Continuous Single-Crystalline GaN Film Grown on WS2 -Glass Wafer

Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single-crystalline GaN film on WS₂ -glass wafer is successfully performed by using the strong polarity of WS₂ buffer layer and its perfectly matching lattice geometry with GaN. Furthermore, this study reveals that the first interfacial nitrogen layer plays a crucial role in the well-constructed interface by sharing electrons with both Ga and S atoms, enabling the single-crystalline stress-free GaN, as well as a violet light-emitting diode. This study paves a way for the heterogeneous integration of semiconductors and creates opportunities to break through the design and performance limitations, which are induced by substrate restriction, of the devices.

Selective olefin production on silica based iron catalysts in Fischer–Tropsch synthesis

Mixed phases of Fe3O4 and Fe5C2, interacting properly with SiO2, produce highly selective olefins from syngas.

Cobalt-Based Fischer–Tropsch Synthesis: A Kinetic Evaluation of Metal–Support Interactions Using an Inverse Model System

Metal–support interactions in the cobalt–alumina system are evaluated using an inverse model system generated by impregnating Co3O4 with a solution of aluminum sec-butoxide in n-hexane. This results in the formation of nano-sized alumina islands on the surface of cobalt oxide. The activated model systems were kinetically evaluated for their activity and selectivity in the Fischer–Tropsch synthesis under industrially relevant conditions (220 °C, 20 bar). The kinetic measurements were complemented by H2-chemisorption, CO-TPR, and pyridine TPD. It is shown that the introduction of aluminum in the model system results in the formation of strong acid sites and enhanced CO dissociation, as evidenced in the CO-TPR. The incorporation of aluminum in the model systems led to a strong increase in the activity factor per surface atom of cobalt in the rate expression proposed by Botes et al. (2009). However, the addition of aluminum also resulted in a strong increase in the kinetic inhibition factor. This is accompanied by a strong decrease in the methane selectivity, and an increase in the desired C5+ selectivity. The observed activity and selectivity changes are attributed to the increase in the coverage of the surface with carbon with increasing aluminum content, due to the facilitation of CO dissociation in the presence of Lewis acid sites associated with the alumina islands on the catalytically active material.