Enhancement of carrier lifetime by spin-orbit coupling in a topological insulator of an Sb2Te3 thin film

Enhanced Photocharacteristics by Fermi Level Modulating in Sb2 Te3 /Bi2 Se3 Topological Insulator p-n Junction

Topological insulators have recently received attention in optoelectronic devices because of their high mobility and broadband absorption resulting from their topological surface states. In particular, theoretical and experimental studies have emerged that can improve the spin generation efficiency in a topological insulator-based p-n junction structure called a TPNJ, drawing attention in optospintronics. Recently, research on implementing the TPNJ structure is conducted; however, studies on the device characteristics of the TPNJ structure are still insufficient. In this study, the TPNJ structure is effectively implemented without intermixing by controlling the annealing temperature, and the photocharacteristics appearing in the TPNJ structure are investigated using a cross-pattern that can compare the characteristics in a single device. Enhanced photo characteristics are observed for the TPNJ structure. An optical pump Terahertz probe and a physical property measurement system are used to confirm the cause of improved photoresponsivity. Consequently, the photocharacteristics are improved owing to the change in the absorption mechanism and surface transport channel caused by the Fermi level shift in the TPNJ structure.

Highly Responsive Near-Infrared Si/Sb2Se3 Photodetector via Surface Engineering of Silicon

The development of imaging technology and optical communication demands a photodetector with high responsiveness. As demonstrated by microfabrication and nanofabrication technology advancements, recent progress in plasmonic sensor technologies can address this need. However, these photodetectors have low optical absorption and ineffective charge carrier transport efficiency. Sb₂Se₃ is light-sensitive material with a high absorption coefficient, making it suitable for photodetector applications. We developed an efficient, scalable, low-cost near-infrared (NIR) photodetector based on a nanostructured Sb₂Se₃ film deposited on p-type micropyramidal Si (made via the wet chemical etching process), working on photoconductive phenomena. Our results proved that, at the optimized thickness of the Sb₂Se₃ layer, the proposed Si micropyramidal substrate enhanced the responsivity nearly two times, compared with that of the Sb₂Se₃ deposited on a flat Si reference sample and a glass/Sb₂Se₃ sample at 1064 nm (power density = 15 mW/cm²). More interestingly, the micropyramidal silicon-based device worked at 0 V bias, paving a path for self-bias devices. The highest specific detectivity of 2.25 × 10¹⁵ Jones was achieved at 15 mW/cm² power density at a bias voltage of 0.5 V. It is demonstrated that the enhanced responsivity was closely linked with field enhancement due to the Kretschmann configuration of Si pyramids, which acts as hot spots for Si/Sb₂Se₃ junction. A high responsivity of 47.8 A W^-1 proved it suitable for scalable and cost-effective plasmonic-based NIR photodetectors.

Emerging 2D materials beyond graphene for ultrashort pulse generation in fiber lasers

Ultrafast fiber lasers have significant applications in ultra-precision manufacturing, medical diagnostics, medical treatment, precision measurement and astronomical detection, owing to their ultra-short pulse width and ultra-high peak-power. Since graphene was first explored as an optical saturable absorber for passively mode-locked lasers in 2009, many other 2D materials beyond graphene, including phosphorene, antimonene, bismuthene, transition metal dichalcogenides (TMDs), topological insulators (TIs), metal-organic frameworks (MOFs) and MXenes, have been successively explored, resulting in rapid development of novel 2D materials-based saturable absorbers. Herein, we review the latest progress of the emerging 2D materials beyond graphene for passively mode-locked fiber laser application. These 2D materials are classified into mono-elemental, dual-elemental and multi-elemental 2D materials. The atomic structure, band structure, nonlinear optical properties, and preparation methods of 2D materials are summarized. Diverse integration strategies for applying 2D materials into fiber laser systems are introduced, and the mode-locking performance of the 2D materials-based fiber lasers working at 1-3 μm are discussed. Finally, the perspectives and challenges facing 2D materials-based mode-locked fiber lasers are highlighted.

Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3

The three-dimensional (3D) topological insulator (TI) Bi₂Se₃ exhibits topologically protected, linearly dispersing Dirac surface states (SSs). To access the intriguing properties of these SSs, it is important to distinguish them from the coexisting two-dimensional electron gas (2DEG) on the surface. Here, we use circularly polarized light to induce the inverse spin Hall effect in a Bi₂Se₃ thin film at different temperatures (i.e., from 77 to 300 K). It is demonstrated that the photoinduced inverse spin Hall effect (PISHE) of the top SSs and the 2DEG can be separated based on their opposite signs. The temperature and power dependence of the PISHE also confirms our method. Furthermore, it is found that the PISHE in the 2DEG is dominated by the extrinsic mechanism, as revealed by the temperature dependence of the PISHE.