The dissipation of field emitting carbon nanotubes in an oxygen environment as revealed by in situ transmission electron microscopy

Nanoscale vacuum channel transistor with in-plane collection structure

High quality nanoscale vacuum channel transistors (NVCTs) enable carriers to transport ballistically through the vacuum nanogap, achieving high speed and frequency characteristic which are essential for on-chip vacuum electronic devices. However, the studies to date have been largely confined to explore the common electrical performance, while the fast response characteristic of NVCTs remains a challenge. We report the fabrication of metal-based NVCT, with sub-100 nm vacuum channel and specific designed in-plane collection structure which can enhance the emission or collection efficiency of the electrons simultaneously. Importantly, the demonstration of a rise/fall time of less than 100 ns is achieved, which is compatible with those high-quality solid-state transistors based on low-dimensional materials. Moreover, the device can also retain excellent electrical performance, exhibiting a high drive current (>10 μA), low work voltage (<10 V) and high on/off current ratio (>10⁴). The verification of fast temporal response of NVCT makes a significant step towards on-chip vacuum electronics with high speed and integration.

Controlling the Electronic Properties of a Nanoporous Carbon Surface by Modifying the Pores with Alkali Metal Atoms

We investigate a process of controlling the electronic properties of a surface of nanoporous carbon glass-like thin films when the surface pores are filled with potassium atoms. The presence of impurities on the surface in the form of chemically adsorbed hydrogen and oxygen atoms, and also in the form of hydroxyl (OH) groups, is taken into account. It is found that even in the presence of impurities, the work function of a carbon nanoporous glass-like film can be reduced by several tenths of an electron volt when the nanopores are filled with potassium atoms. At the same time, almost all potassium atoms are ionized, losing one electron, which passes to the carbon framework of the film. This is due to the nanosizes of the pores in which the electron clouds of the potassium atom interact maximally with the electrons of the carbon framework. As a result, this leads to an improvement in the electrical conductivity and an increase in the electron density at the Fermi level. Thus, we conclude that an increase in the number of nanosized pores on the film surface makes it possible to effectively modify it, providing an effective control of the electronic structure and emission properties.

High-performance field emission based on nanostructured tin selenide for nanoscale vacuum transistors

Vacuum field effect transistors have been envisioned to hold the promise of replacing solid-state electronics when the ballistic transport of electrons in a nanoscale vacuum can enable significantly high switching speed and stability. However, it remains challenging to obtain high-performance and reliable field-emitter materials. In this work, we report a systematic study on the field emission of novel two-dimensional tin selenide (SnSe) with rational design of its structures and surface morphologies. SnSe in the form of atomically smooth single crystals and nanostructures (nanoflowers) is chemically synthesized and studied as field emitters with varying channel lengths from 6 μm to 100 nm. Our study shows that devices based on SnSe nanoflowers significantly improve the performance and enable field emission at a reduced voltage due to a surface-enhanced local electrostatic field, and further lead to nonlinear dependent channel scaling when the channel length is shorter than 600 nm. We measured a record-high short-channel field-enhancement factor of 50 600 for a 100 nm device. Moreover, we investigated the emission stability and measured the fluctuations of the emission current which are smaller than 5% for more than 20 hours. Our results demonstrated a high-performance and highly reliable field emitter based on 2D SnSe nanostructures and we developed an important building block for nanoscale vacuum field effect transistors.

Assessing and ameliorating the influence of the electron beam on carbon nanotube oxidation in environmental transmission electron microscopy

In this work, we examine how the imaging electron beam can induce damage in carbon nanotubes (CNTs) at varying oxygen gas pressures and electron dose rates using environmental transmission electron microscopy (ETEM). Our studies show that there is a threshold cumulative electron dose which brings about damage in CNTs in oxygen - through removal of their graphitic walls - which is dependent on O₂ pressure, with a 4-5 fold decrease in total electron dose per decade increase at a lower pressure range (10^-6 to 10^-5mbar) and approximately 1.3 -fold decrease per decade increase at a higher pressure range (10^-3 to 10⁰mbar). However, at a given pressure, damage in CNTs was found to occur even at the lowest dose rate utilized, suggesting the absence of a lower limit for the latter parameter. This study provides guidelines on the cumulative dose required to damage nanotubes in the 10^-7mbar to 10⁰mbar pressure regimes, and discusses the role of electron dose rate and total electron dose on beam-induced CNT degradation experiments.