Self-Powered Photodetector Based on Ag/CH3NH3PbI3/C Asymmetric Dual-Terminal Device

CH3NH3PbI3 is capable of exhibiting a superior photoresponse to visible light, but its self-powered devices are typically formed through p-n junctions. In this study, we fabricated a Ag/CH3NH3PbI3/C dual-terminal asymmetric electrode device using a single CH3NH3PbI3 perovskite micro/nanowire, enabling both the photoresponse and self-powered characteristics of CH3NH3PbI3 to visible light. Compared with traditional p-n junction devices, this simple device demonstrates enhanced interface photovoltaic effects by optimizing the combination of the Ag electrode with CH3NH3PbI3, resulting in superior self-powered characteristics. Under low bias voltage, the device achieves a significant on/off ratio of 103, with superior sensitivity and responsivity as well as a maximum rectification ratio of about 12. The photogenerated voltage and current reach approximately 0.8 V and 2 nA, respectively. This simple, compact, and self-powered asymmetric device exhibits great potential for applications in self-powered optoelectronics and wearable devices. This research provides a promising approach for recognizing and utilizing surface state effects in single nanoscale structures.

Modeling Monte Carlo simulation on photon regeneration effects of perovskite FAPbI3 for photovoltaic applications

Controlling the photon regeneration effects in FAPbI₃ films is a noteworthy approach to improve the photovoltaic (PV) efficiency of FAPbI₃-based solar cells. However, the lack of systematic study on the relationship between photon regeneration effects and PV efficiency in the experimental process makes it difficult to control the photon regeneration effects effectively. In this work, we combine the Monte Carlo sampling method and the polar coordinate calculation method to design a new algorithm for a detailed simulation of the main processes of photon regeneration effects affecting the PV efficiency in a model based on an n-i-p type FAPbI₃ perovskite solar cell (PSC). The algorithm is validated to be used to compare the power-conversion efficiency (PCE) of different PSCs to filter out the PSC structure with the highest PCE or to determine the range of material parameter values corresponding to the highest PCE. This work opens up new ideas to effectively control the photon regeneration effects in PSCs to improve the device PV efficiency.

Direct Visualization of UV-Light on Polymer Composite Films Consisting of Light Emitting Organic Micro Rods and Polydimethylsiloxane

We experimentally demonstrate the direct visualization of ultraviolet (UV) light using flexible polymer composite films consisting of crystalline organic tris-(8-hydroxyquinoline) aluminum (Alq3) micro-rods and polydimethylsiloxane (PDMS). The representative organic mono-molecule Alq3, which is a core material of organic light-emitting diodes, was used to detect light in the invisible UV region and visualize photoluminescence (PL). Alq3 shows absorption in the UV region and light-emitting characteristics in the green region, making it an optimal material for UV visualization because of its large Stokes transition. Crystalline Alq3 micro-rods were fabricated in a deionized water solution through a sequential process of reprecipitation and self-assembly. Highly bright photoluminescence was observed on the highly crystalline Alq3 micro-rods under UV light excitation, indicating that the crystalline structures of Alq3 molecules affect the visible emission decay of excitons. The Alq3 micro-rods were manufactured as flexible polymer composite films using a PDMS solution to observe UV photodetector characteristics according to UV intensity, and it was confirmed that the intensity of the fine UV light reaching the earth’s surface can be visualized by making use of this UV photodetector.

A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

Broadband photodetection (PD) covering the deep ultraviolet to near-infrared (200-1000 nm) range is significant and desirable for various optoelectronic designs. Herein, we employ ultraviolet (UV) luminescent concentrators (LC), iodine-based perovskite quantum dots (PQDs), and organic bulk heterojunction (BHJ) as the UV, visible, and near-infrared (NIR) photosensitive layers, respectively, to construct a broadband heterojunction PD. Firstly, experimental and theoretical results reveal that optoelectronic properties and stability of CsPbI₃ PQDs are significantly improved through Er³⁺ doping, owing to the reduced defect density, improved charge mobility, increased formation energy, tolerance factor, etc. The narrow bandgap of CsPbI₃:Er³⁺ PQDs serves as a visible photosensitive layer of PD. Secondly, considering the matchable energy bandgap, the BHJ (BTP-4Cl: PBDB-TF) is selected as to NIR absorption layer to fabricate the hybrid structure with CsPbI₃:Er³⁺ PQDs. Thirdly, UV LC converts the UV light (200-400 nm) to visible light (400-700 nm), which is further absorbed by CsPbI₃:Er³⁺ PQDs. In contrast with other perovskites PDs and commercial Si PDs, our PD presents a relatively wide response range and high detectivity especially in UV and NIR regions (two orders of magnitude increase that of commercial Si PDs). Furthermore, the PD also demonstrates significantly enhanced air- and UV- stability, and the photocurrent of the device maintains 81.5% of the original one after 5000 cycles. This work highlights a new attempt for designing broadband PDs, which has application potential in optoelectronic devices.

Enhancing the photodetection performance of MAPbI3 perovskite photodetectors by a dual functional interfacial layer for color imaging

The color imaging capacity of recently developed perovskite photodetectors (PDs) has not been fully explored. In this Letter, we fabricate a CH₃NH₃PbI₃ (MAPbI₃) PD as a color imaging sensor mainly due to its almost flat spectral response in a full visible light region. To enhance the photodetection performance, we introduce a dual functional interfacial TiO₂ layer by atomic layer deposition, reducing the dark current to 12 pA from 13 nA and improving the photocurrent to 1.87 µA from 20 nA, resulting in a ∼10⁵ fold enhancement of the ON/OFF ratio. Since we obtained satisfactory color images, we believe that the MAPbI₃ perovskite PD is an ideal photosensitive device for color imaging.

Double-side operable perovskite photodetector using Cu/Cu2O as a hole transport layer

In this study, a perovskite is integrated with an ultra-thin Cu/Cu₂O (CCO) composite film, a transparent material with high mobility, to achieve a double-side and low-voltage operable photodetector. Compared to photodetectors that utilize metal electrode with perovskite, the use of CCO significantly enhances the photocurrent (from nA up to mA). It acts as a large-scale hole transport layer. The photodetector exhibits high responsivities of 6.79 AW^-1 [illuminated via the fluorine-doped tin oxide (FTO) side] and 10.23 AW^-1 (illuminated via CCO side). The detectivities obtained at both illuminated sides are as high as over 10¹¹ Jones. Additionally, the Cu/Cu₂O-covered perovskite effectively prevents the reaction of perovskite in the interface. This work reveals that the perovskite/CCO heterojunction photodetector can be considered a promising candidate for applications in bifacial-illuminated and flexible/wearable optoelectronic technologies.

Silicon/Perovskite Core-Shell Heterojunctions with Light-Trapping Effect for Sensitive Self-Driven Near-Infrared Photodetectors

In this article, we fabricated a sensitive near-infrared (NIR) light detector by directly coating a layer of Cs-doped FAPbI₃ perovskite film onto vertical Si nanowire (SiNW) array. The as-assembled SiNW array/perovskite core-shell heterojunction exhibits a typical rectifying characteristic in darkness and distinct photoresponse characteristics under light illumination. Owning to the remarkable photovoltaic effect, the heterojunction can work as a self-driven NIR detector without an exterior energy supply. Further photoresponse investigation reveals that the photodetector is sensitive in a wide wavelength range with maximum sensitivity at ∼850 nm. The responsivity ( R) and specific detectivity ( D*) are estimated to be 14.86 mA W^-1 and 2.04 × 10¹⁰ Jones at 0 V bias, respectively, which can be improved to 844.33 mA W^-1 and 3.2 × 10¹¹ Jones at a bias voltage of -0.9 V. In addition, the present device also possesses distinct advantages of a large I_light/ I_dark ratio exceeding 10⁴, swift response rate with rise/decay times of 4/8 μs, and relatively good ambient stability. According to our numerical simulation based on finite element method, the superior device performance is associated with strong light-trapping effect in such unique core-shell heterojunction array.

Self-Powered All-Inorganic Perovskite Microcrystal Photodetectors with High Detectivity

Organic-inorganic lead halide perovskite microcrystal (MC) films are attractive candidates for fabricating high-performance large-area self-powered photodetectors (PDs) because of their lower trap state density and higher carrier mobility than their polycrystalline counterparts and more suitability of synthesizing large lateral area films than their single-crystal counterparts. Here, we report on the fabrication of self-powered all-inorganic CsPbBr₃ perovskite MC PDs with high detectivity, using a modified solution synthesis method. The MCs are up to about 10 μm in size, and the MC layer is also about 11 μm in thickness. Under 473 nm laser (100 mW) illumination, the CsPbBr₃ MC PDs show responsivity values of up to 0.172 A W^-1, detectivity values of up to 4.8 × 10¹² Jones, on/off ratios of up to 1.3 × 10⁵, and linear dynamic ranges of up to 113 dB. These performances are significantly better than those of PDs based on polycrystalline perovskite thin films and comparable with those of PDs based on perovskite single crystals.

Perovskite-based photodetectors: materials and devices

While the field of perovskite-based optoelectronics has mostly been dominated by photovoltaics, light-emitting diodes, and transistors, semiconducting properties peculiar to perovskites make them interesting candidates for innovative and disruptive applications in light signal detection. Perovskites combine effective light absorption in the broadband range with good photo-generation yield and high charge carrier mobility, a combination that provides promising potential for exploiting sensitive and fast photodetectors that are targeted for image sensing, optical communication, environmental monitoring or chemical/biological detection. Currently, organic-inorganic hybrid and all-inorganic halide perovskites with controlled morphologies of polycrystalline thin films, nano-particles/wires/sheets, and bulk single crystals have shown key figure-of-merit features in terms of their responsivity, detectivity, noise equivalent power, linear dynamic range, and response speed. The sensing region has been covered from ultraviolet-visible-near infrared (UV-Vis-NIR) to gamma photons based on two- or three-terminal device architectures. Diverse photoactive materials and devices with superior optoelectronic performances have stimulated attention from researchers in multidisciplinary areas. In this review, we provide a comprehensive overview of the recent progress of perovskite-based photodetectors focusing on versatile compositions, structures, and morphologies of constituent materials, and diverse device architectures toward the superior performance metrics. Combining the advantages of both organic semiconductors (facile solution processability) and inorganic semiconductors (high charge carrier mobility), perovskites are expected to replace commercial silicon for future photodetection applications.

Hybrid Organic-Inorganic Perovskite Photodetectors

Hybrid organic-inorganic perovskite materials garner enormous attention for a wide range of optoelectronic devices. Due to their attractive optical and electrical properties including high optical absorption coefficient, high carrier mobility, and long carrier diffusion length, perovskites have opened up a great opportunity for high performance photodetectors. This review aims to give a comprehensive summary of the significant results on perovskite-based photodetectors, focusing on the relationship among the perovskite structures, device configurations, and photodetecting performances. An introduction of recent progress in various perovskite structure-based photodetectors is provided. The emphasis is placed on the correlation between the perovskite structure and the device performance. Next, recent developments of bandgap-tunable perovskite and hybrid photodetectors built from perovskite heterostructures are highlighted. Then, effective approaches to enhance the stability of perovskite photodetector are presented, followed by the introduction of flexible and self-powered perovskite photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. A comprehensive summary of the research status on perovskite photodetectors is hoped to push forward the development of this field.

Self-powered UV-visible photodetector with fast response and high photosensitivity employing an Fe:TiO2/n-Si heterojunction

An ultrasensitive, fast response and self-powered photodetector would be preferable in practical applications.

A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed

Realization of Ag/ZnMgO/ZnO photodetectors provides a feasible route to develop self-powered solar-blind UV photodetectors with fast response speed.

Photodynamic response of a solution-processed organolead halide photodetector

CH₃NH₃PbI₃ perovskite semiconductors have received intensive attention as a light absorbing material in high performance solar cells and photodetectors.