1
|
He M, Wang N, Long X, Zhang C, Ma C, Zhong Q, Wang A, Wang Y, Pervaiz A, Shan J. Antimony speciation in the environment: Recent advances in understanding the biogeochemical processes and ecological effects. J Environ Sci (China) 2019; 75:14-39. [PMID: 30473279 DOI: 10.1016/j.jes.2018.05.023] [Citation(s) in RCA: 232] [Impact Index Per Article: 38.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2018] [Revised: 05/24/2018] [Accepted: 05/28/2018] [Indexed: 05/14/2023]
Abstract
Antimony (Sb) is a toxic metalloid, and its pollution has become a global environmental problem as a result of its extensive use and corresponding Sb-mining activities. The toxicity and mobility of Sb strongly depend on its chemical speciation. In this review, we summarize the current knowledge on the biogeochemical processes (including emission, distribution, speciation, redox, metabolism and toxicity) that trigger the mobilization and transformation of Sb from pollution sources to the surrounding environment. Natural phenomena such as weathering, biological activity and volcanic activity, together with anthropogenic inputs, are responsible for the emission of Sb into the environment. Sb emitted in the environment can adsorb and undergo redox reactions on organic or inorganic environmental media, thus changing its existing form and exerting toxic effects on the ecosystem. This review is based on a careful and systematic collection of the latest papers during 2010-2017 and our research results, and it illustrates the fate and ecological effects of Sb in the environment.
Collapse
Affiliation(s)
- Mengchang He
- State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875, China.
| | - Ningning Wang
- State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875, China
| | - Xiaojing Long
- State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875, China
| | - Chengjun Zhang
- State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875, China
| | - Congli Ma
- State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875, China
| | - Qianyun Zhong
- State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875, China
| | - Aihua Wang
- State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875, China
| | - Ying Wang
- State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875, China
| | - Aneesa Pervaiz
- State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875, China
| | - Jun Shan
- State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875, China
| |
Collapse
|
2
|
Yitzchaik S, Gutierrez R, Cuniberti G, Yerushalmi R. Diversification of Device Platforms by Molecular Layers: Hybrid Sensing Platforms, Monolayer Doping, and Modeling. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2018; 34:14103-14123. [PMID: 30253096 DOI: 10.1021/acs.langmuir.8b02369] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Inorganic materials such as semiconductors, oxides, and metals are ubiquitous in a wide range of device technologies owing to the outstanding robustness and mature processing technologies available for such materials. However, while the important contribution of inorganic materials to the advancement of device technologies has been well established for decades, organic-inorganic hybrid device systems, which merge molecular functionalities with inorganic platforms, represent a newer domain that is rapidly evolving at an increasing pace. Such devices benefit from the great versatility and flexibility of the organic building blocks merged with the robustness of the inorganic platforms. Given the overwhelming wealth of literature covering various approaches for modifying and using inorganic devices, this feature article selectively highlights some of the advances made in the context of the diversification of devices by surface chemistry. Particular attention is given to oxide-semiconductor systems and metallic surfaces modified with organic monolayers. The inorganic device components, such as semiconductors, metals, and oxides, are modified by organic monolayers, which may serve as either active, static, or sacrificial components. We portray research directions within the broader field of organic-inorganic hybrid device systems that can be viewed as specific examples of the potential of such hybrid device systems given their comprehensive capabilities of design and diversification. Monolayer doping techniques where sacrificial organic monolayers are introduced into semiconducting elements are reviewed as a specific case, together with associated requirements for nanosystems, devices, and sensors for controlling doping levels and doping profiles on the nanometric scale. Another series of examples of the flexibility provided by the marriage of organic functional monolayers and inorganic device components are represented by a new class of biosensors, where the organic layer functionality is exploited in a functioning device for sensing. Considerations for relying on oxide-terminated semiconductors rather than the pristine semiconductor material as a platform both for processing and sensing are discussed. Finally, we cover aspects related to the use of various theoretical and computational approaches to model organic-inorganic systems. The main objectives of the topics covered here are (i) to present the advances made in each respective domain and (ii) to provide a comprehensive view of the potential uses of organic monolayers and self-assembly processes in the rapidly evolving field of molecular-inorganic hybrid device platforms and processing methodologies. The directions highlighted here provide a perspective on a future, not yet fully realized, integrated approach where organic monolayers are combined with inorganic platforms in order to obtain versatile, robust, and flexible systems with enhanced capabilities.
Collapse
Affiliation(s)
- Shlomo Yitzchaik
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology , The Hebrew University of Jerusalem , Edmond J. Safra Campus , Givat Ram Jerusalem , 91904 Israel
| | | | | | - Roie Yerushalmi
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology , The Hebrew University of Jerusalem , Edmond J. Safra Campus , Givat Ram Jerusalem , 91904 Israel
| |
Collapse
|
3
|
Chen G, Huang X, Zhang Y, Sun M, Shen J, Huang R, Tong M, Long Z, Wang X. Constructing POSS and viologen-linked porous cationic frameworks induced by the Zincke reaction for efficient CO2 capture and conversion. Chem Commun (Camb) 2018; 54:12174-12177. [DOI: 10.1039/c8cc06972g] [Citation(s) in RCA: 36] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
POSS and viologen-linked porous cationic frameworks were constructed via the Zincke reaction towards efficient CO2 capture and conversion under ambient conditions.
Collapse
Affiliation(s)
- Guojian Chen
- School of Chemistry and Materials Science
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials
- Jiangsu Normal University
- Xuzhou 221116
- China
| | - Xiaohui Huang
- School of Chemistry and Materials Science
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials
- Jiangsu Normal University
- Xuzhou 221116
- China
| | - Yadong Zhang
- School of Chemistry and Materials Science
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials
- Jiangsu Normal University
- Xuzhou 221116
- China
| | - Mengyao Sun
- School of Chemistry and Materials Science
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials
- Jiangsu Normal University
- Xuzhou 221116
- China
| | - Jie Shen
- School of Chemistry and Materials Science
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials
- Jiangsu Normal University
- Xuzhou 221116
- China
| | - Rui Huang
- School of Chemistry and Materials Science
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials
- Jiangsu Normal University
- Xuzhou 221116
- China
| | - Minman Tong
- School of Chemistry and Materials Science
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials
- Jiangsu Normal University
- Xuzhou 221116
- China
| | - Zhouyang Long
- School of Chemistry and Materials Science
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials
- Jiangsu Normal University
- Xuzhou 221116
- China
| | - Xiaochen Wang
- Department of Chemistry and Materials Engineering
- Hefei University
- Hefei 230022
- China
| |
Collapse
|
4
|
Alphazan T, Díaz Álvarez A, Martin F, Grampeix H, Enyedi V, Martinez E, Rochat N, Veillerot M, Dewitte M, Nys JP, Berthe M, Stiévenard D, Thieuleux C, Grandidier B. Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping. ACS APPLIED MATERIALS & INTERFACES 2017; 9:20179-20187. [PMID: 28534397 DOI: 10.1021/acsami.7b02645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO2 overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 1020 cm-3. Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.
Collapse
Affiliation(s)
- Thibault Alphazan
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
- C2P2, CPE Lyon , 43 Bd du 11 Nov. 1918, 69616 Villeurbanne cedex, France
| | - Adrian Díaz Álvarez
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| | - François Martin
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Helen Grampeix
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Virginie Enyedi
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Eugénie Martinez
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Névine Rochat
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Marc Veillerot
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Marc Dewitte
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| | - Jean-Philippe Nys
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| | - Maxime Berthe
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| | - Didier Stiévenard
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| | - Chloé Thieuleux
- C2P2, CPE Lyon , 43 Bd du 11 Nov. 1918, 69616 Villeurbanne cedex, France
| | - Bruno Grandidier
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| |
Collapse
|