNRs:H with silicon atom(s). 1 Si adsorption prefers to be added on the top site of a Si atom and form a single-adatom defect, while Si di-adatom defect has lower formation energy than the single-adatom and the most energetically favorable adsorption is at site 1-F. Si adsorption atoms break spin-degeneracy of ASiNRs:H lead to di-adatom defect at site 1-G has the highest spin moment. Our results suggest new ways to engineer the band gap and magnetic properties silicene materials.

Defects in silicene: vacancy clusters, extended line defects, and Di-adatoms

Defects are almost inevitable during the fabrication process, and their existence strongly affects thermodynamic and (opto)electronic properties of two-dimensional materials. Very recent experiments have provided clear evidence for the presence of larger multi-vacancies in silicene, but their structure, stability, and formation mechanism remain largely unexplored. Here, we present a detailed theoretical study of silicene monolayer containing three types of defects: vacancy clusters, extended line defects (ELDs), and di-adatoms. First-principles calculations, along with ab initio molecular dynamics simulations, revealed the coalescence tendency of small defects and formation of highly stable vacancy clusters. The 5|8|5 ELD – the most favorable extended defect in both graphene and silicene sheets – is found to be easier to form in the latter case due to the mixed sp²/sp³ hybridization of silicon. In addition, hybrid functional calculations that contain part of the Hatree-Fock exchange energy demonstrated that the introduction of single and double silicon adatoms significantly enhances the stability of the system, and provides an effective approach on tuning the magnetic moment and band gap of silicene.

Controlling the physicochemical state of carbon on graphene using focused electron-beam-induced deposition

Focused electron-beam-induced deposition (FEBID) is a promising nanolithography technique using "direct-write" patterning by carbon line and dot deposits on graphene. Understanding interactions between deposited carbon molecules and graphene enables highly localized modification of graphene properties, which is foundational to the FEBID utility as a nanopatterning tool. In this study, we demonstrate a unique possibility to induce dramatically different adsorption states of FEBID-produced carbon deposits on graphene, through density functional theory calculations and complementary Raman experiments. Specifically, an amorphous carbon deposit formed by direct irradiation of high energy primary electrons exhibits unusually strong interactions with graphene via covalent bonding, whereas the FEBID carbon formed due to low-energy secondary electrons is only weakly interacting with graphene via physisorption. These observations not only are of fundamental importance to basic physical chemistry of FEBID carbon-graphene interactions but also enable the use of selective laser-assisted postdeposition ablation to effectively remove the parasitically deposited, physisorbed carbon films for improving FEBID patterning resolution.