Cheon M, Cho Y, Park CH, Cho CR, Jeong SY. A study of the density of states of ZnCoO:H from resistivity measurements.
RSC Adv 2018;
8:9895-9900. [PMID:
35540802 PMCID:
PMC9078852 DOI:
10.1039/c7ra12866e]
[Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2017] [Accepted: 02/17/2018] [Indexed: 02/02/2023] Open
Abstract
Understanding the electronic band structure and density of states (DOS) of a material and their relationship to the associated electronic transport properties is the starting point for optimizing the performance of a device and its technological applications. In a hydrogenated Zn0.8Co0.2O (ZnCoO:H) film with an inverted thin-film transistor structure, we found ambipolar behavior, which is shown in many field-effect devices based on graphene, graphene nanoribbons, and organic semiconductors. In this study, to obtain information on the DOS of ZnCoO:H to explain the ambipolar behavior in terms of the carrier density and type, resistivity and magnetoresistance measurements of a ZnCoO:H film were performed at 5 K. Our proposed DOS representation of ZnCoO:H explains qualitatively the experimental observations of carrier density modulation and ambipolar behavior. First-principles calculations of the DOS of ZnCoO:H were in good agreement with the proposed DOS representation. Through a comparison of first-principles calculations and experimental data, evidence for the existence of Co–H–Co in ZnCoO:H is suggested.
Ambipolar behavior in a hydrogenated Zn0.8Co0.2O (ZnCoO:H) film is investigated via resistivity and magnetoresistance measurements and first-principles calculations of the DOS. Evidence for the existence of Co–H–Co in ZnCoO:H is suggested.![]()
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