Polarization Controlled Assembly of Ultrathin Thiorphan Nanostructures on ZnO Surface Facets

Despite the importance of thiorphan as a small molecule with vital biological roles, its interactions with zinc oxide (ZnO) nanomaterials that are prospective in drug delivery and theranostic applications have not yet been sufficiently explored. Here the impact of surface polarity of different ZnO facets on thiorphan adsorption is studied both experimentally by atomic force microscopy (AFM) and angle resolved X-ray photoelectron spectroscopy (XPS) and theoretically by force field molecular dynamics (FFMD) and density functional tight binding simulations (DFTB). Polar ZnO surfaces cause the formation of thiorphan nanodots, where the size of the nanodots depends on the direction of dipoles: small (4 nm) nanodots are formed on Zn-face ZnO, while large (25 nm) nanodots are formed on O-face ZnO. Nonpolar ZnO surfaces cause self-assembly into layered nanoislands with characteristic 4 nm layer thickness, which subsequently merge into rigid nanolayers. The self-assembly is shown to be controlled solely by the effect of surface dipole electric field orientation and magnitude, whereas effects of surface chemistry or solution are negligible. The results thus also show a way for controlling the assembly of thiorphan and other molecular nanomaterials for diverse applications.

Selectively Patterned Regrowth of Bilayer Graphene for Self-Integrated Electronics by Sequential Chemical Vapor Deposition

There is a critical demand for the highly qualified synthesis of graphene with precisely controlled thickness over a large coverage area. Selective growth can be considered as one method of preparing a vertically stacked graphene, but it usually requires elaborately alloyed substrates for chemical vapor deposition (CVD). Here, we report on a newly developed synthesis strategy for a selectively patterned grown graphene sheet in a spatially defined multithickness scale, exhibiting single- and bilayer graphene produced by a conventional CVD process. In particular, a sequential CVD growth technique on a single Cu substrate was used to produce highly ordered and alternatively patterned single- and bilayer graphene, maintaining its continuous configuration in a simplified and scalable manner. Our regrowth process did not require multiple transfer procedures or an alloying catalytic substrate to satisfy the properties of graphene associated with the needs for various applications. We also investigated the most valid mechanisms for our regrowth CVD process, which suggests that it is useful for the cost-effective synthetic approach into a built-in heterostructured single- and bilayer graphene. Finally, we demonstrated the possible accesses of transparent flexible electrodes and monolithically self-integrated all-graphene-based thin-film transistors to fully utilize regrown graphene.

Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

Graphene single crystals: size and morphology engineering

Recently developed chemical vapor deposition (CVD) is considered as an effective way to large-area and high-quality graphene preparation due to its ultra-low cost, high controllability, and high scalability. However, CVD-grown graphene film is polycrystalline, and composed of numerous grains separated by grain boundaries, which are detrimental to graphene-based electronics. Intensive investigations have been inspired on the controlled growth of graphene single crystals with the absence of intrinsic defects. As the two most concerned parameters, the size and morphology serve critical roles in affecting properties and understanding the growth mechanism of graphene crystals. Therefore, a precise tuning of the size and morphology will be of great significance in scale-up graphene production and wide applications. Here, recent advances in the synthesis of graphene single crystals on both metals and dielectric substrates by the CVD method are discussed. The review mainly covers the size and morphology engineering of graphene single crystals. Furthermore, recent progress in the growth mechanism and device applications of graphene single crystals are presented. Finally, the opportunities and challenges are discussed.

Repeated growth-etching-regrowth for large-area defect-free single-crystal graphene by chemical vapor deposition

Reducing nucleation density and healing structural defects are two challenges for fabricating large-area high-quality single-crystal graphene, which is essential for its electronic and optoelectronic applications. We have developed a method involving chemical vapor deposition (CVD) growth followed by repeated etching-regrowth, to solve both problems at once. Using this method, we can obtain single-crystal graphene domains with a size much larger than that allowed by the nucleation density in the initial growth and efficiently heal structural defects similar to graphitization but at a much lower temperature, both of which are impossible to realize by conventional CVD. Using this method with Pt as a growth substrate, we have grown ∼3 mm defect-free single-crystal graphene domains with a carrier mobility up to 13,000 cm2 V(-1) s(-1) under ambient conditions.