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Hu Y, Zeng F, Chang C, Dong W, Li X, Pan F, Li G. Diverse Synaptic Plasticity Induced by the Interplay of Ionic Polarization and Doping at Salt-Doped Electrolyte/Semiconducting Polymer Interface. ACS OMEGA 2017; 2:746-754. [PMID: 30023614 PMCID: PMC6044774 DOI: 10.1021/acsomega.6b00392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2016] [Accepted: 02/14/2017] [Indexed: 06/08/2023]
Abstract
Pt/Ca2+-polyethylene oxide/polymer poly[3-hexylthiophene-2,5-diyl]/Pt devices were fabricated, and their pulse responses were studied. The discharging peak, represented by the postsynaptic current (PSC), first increases and then decreases with increasing input number in a pulse train. The weight of the PSC decreased for low-frequency stimulations but increased for high-frequency stimulations. However, the peak of the negative differential resistance during the charging process varied following the opposite trend. These behaviors suggested the ability for transferring the signal bidirectionally, confirming the equivalence between the ionic kinetics of our device and the transmitter kinetics of one kind of synapse. A facilitation (F)-depression (D) interplay model corresponding to the ionic polarization and doping interplay at the electrolyte/semiconducting polymer interface was adopted to successfully mimic the weight modification of the PSC. The simulation results showed that the observed synaptic plasticity was caused by the great disparity between the recovery time constants of F and D (τ F and τ D ). Moreover, such an interplay could inspire the features of responses to post-tetanic stimulations. Our study suggested a means to realize synaptic computation.
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Affiliation(s)
- Yuandong Hu
- Laboratory
of Advanced Materials (MOE), School of Materials Science
and Engineering, and Center for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People’s
Republic of China
| | - Fei Zeng
- Laboratory
of Advanced Materials (MOE), School of Materials Science
and Engineering, and Center for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People’s
Republic of China
- Key
Laboratory of Microelectronic Devices & Integrated Technology,
Institute of Microelectronics, Chinese Academy
of Sciences, Beijing 100029, People’s Republic of China
| | - Chiating Chang
- Laboratory
of Advanced Materials (MOE), School of Materials Science
and Engineering, and Center for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People’s
Republic of China
| | - Wenshuai Dong
- Laboratory
of Advanced Materials (MOE), School of Materials Science
and Engineering, and Center for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People’s
Republic of China
| | - Xiaojun Li
- Laboratory
of Advanced Materials (MOE), School of Materials Science
and Engineering, and Center for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People’s
Republic of China
| | - Feng Pan
- Laboratory
of Advanced Materials (MOE), School of Materials Science
and Engineering, and Center for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People’s
Republic of China
| | - Guoqi Li
- Laboratory
of Advanced Materials (MOE), School of Materials Science
and Engineering, and Center for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People’s
Republic of China
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Chang CT, Zeng F, Li JX, Dong WS, Hu YD, Li GQ. Spatial summation of the short-term plasticity of a pair of organic heterogeneous junctions. RSC Adv 2017. [DOI: 10.1039/c6ra27406d] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023] Open
Abstract
Short-term plasticity of a pair of organic heterogeneous junctions could be linearly summed from those of the two sources.
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Affiliation(s)
- C. T. Chang
- Key Laboratory of Advanced Materials (MOE)
- School of Materials Science and Engineering
- Tsinghua University
- Beijing
- China
| | - F. Zeng
- Key Laboratory of Advanced Materials (MOE)
- School of Materials Science and Engineering
- Tsinghua University
- Beijing
- China
| | - J. X. Li
- Key Laboratory of Advanced Materials (MOE)
- School of Materials Science and Engineering
- Tsinghua University
- Beijing
- China
| | - W. S. Dong
- Key Laboratory of Advanced Materials (MOE)
- School of Materials Science and Engineering
- Tsinghua University
- Beijing
- China
| | - Y. D. Hu
- Key Laboratory of Advanced Materials (MOE)
- School of Materials Science and Engineering
- Tsinghua University
- Beijing
- China
| | - G. Q. Li
- Center for Brain Inspired Computing Research (CBICR)
- Tsinghua University
- Beijing 100084
- People's Republic of China
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