Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures

Semitransparent Perovskite Solar Cells with Ultrathin Protective Buffer Layers

Semitransparent perovskite solar cells (ST-PSCs) are increasingly important in a range of applications, including top cells in tandem devices and see-through photovoltaics. Transparent conductive oxides (TCOs) are commonly used as transparent electrodes, with sputtering being the preferred deposition method. However, this process can damage exposed layers, affecting the electrical performance of the devices. In this study, an indium tin oxide (ITO) deposition process that effectively suppresses sputtering damage was developed using a transition metal oxides (TMOs)-based buffer layer. An ultrathin (<10 nm) layer of evaporated vanadium oxide or molybdenum oxide was found to be effective in protecting against sputtering damage in ST-PSCs for tandem applications, as well as in thin perovskite-based devices for building-integrated photovoltaics. The identification of minimal parasitic absorption, the high work function and the analysis of oxygen vacancies denoted that the TMO layers are suitable for use in ST-PSCs. The highest fill factor (FF) achieved was 76%, and the efficiency (16.4%) was reduced by less than 10% when compared with the efficiency of gold-based PSCs. Moreover, up-scaling to 1 cm2-large area ST-PSCs with the buffer layer was successfully demonstrated with an FF of ∼70% and an efficiency of 15.7%. Comparing the two TMOs, the ST-PSC with an ultrathin V2Ox layer was slightly less efficient than that with MoOx, but its superior transmittance in the near infrared and greater light-soaking stability (a T80 of 600 h for V2Ox compared to a T80 of 12 h for MoOx) make V2Ox a promising buffer layer for preventing ITO sputtering damage in ST-PSCs.

Analog and Digital Bipolar Resistive Switching in Co-Al-Layered Double Hydroxide Memristor

We demonstrate a nonvolatile memristor based on Co-Al-layered double hydroxide (Co-Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co-Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co-Al LDHs in the active layer. While different, Co-Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications.

Approaches to synthesize MgO nanostructures for diverse applications

Magnesium oxide remained interesting from long time for several important phenomena like; defect induced magnetism, spin electron reflectivity, broad laser emission etc. Moreover, nanostructures of this material exhibited suitability for different kinds of applications ranging from wastewater treatment to spintronics depending upon their shape and size. In this way, researchers had grown nanostructures in the form of nanoparticles, thin films, nanotubes, nanowalls, nanobelts. Though nanoparticles and thin films are well known form of nanostructures and wide variety of synthesis approaches are available, however, limited methodology for other nanostructures are available. In order to grow these nanostructures in an optimized way an understanding of these methods is essential. Thus, this review article depicts an overview of various approaches for design of different kinds of nanostructures.

Atomic-scale investigation of MgO growth on fused quartz using angle-dependent NEXAFS measurements

The phenomena related to thin film growth have always been interesting to the scientific community. Experiments related to these phenomena not only provide an understanding but also suggest a path for the controlled growth of these films. For the present work, MgO thin film growth on fused quartz was investigated using angle-dependent near-edge X-ray absorption fine structure (NEXAFS) measurements. To understand the growth of MgO, sputtering was allowed for 5, 10, 25, 36, 49, 81, 144, 256, and 400 min in a vacuum better than 5.0 × 10⁻⁷ torr. NEXAFS measurements revealed the evolution of MgO at the surface of fused quartz for sputtering durations of 144, 256, and 400 min. Below these sputtering durations, no MgO was observed. NEXAFS measurements further envisaged a systematic improvement of Mg²⁺ ion coordination in the MgO lattice with the sputtering duration. The onset of non-interacting molecular oxygen on the surface of the sputtered species on fused quartz was also observed for sputtering duration up to 81 min. Angle-dependent measurements exhibited the onset of an anisotropic nature of the formed chemical bonds with sputtering, which dominated for higher sputtering duration. X-ray diffraction (XRD) studies carried out for sputtering durations of 144, 256, and 400 min exhibited the presence of the rocksalt phase of MgO. Annealing at 700 °C led to the dominant local electronic structure and improved the crystallinity of MgO. Rutherford backscattering spectrometry (RBS) and cross-sectional scanning electron microscopy (SEM) revealed a layer of almost 80 nm was obtained for a sputtering duration of 400 min. Thus, these angle-dependent NEXAFS measurements along with XRD, RBS, and SEM analyses were able to give a complete account for the growth of the thin films. Moreover, information specific to the coordination of the ions, which is important in case of ultrathin films, could be obtained successfully using this technique.

Near edge X-ray absorption fine structure measurements reveal the formation of MgO on fused quartz substrate.