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Ru F, Xia J, Li X, Liu P, Qiao P, Li Y, Cao J, Tian L, Zhang W, Meng XM. Epitaxial growth of structure-tunable ZnO/ZnS core/shell nanowire arrays using HfO 2 as the buffer layer. NANOSCALE 2022; 14:7579-7588. [PMID: 35506868 DOI: 10.1039/d2nr01560a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Synthesis of high-quality ZnO/ZnS heterostructures with tunable phase and controlled structures is in high demand due to their adjustable band gap and efficient electron-hole pair separation. In this report, for the first time, remote heteroepitaxy of single-crystalline ZnO/ZnS core/shell nanowire arrays has been realized using amorphous HfO2 as the buffer layer. Zinc blende or wurtzite ZnS epilayer can be efficiently fabricated under the same thermal deposition condition by adjusting the buffer layer thickness, even among the same batch of products, respectively. Structural characterization reveals "(01-10)ZnOwz//(2-20)ZnSZB, [0001]ZnOWZ//[001]ZnSZB" and "(01-10)ZnOWZ//(01-10)ZnSWZ, [0002]ZnOWZ//[0002]ZnSWZ" epitaxial relationships between the core and the shell, respectively. The cathodoluminescence measurement demonstrates that the tuning of the optical properties can be accomplished by preparing a heterostructure with HfO2, in which a strong green emission increases at the expense of the quenching of UV emission. In addition, the core/shell heterostructure based Schottky diode exhibits an asymmetrical rectifying behavior and an outstanding photo-electronic switching-effect. We believe that the aforementioned results could provide fundamental insights for epitaxial growth of structure-tunable ZnO/ZnS heterostructures on the nanoscale. Furthermore, this promising route buffered by the high-k material can broaden the options for fabricating heterojunctions and promote their application in photoelectric nanodevices.
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Affiliation(s)
- Fan Ru
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Jing Xia
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Xuanze Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Pei Liu
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Peiyu Qiao
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Yuye Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Jianyu Cao
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Lifeng Tian
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Wenjun Zhang
- Center of Super-Diamond and Advanced Films (COSADF) and Department of Materials Science and Engineering, City University of Hong Kong SAR, P.R.China
| | - Xiang-Min Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
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Du Q, Li B, Shi S, Zhang K, Zhang Y, Cheng S, Zhou Z, Liu F, Sun S, Sun Y, Liu W. Relationship between the intermediate phases of the sputtered Zn(O,S) buffer layer and the conduction band offset in Cd-free Cu(In,Ga)Se 2 solar cells. CrystEngComm 2020. [DOI: 10.1039/d0ce00216j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
Intermediate phases are formed in Zn(O,S) thin films with different oxygen fluxes, affecting the device performance.
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Paul S, Ghosh S, De SK. Efficient Charge Separation in Plasmonic ZnS@Sn:ZnO Nanoheterostructure: Nanoscale Kirkendall Effect and Enhanced Photophysical Properties. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2018; 34:4324-4339. [PMID: 29571262 DOI: 10.1021/acs.langmuir.8b00442] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Tetravalent Sn doped ZnO nanocrystals show excellent plasmonic absorbance in the visible region. Plasmonic ZnS@Sn:ZnO core-shell heterostructures have been synthesized by the anion exchange process where the O2- is exchanged by S2- anion. An increase of sulfur concentration induces interior hollow structures arising from the different diffusion rates of O2- and S2- ions. Gradual transformation of wurtztie ZnO nanocrystals in the anion exchange process stabilizes the wurtzite crystalline phase of ZnS. Carrier concentration and various types of intrinsic defect states in both ZnO and ZnS result in ultraviolet, blue, and green emissions. The coexistence of exciton-plasmon coupling in the same nanoparticle and efficient electron-hole separation in type II heterostructure increases the photocatalytic activity and photo current gain.
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Affiliation(s)
- Sumana Paul
- Department of Materials Science , Indian Association for the Cultivation of Science , Kolkata 700032 , India
| | - Sirshendu Ghosh
- Department of Materials Science , Indian Association for the Cultivation of Science , Kolkata 700032 , India
| | - Subodh Kumar De
- Department of Materials Science , Indian Association for the Cultivation of Science , Kolkata 700032 , India
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