Graphene nanowalls formation investigated by Electron Energy Loss Spectroscopy

The properties of layered materials are significantly dependent on their lattice orientations. Thus, the growth of graphene nanowalls (GNWs) on Cu through PECVD has been increasingly studied, yet the underlying mechanisms remain unclear. In this study, we examined the GNWs/Cu interface and investigated the evolution of their microstructure using advanced Scanning transmission electron microscopy and Electron Energy Loss Spectroscopy (STEM-EELS). GNWs interface and initial root layers of comprise graphitic carbon with horizontal basal graphene (BG) planes that conform well to the catalyst surface. In the vertical section, the walls show a mix of graphitic and turbostratic carbon, while the latter becomes more noticeable close to the top edges of the GMWs film. Importantly, we identified growth process began with catalysis at Cu interface forming BG, followed by defect induction and bending at 'coalescence points' of neighboring BG, which act as nucleation sites for vertical growth. We reported that although classical thermal CVD mechanism initially dominates, growth of graphene later deviates a few nanometers from the interface to form GNWs. Nascent walls are no longer subjected to the catalytic action of Cu, and their development is dominated by the stitching of charged carbon species originating in the plasma with basal plane edges.

Position-Induced Controllable Growth of Vertically Oriented Graphene Using Plasma-Enhanced Chemical Vapor Deposition

Because the morphology of vertically oriented graphene (VG) synthesized by the plasma-enhanced chemical vapor deposition process determines the application performance of VG, morphology control is always an important part of the research. A concise correspondence between plasma and the morphology of VG is the key to investigating the morphology control of VG, which is still under research. In this study, a simple but effective parameter, position, is used to grow VG, by which the continuous morphology evolution of VG is realized. As a result, the morphology of VGs varies from a porous structure to a "wall-like" structure, thus leading to a continuous change in its hydrophobicity and thermal emissivity. An ultrahigh emissivity of 0.999 with superhydrophobicity is obtained among these VGs, showing great potential in the area of the black body and infrared thermometer. Finally, the states of active particles in plasma depending on the positions are diagnosed to investigate their relations with the morphology of VGs.

Review of Vertical Graphene and its Applications

Vertical graphene (VG) is a thin-film complex material featuring hierarchical microstructures: graphene-containing carbon nanosheets growing vertically on its deposition substrate, few-layer graphene basal layers, and chemically active atomistic defect sites and edges. Thanks to the fundamental characteristics of graphene materials, e.g. excellent electrical conductivity, thermal conductivity, chemical stability, and large specific surface area, VG materials have been successfully implemented into various niche applications which are strongly associated with their unique morphology. The microstructure of VG materials can be tuned by modifying growth methods and the parameters of growth processes. Multiple growth processes have been developed to address faster, safer, and mass production methods of VG materials, as well as accommodating various applications. VG's successful applications include field emission, supercapacitors, fuel cells, batteries, gas sensors, biochemical sensors, electrochemical analysis, strain sensors, wearable electronics, photo trapping, terahertz emission, etc. Research topics on VG have been more diversified in recent years, indicating extensive attention from the research community and great commercial value. In this review article, VG's morphology is briefly reviewed, and then various growth processes are discussed from the perspective of plasma science. After that, the most recent progress in its applications and related sciences and technologies are discussed.

Wetting characteristics of vertically aligned graphene nanosheets

Vertically aligned graphene nanosheets (VAGNs) are a class of graphitic carbon in which few layers of graphene nanosheets are aligned perpendicular to the plane of the substrate. The change in water contact angle (from 103° to 135°) with VAGNs, as a function of change in the surface geometry, is analysed. Theoretical calculations and comparison with the experimental data shows that the apparent contact angle values of VAGNs are closer to that of the fully non-wetting mode or ideal Cassie mode of wetting. The ideal Cassie mode of wetting also explains the variation of the water contact angle of VAGNs with the surface morphology of the material and predicts how surface parameters can be modified to get the required wettability for a certain application of this material.

Process-specific mechanisms of vertically oriented graphene growth in plasmas

Applications of plasma-produced vertically oriented graphene nanosheets (VGNs) rely on their unique structure and morphology, which can be tuned by the process parameters to understand the growth mechanism. Here, we report on the effect of the key process parameters such as deposition temperature, discharge power and distance from plasma source to substrate on the catalyst-free growth of VGNs in microwave plasmas. A direct evidence for the initiation of vertical growth through nanoscale graphitic islands is obtained from the temperature-dependent growth rates where the activation energy is found to be as low as 0.57 eV. It is shown that the growth rate and the structural quality of the films could be enhanced by (a) increasing the substrate temperature, (b) decreasing the distance between the microwave plasma source and the substrate, and (c) increasing the discharge power. The correlation between the wetting characteristics, morphology and structural quality is established. It is also demonstrated that morphology, crystallinity, wettability and sheet resistance of the VGNs can be varied while maintaining the same sp³ content in the film. The effects of the substrate temperature and the electric field in vertical alignment of the graphene sheets are reported. These findings help to develop and optimize the process conditions to produce VGNs tailored for applications including sensing, field emission, catalysis and energy storage.