Acute mechano-electronic responses in twisted phosphorene nanoribbons

Spintronic performance of bent zigzag phosphorene nanoribbons: effects of mechanical deformation and gate voltage

This study explores the spintronic properties of an innovative device incorporating in-plane bent zigzag phosphorene nanoribbons (ZPNRs). The device features ZPNRs with a channel length of 23.4 nm, bent into circular arcs with varying curvatures. We investigate the impact of mechanical deformation and gate voltage on the spin-dependent properties, including the density of states, transmission coefficients, and spin Seebeck coefficient (SSC). Our results demonstrate that the device exhibits a spin-semiconducting phase with tunable spin-splitting characteristics and spin-dependent transport properties, both of which are influenced by the curvature. An increase in the bending parameter markedly enhances spin splitting, leading to the SSC attaining values as high as 1.35 mV K-1. Moreover, the application of gate voltage further enhances both spin polarization and spin current. The significant impact of mechanical deformation and gate voltage on spintronic performance showcases the potential of bent ZPNRs for advanced applications.

Band engineering of Dirac materials in SbmBin lateral heterostructures

Band engineering the electronic structures of Sb_mBi_n lateral heterostructures (LHS) from antimonene and bismuthene is systematically investigated using first principles calculations. The spin–orbit coupling is found to be crucial in determining electronic structures of Sb_mBi_n LHS. The results indicate that these lateral heterostructures have a type-II band alignment which can be easily tuned using their size and tensile strain. The band gap tends to zero when the lateral heterostructure size is larger than a critical value, which intrinsically corresponds to a semiconductor-to-semimetal transition. The band inversion near the Γ point occurs under suitable tensile strain, indicating that Sb_mBi_n LHS are very promising to realize quantum spin Hall effects.

Band engineering the electronic structures of Sb_mBi_n lateral heterostructures (LHS) from antimonene and bismuthene is systematically investigated using first principles calculations.

Assembling phosphorene flexagons for 2D electron-density-guided nanopatterning and nanofabrication

To build upon the rich structural diversity in the ever-increasing polymorphic phases of two-dimensional phosphorene, we propose different assembly methods (namely, the "bottom-up" and "top-down" approaches) that involve four commonly reported parent phases (i.e. the α-, β-, γ-, and δ-phosphorene) in combination with the lately reported remarkably low-energy one-dimensional defects in α-phosphorene. In doing so, we generate various periodically repeated phosphorene patterns in these so-called phosphorene flexagons and present their local electron density (via simulated scanning tunneling microscopy (STM) images). These interesting electron density patterns seen in the flexagons (mimicking symmetry patterns that one may typically see in a kaleidoscope) may assist as potential 2D templates where electron-density-guided nanopatterning and nanofabrication in complex organized nanoarchitectures are important.