Selective deposition of gold particles onto silicon at the nanoscale controlled by a femtosecond laser through galvanic displacement

Control of the deposition location and morphology of metals on semiconductors is of considerable importance for the fabrication of metal–semiconductor hybrid structures. For this purpose, selective nanoscale deposition of gold on silicon was successfully achieved by a two-step method in this paper. The first preparation step comprises the fabrication of ripples with a femtosecond laser. The second preparation step is to immerse the samples in a mixed aqueous solution of hydrofluoric acid (HF) and chloroauric acid (HAuCl₄). The periodically ablated ripple structures on silicon surfaces fabricated by the femtosecond laser changed the physical and chemical properties of silicon and then controlled the nucleation positions of gold nanoparticles. Gold particles tend to grow in raised positions of the ripples and no substantial growth was observed in the recesses of the ablated ripple structures. Similar phenomena were observed on the modified ripple structures; this led to the formation of periodically distributed gold sub-micron wires. Above all, this paper proposes a new mask-free method of selective metal electroless deposition that can be realized without complicated experimental equipment and tedious experimental operations.

Control of the deposition location and morphology of metals on semiconductors is of considerable importance for the fabrication of metal–semiconductor hybrid structures.

Evaluation of 3D gold nanodendrite layers obtained by templated galvanic displacement reactions for SERS sensing and heterogeneous catalysis

Dense layers of overlapping three-dimensional (3D) gold nanodendrites characterized by high specific surfaces as well as by abundance of sharp edges and vertices creating high densities of SERS hotspots are promising substrates for SERS-based sensing and catalysis. We have evaluated to what extent structural features of 3D gold nanodendrite layers can be optimized by the initiation of 3D gold nanodendrite growth at gold particles rationally positioned on silicon wafers. For this purpose, galvanic displacement reactions yielding 3D gold nanodendrites were guided by hexagonal arrays of parent gold particles with a lattice constant of 1.5 μm obtained by solid-state dewetting of gold on topographically patterned silicon wafers. Initiation of the growth of dendritic features at the edges of the gold particles resulted in the formation of 3D gold nanodendrites while limitation of dendritic growth to the substrate plane was prevented. The regular arrangement of the parent gold particles supported the formation of dense layers of overlapping 3D gold nanodendrites that were sufficiently homogeneous within the resolution limits of Raman microscopy. Consequently, SERS mapping experiments revealed a reasonable degree of uniformity. The proposed preparation algorithm comprises only bottom-up process steps that can be carried out without the use of costly instrumentation.

Influence of hydrofluoric acid treatment on electroless deposition of Au clusters

The morphology of gold nanoparticles (AuNPs) deposited on a (100) silicon wafer by simple immersion in a solution containing a metal salt and hydrofluoric acid (HF) is altered by HF treatment both before and after deposition. The gold clusters are characterized by the presence of flat regions and quasispherical particles consistent with the layer-by-layer or island growth modes, respectively. The cleaning procedure, including HF immersion prior to deposition, affects the predominantly occurring gold structures. Flat regions, which are of a few tens of nanometers long, are present after immersion for 10 s. The three-dimensional (3D) clusters are formed after a cleaning procedure of 4 min, which results in a large amount of spherical particles with a diameter of ≈15 nm and in a small percentage of residual square layers of a few nanometers in length. The samples were also treated with HF after the deposition and we found out a general thickening of flat regions, as revealed by TEM and AFM analysis. This result is in contrast to the coalescence observed in similar experiments performed with Ag. It is suggested that the HF dissolves the silicon oxide layer formed on top of the thin flat clusters and promotes the partial atomic rearrangement of the layered gold atoms, driven by a reduction of the surface energy. The X-ray diffraction investigation indicated changes in the crystalline orientation of the flat regions, which partially lose their initially heteroepitaxial relationship with the substrate. A postdeposition HF treatment for almost 70 s has nearly the same effect of long duration, high temperature annealing. The process presented herein could be beneficial to change the spectral response of nanoparticle arrays and to improve the conversion efficiency of hybrid photovoltaic devices.