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Du X, Qiu P, Chai J, Mao T, Hu P, Yang J, Sun YY, Shi X, Chen L. Doubled Thermoelectric Figure of Merit in p-Type β-FeSi 2 via Synergistically Optimizing Electrical and Thermal Transports. ACS APPLIED MATERIALS & INTERFACES 2020; 12:12901-12909. [PMID: 32096980 DOI: 10.1021/acsami.0c00321] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
β-FeSi2 has long been investigated as a promising thermoelectric (TE) material working at high temperatures due to its combining features of environmental friendliness, good thermal stability, and strong oxidation resistance. However, the real application of β-FeSi2 is still limited by its low TE figure of merit (zT). In this study, nearly doubled zT in p-type β-FeSi2 has been achieved via synergistically optimizing electrical and thermal transports. Based on the first-principles calculations, Al with shallow acceptor transition level and high carrier donation efficiency is chosen to dope β-FeSi2. Significantly improved electrical transport, particularly in the low temperature range, has been obtained in the Al-doped β-FeSi2 system. The power factor for FeSi1.96Al0.04 at 300 K is even higher than that of p-type β-FeSi2-based compounds reported previously at high temperatures. By alloying β-FeSi2 with Os at the Fe sites, we further lower the lattice thermal conductivity. Fe0.80Os0.20Si1.96Al0.04 possesses the lowest lattice thermal conductivity among the β-FeSi2 compounds prepared by the equilibrium method. Finally, a record-high zT value of 0.35 is obtained for p-type Fe0.80Os0.20Si1.96Al0.04. This study is expected to accelerate the application of β-FeSi2.
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Affiliation(s)
- Xiaolong Du
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Pengfei Qiu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Jun Chai
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tao Mao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ping Hu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiong Yang
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Yi-Yang Sun
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Xun Shi
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Lidong Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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