Advances in thermoelectric AgBiSe2: Properties, strategies, and future challenges

Thermoelectric materials are attracting considerable attention to alleviate the global energy crisis by enabling the direct conversion of heat into electricity. As a class of I-V-VI2 semiconductors, AgBiSe2 is expected to be the potential thermoelectric material to replace conventional PbTe-based compounds due to its non-toxic and abundant nature of its constituent elements. This review article summarizes the fundamental properties of AgBiSe2, thermoelectric properties, the effect of different dopants on its transport properties and entropy engineering for cubic phase stabilization with the detailed description of related techniques used to analyze the properties of AgBiSe2. The current thermoelectric figure-of-merit and approaches to further improve performance and operational stability are also discussed.

Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p-Type Dopability in AgBiSe2 -SnSe Thermoelectrics

Cation disordering is commonly found in multinary cubic compounds, but its effect on electronic properties has been neglected because of difficulties in determining the ordered structure and defect energetics. An absence of rational understanding of the point defects present has led to poor reproducibility and uncontrolled conduction type. AgBiSe₂ is a representative compound that suffers from poor reproducibility of thermoelectric properties, while the origins of its intrinsic n-type conductivity remain speculative. Here, it is demonstrated that cation disordering is facilitated by Bi_Ag charged antisite defects in cubic AgBiSe₂ which also act as a principal donor defect that greatly controls the electronic properties. Using density functional theory calculations and in situ Raman spectroscopy, how saturation annealing with selenium vapor can stabilize p-type conductivity in cubic AgBiSe₂ alloyed with SnSe at high temperatures is elucidated. With stable and controlled hole concentration, a peak is observed in the weighted mobility and the density-of-states effective mass in AgBiSnSe₃ , implying an increased valley degeneracy in this system. These findings corroborate the importance of considering the defect energetics for exploring the dopability of ternary thermoelectric chalcogenides and engineering electronic bands by controlling self-doping.

First-Principles Calculations of Thermoelectric Transport Properties of Quaternary and Ternary Bulk Chalcogenide Crystals

Chalcogenide crystals have a wide range of applications, especially as thermoelectric materials for energy conversion. Thermoelectric materials can be used to generate an electric current from a temperature gradient based on the Seebeck effect and based on the Peltier effect, and they can be used in cooling applications. Using first-principles calculations and semiclassical Boltzmann theory, we have computed the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, power factor, and figure of merit of 30 chalcogenide crystals. A Quantum Espresso package is used to calculate the electronic properties and locate the Fermi level. The transport properties are then calculated using the BoltzTraP code. The 30 crystals are divided into two groups. The first group has four crystals with quaternary composition (A₂BCQ₄) (A = Tl; B = Cd, Hg; C = Si, Ge, Sn; Q = S, Se, Te). The second group contains 26 crystals with the ternary composition (A’B’Q₂) (A’ = Ag, Cu, Au, Na; B’ = B, Al, Ga, In; Q = S, Se, Te). Among these 30 chalcogenide crystals, the results for 11 crystals: Tl₂CdGeSe₄, Tl₂CdSnSe₄, Tl₂HgSiSe₄, Tl₂HgSnS₄, AuBSe₂, AuBTe₂, AuAlTe₂, AuGaTe₂, AuInTe₂, AgAlSe₂, and AgAlTe₂ are revealed for the first time. In addition, temperature-dependent transport properties of pure and doped AgSbSe₂ and AgSbTe₂ crystals with dopant compositions of AgSb_0.94Cd_0.06Te₂ and AgSbTe_1.85Se_0.15 were explored. These results provide an excellent database for bulk chalcogenides crucial for a wide range of potential applications in renewable energy fields.

Alternative Lone-Pair ns2 -Cation-Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications

Lead halide perovskites have emerged in the last decade as advantageous high-performance optoelectronic semiconductors, and have undergone rapid development for diverse applications such as solar cells, light-emitting diodes , and photodetectors. While material instability and lead toxicity are still major concerns hindering their commercialization, they offer promising prospects and design principles for developing promising optoelectronic materials. The distinguished optoelectronic properties of lead halide perovskites stem from the Pb²⁺ cation with a lone-pair 6s² electronic configuration embedded in a mixed covalent-ionic bonding lattice. Herein, we summarize alternative Pb-free semiconductors containing lone-pair ns² cations, intending to offer insights for developing potential optoelectronic materials other than lead halide perovskites. We start with the physical underpinning of how the ns² cations within the material lattice allow for superior optoelectronic properties. We then review the emerging Pb-free semiconductors containing ns² cations in terms of structural dimensionality, which is crucial for optoelectronic performance. For each category of materials, the research progresses on crystal structures, electronic/optical properties, device applications, and recent efforts for performance enhancements are overviewed. Finally, the issues hindering the further developments of studied materials are surveyed along with possible strategies to overcome them, which also provides an outlook on the future research in this field.

Crystal Structure and Thermoelectric Transport Properties of As-Doped Layered Pnictogen Oxyselenides NdO0.8F0.2Sb1-xAsxSe2

We report the synthesis and thermoelectric transport properties of As-doped layered pnictogen oxyselenides NdO_0.8F_0.2Sb_1−xAs_xSe₂ (x ≤ 0.6), which are predicted to show high-performance thermoelectric properties based on first-principles calculation. The crystal structure of these compounds belongs to the tetragonal P4/nmm space group (No. 129) at room temperature. The lattice parameter c decreases with increasing x, while a remains almost unchanged among the samples. Despite isovalent substitution of As for Sb, electrical resistivity significantly rises with increasing x. Very low thermal conductivity of less than 0.8 Wm⁻¹K⁻¹ is observed at temperatures between 300 and 673 K for all the examined samples. For As-doped samples, the thermal conductivity further decreases above 600 K. Temperature-dependent synchrotron X-ray diffraction indicates that an anomaly also occurs in the c-axis length at around 600 K, which may relate to the thermal transport properties.

Fabrication of Skutterudite-Based Tubular Thermoelectric Generator

The conversion efficiency of the thermoelectric generator (TEG) is adversely affected by the quality of thermal contact between the module and the heat source. TEGs with the planar substrate are not suitable for the curved heat sources. Several attempts have been made to tackle this issue by fabricating complex tubular-shaped TEGs; however, all efforts have been limited to low-temperature applications. Furthermore, the electrical contact resistance of the module is critical to achieving a high-power output. In this work, we developed the tubular TEG with significantly low specific contact resistance by optimizing the joining process. We show that the modified resistance welding (MRW) performed by spark plasma sintering (SPS) is an efficient joining method for the fabrication of the TE module, with high feasibility and scalability. This research seeks to suggest important design rules to consider when fabricating TEGs.

Local Structure and Influence of Sb Substitution on the Structure-Transport Properties in AgBiSe2

Owing to their intrinsically low thermal conductivity and chemical diversity, materials within the I-V-VI₂ family, and especially AgBiSe₂, have recently attracted interest as promising thermoelectric materials. However, further investigations are needed in order to develop a more fundamental understanding of the origin of the low thermal conductivity in AgBiSe₂, to evaluate possible stereochemical activity of the 6s² lone pair of Bi³⁺, and to further elaborate on chemical design approaches for influencing the occurring phase transitions. In this work, a combination of temperature-dependent X-ray diffraction, Rietveld refinements of laboratory X-ray diffraction data, and pair distribution function analyses of synchrotron X-ray diffraction data is used to tackle the influence of Sb substitution within AgBi_1-xSb_xSe₂ (0 ⩽ x ⩽ 0.15) on the phase transitions, local distortions, and off-centering of the structure. This work shows that, similar to other lone-pair-containing materials, local off-centering and distortions can be found in AgBiSe₂. Furthermore, electronic and thermal transport measurements, in combination with the modeling of point-defect scattering, highlight the importance of structural characterizations toward understanding changes induced by elemental substitutions. This work provides new insights into the structure-transport correlations of the thermoelectric AgBiSe₂.

Doping-Induced Polymorph and Carrier Polarity Changes in Thermoelectric Ag(Bi,Sb)Se2 Solid Solution

Silver bismuth diselenide (AgBiSe₂) is an n-type thermoelectric material that exhibits a complex structural phase transition from the hexagonal to cubic phase, while silver antimony diselenide (AgSbSe₂) is a p-type thermoelectric material that crystallizes in the cubic phase at all temperatures. Here, we investigate the crystal structure and thermoelectric properties of Ag(Bi,Sb)Se₂ solid solution, employing AgBi_0.9Sb_0.1Se₂ and AgBi_0.7Sb_0.3Se₂ as representative samples. The carrier polarity of AgBi_0.9Sb_0.1Se₂ is converted from the n-type to p-type by Pb doping, accompanied by a polymorphic change to the cubic phase. It is difficult to obtain highly conductive p-type hexagonal AgBiSe₂-based materials, although first-principles calculations predict high-performance thermoelectric properties for these systems. We also demonstrate that cubic AgBi_0.7Sb_0.3Se₂ undergoes a polymorphic change to the hexagonal phase upon Nb doping. The present study show that polymorphic changes inevitably occurred upon Pb/Nb doping to optimize thermoelectric properties of Ag(Bi,Sb)Se₂ solid solution.