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Ahmad F, Kandpal K, Singh R, Kumar R, Kumar P. Aberrant photoelectric effect in the topological insulator/n-GaN heterojunction (Bi 2Te 3/n-GaN) under unpolarized illumination. NANOSCALE 2024; 16:604-613. [PMID: 38050855 DOI: 10.1039/d3nr03360k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
A topological insulator has a unique graphene-like Dirac cone conducting surface state, which is excellent for broadband absorption and photodetector applications. Experimental investigations on the Bi2Te3/n-GaN heterojunction exhibited an aberrant photoelectric effect under the influence of unpolarized light. Transport measurements of the Bi2Te3/n-GaN heterojunction revealed a negative photoconductance, with a sudden increase in resistance. This was consistent with the applied range of wavelength and power used for incident light while it was contrary to the usual gap-state transition model, which states that a negative conductance is due to the trapping of charge carriers. The observed aberrant photoelectric effect seen in Bi2Te3/n-GaN heterojunction devices was due to the polycrystalline nature of the Bi2Te3 topological insulator film, where the incident photon-induced bandgap in the Dirac cone surface state resulted in a negative photoelectric effect. This phenomenon opens the possibility for applications in highly sensitive photodetectors and non-volatile memories, along with employing the bandgap-opening concept in retinomorphic devices.
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Affiliation(s)
- Faizan Ahmad
- Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ-85281, USA.
| | - Kavindra Kandpal
- Department of Electronics and Communication Engineering, IIIT-Allahabad, Prayagraj, 211012, India
| | - Roshani Singh
- Spintronics and Magnetic Materials Laboratory, Department of Applied Sciences, IIIT-Allahabad, Prayagraj, 211012, India.
| | - Rachana Kumar
- ASSIST Division, CSIR-Indian Institute of Toxicology Research, Lucknow, Uttar Pradesh, 226024, India
| | - Pramod Kumar
- Spintronics and Magnetic Materials Laboratory, Department of Applied Sciences, IIIT-Allahabad, Prayagraj, 211012, India.
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Shi Z, Zhang H, Khan K, Cao R, Zhang Y, Ma C, Tareen AK, Jiang Y, Jin M, Zhang H. Two-dimensional materials toward Terahertz optoelectronic device applications. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C: PHOTOCHEMISTRY REVIEWS 2022. [DOI: 10.1016/j.jphotochemrev.2021.100473] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2023]
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Mapping propagation of collective modes in Bi 2Se 3 and Bi 2Te 2.2Se 0.8 topological insulators by near-field terahertz nanoscopy. Nat Commun 2021; 12:6672. [PMID: 34795216 PMCID: PMC8602307 DOI: 10.1038/s41467-021-26831-6] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2021] [Accepted: 10/25/2021] [Indexed: 11/09/2022] Open
Abstract
Near-field microscopy discloses a peculiar potential to explore novel quantum state of matter at the nanoscale, providing an intriguing playground to investigate, locally, carrier dynamics or propagation of photoexcited modes as plasmons, phonons, plasmon-polaritons or phonon-polaritons. Here, we exploit a combination of hyperspectral time domain spectroscopy nano-imaging and detectorless scattering near-field optical microscopy, at multiple terahertz frequencies, to explore the rich physics of layered topological insulators as Bi2Se3 and Bi2Te2.2Se0.8, hyperbolic materials with topologically protected surface states. By mapping the near-field scattering signal from a set of thin flakes of Bi2Se3 and Bi2Te2.2Se0.8 of various thicknesses, we shed light on the nature of the collective modes dominating their optical response in the 2-3 THz range. We capture snapshots of the activation of transverse and longitudinal optical phonons and reveal the propagation of sub-diffractional hyperbolic phonon-polariton modes influenced by the Dirac plasmons arising from the topological surface states and of bulk plasmons, prospecting new research directions in plasmonics, tailored nanophotonics, spintronics and quantum technologies.
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Yang M, Wang J, Zhao Y, He L, Ji C, Liu X, Zhou H, Wu Z, Wang X, Jiang Y. Three-Dimensional Topological Insulator Bi 2Te 3/Organic Thin Film Heterojunction Photodetector with Fast and Wideband Response from 450 to 3500 Nanometers. ACS NANO 2019; 13:755-763. [PMID: 30566317 DOI: 10.1021/acsnano.8b08056] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In the pursuit of broadband photodetection materials from visible to mid-IR region, the fresh three-dimensional topological insulators (3D TIs) are theoretically predicted to be a promising candidate due to its Dirac-like stable surface state and high absorption rate. In this work, a self-powered inorganic/organic heterojunction photodetector based on n-type 3D TIs Bi2Te3 combined with p-type pentacene thin film was designed and fabricated. Surprisingly, it was found that the Bi2Te3/pentacene heterojunction photodetector exhibited a fast and wideband response from 450 to 3500 nm. The optimized responsivity of photodetector reached 14.89 A/W, along with the fast response time of 1.89 ms and the ultrahigh external quantum efficiency of 2840%. Moreover, at the mid-IR 3500 nm, our devices demonstrated a responsivity of 1.55 AW-1, which was several orders of magnitude higher than that of previous 3D TIs photodetector. These excellent properties indicate that the inorganic/organic heterojunction, that is, the combination of 3D TIs with organic materials, is an exciting structure for high performance photodetectors in the wideband detection region. On account of the fact that the device is constructed on mica substrate, this work also represents a potential scenario for flexible optoelectronic devices.
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Affiliation(s)
- Ming Yang
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China
| | - Jun Wang
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China
| | - Yafei Zhao
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , P.R. China
| | - Liang He
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , P.R. China
| | - Chunhui Ji
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China
| | - Xianchao Liu
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China
| | - Hongxi Zhou
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China
| | - Zhiming Wu
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , P.R. China
| | - Yadong Jiang
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China
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Makino K, Kuromiya S, Takano K, Kato K, Nakajima M, Saito Y, Tominaga J, Iida H, Kinoshita M, Nakano T. THz Pulse Detection by Multilayered GeTe/Sb 2Te 3. ACS APPLIED MATERIALS & INTERFACES 2016; 8:32408-32413. [PMID: 27933830 DOI: 10.1021/acsami.6b11418] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We proposed and demonstrated terahertz (THz) pulse detection by means of multilayered GeTe/Sb2Te3 phase-change memory materials that are also known as a multilayer topological insulator-normal insulator (MTN) system. THz time-domain spectroscopy measurement was performed for MTN films with different multilayer repetitions as well as a conventional as-grown Ge-Te-Sb (GST) alloy film. It was found that MTNs absorb THz waves and that the absorption coefficient depends on the number of layers, while the as-grown GST alloy film was almost transparent for THz waves. Simple MTN-based THz detection devices were fabricated, and the THz-induced change in the current signal was measured when a DC bias voltage was applied between the electrodes. We confirmed that irradiation of THz pulse causes a decrease in the resistance of the MTNs. This result indicates that our devices are capable of THz detection.
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Affiliation(s)
- Kotaro Makino
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8565, Japan
| | - Shota Kuromiya
- Institute of Laser Engineering, Osaka University , Suita, Osaka 565-0871, Japan
| | - Keisuke Takano
- Institute of Laser Engineering, Osaka University , Suita, Osaka 565-0871, Japan
| | - Kosaku Kato
- Institute of Laser Engineering, Osaka University , Suita, Osaka 565-0871, Japan
| | - Makoto Nakajima
- Institute of Laser Engineering, Osaka University , Suita, Osaka 565-0871, Japan
| | - Yuta Saito
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8565, Japan
| | - Junji Tominaga
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8565, Japan
| | - Hitoshi Iida
- National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8563, Japan
| | - Moto Kinoshita
- National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8563, Japan
| | - Takashi Nakano
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8565, Japan
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Yao JD, Shao JM, Li SW, Bao DH, Yang GW. Polarization dependent photocurrent in the Bi2Te3 topological insulator film for multifunctional photodetection. Sci Rep 2015; 5:14184. [PMID: 26373684 PMCID: PMC4570977 DOI: 10.1038/srep14184] [Citation(s) in RCA: 51] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/19/2015] [Accepted: 08/19/2015] [Indexed: 11/21/2022] Open
Abstract
Three dimensional Z2 Topological insulator (TI) is an unconventional phase of quantum matter possessing insulating bulk state as well as time-reversal symmetry-protected Dirac-like surface state, which is demonstrated by extensive experiments based on surface sensitive detection techniques. This intriguing gapless surface state is theoretically predicted to exhibit many exotic phenomena when interacting with light, and some of them have been observed. Herein, we report the first experimental observation of novel polarization dependent photocurrent of photodetectors based on the TI Bi2Te3 film under irradiation of linearly polarized light. This photocurrent is linearly dependent on both the light intensity and the applied bias voltage. To pursue the physical origin of the polarization dependent photocurrent, we establish the basic TI surface state model to treat the light irradiation as a perturbation, and we adopt the Boltzmann equation to calculate the photocurrent. It turns out that the theoretical results are in nice qualitative agreement with the experiment. These findings show that the polycrystalline TI Bi2Te3 film working as a multifunctional photodetector can not only detect the light intensity, but also measure the polarization state of the incident light, which is remarkably different from conventional photodetectors that usually only detect the light intensity.
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Affiliation(s)
- J D Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - J M Shao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - S W Li
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - D H Bao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - G W Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
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Yao J, Shao J, Wang Y, Zhao Z, Yang G. Ultra-broadband and high response of the Bi2Te3-Si heterojunction and its application as a photodetector at room temperature in harsh working environments. NANOSCALE 2015; 7:12535-12541. [PMID: 26138000 DOI: 10.1039/c5nr02953h] [Citation(s) in RCA: 75] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Broadband photodetection is central to various technological applications including imaging, sensing and optical communications. On account of their Dirac-like surface state, Topological insulators (TIs) are theoretically predicted to be promising candidate materials for broadband photodetection from the infrared to the terahertz. Here, we report a vertically-constructed ultra-broadband photodetector based on a TI Bi2Te3-Si heterostructure. The device demonstrated room-temperature photodetection from the ultraviolet (370.6 nm) to terahertz (118 μm) with good reproducibility. Under bias conditions, the visible responsivity reaches ca. 1 A W(-1) and the response time is better than 100 ms. As a self-powered photodetector, it exhibits extremely high photosensitivity approaching 7.5 × 10(5) cm(2) W(-1), and decent detectivity as high as 2.5 × 10(11) cm Hz(1/2) W(-1). In addition, such a prototype device without any encapsulation suffers no obvious degradation after long-time exposure to air, high-energy UV illumination and acidic treatment. In summary, we demonstrate that TI-based heterostructures hold great promise for addressing the long lasting predicament of stable room-temperature high-performance broadband photodetectors.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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