Boron nitride nanotubes as a heat sinking and stress-relaxation layer for high performance light-emitting diodes

1D and 2D Boron Nitride Nano Structures: A Critical Analysis for Emerging Applications in the Field of Nanocomposites

Boron nitride (BN) with its 1D and 2D nano derivatives have gained immense popularity in both the field of research and applications. These nano derivatives have proved to be one of the most promising fillers which can be incorporated in polymers to form nanocomposites with excellent properties. These materials have been around for 25 years whereas significant research has been done in this field for only the past decade. There are many interesting properties which are imparted to the nanocomposites wherein thermal stability, large energy band gap, resistance to oxidation, excellent thermal conductivity, chemical inertness, and exceptional mechanical properties are just a few worthy of mention. Hexagonal boron nitride (h-BN) was selected as the parent material by most researchers reviewed in this paper through which 2D derivative Boron nitride nanosheets (BNNS) and 1D derivative Boron nitride nanotubes (BNNTs) are synthesized. This review will focus on the in-depth properties of h-BN and further will concisely focus on BNNS and BNNTs for their various properties. A detailed discussion of the addition of BNNS and BNNTs into polymers to form nanocomposites, their synthesis, properties, and applications is followed by a summary determining the most suitable synthesizing processes and the materials, keeping in mind the current challenges.

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes

Substrate-induced biaxial compressive stress and threading dislocations (TDs) have been recognized to severely impair the performance, stability, and reliability of InGaN/GaN light-emitting diodes (LEDs) for quite some time. In this study, a defect-selective-etched (DSE) porous GaN layer is fabricated employing electro-chemical etching and applied as a buffer layer for the development of InGaN/GaN LEDs with high quantum efficiency. Based on the analysis of photoluminescence and micro-Raman spectra, it has been revealed that the overgrown GaN epilayer on the DSE porous GaN has a relatively low TDs and relaxation of compressive stress in comparison to the conventional GaN epilayer. The remarkable improvement in the internal quantum efficiency of the InGaN/GaN LEDs is directly attributable to the strong radiative recombination in InGaN/GaN multi-quantum-wells caused by stress relaxation and TDs annihilation. Our findings indicate that the use of DSE porous GaN as a buffer layer may be a viable approach for producing crystalline GaN epilayers and high-performance LEDs.

Boron nitride nanotubes: synthesis and applications

Boron nitride nanotube (BNNT) has similar tubular nanostructure as carbon nanotube (CNT) in which boron and nitrogen atoms arranged in a hexagonal network. Owing to the unique atomic structure, BNNT has numerous excellent intrinsic properties such as superior mechanical strength , high thermal conductivity, electrically insulating behavior, piezoelectric property, neutron shielding capability, and oxidation resistance. Since BNNT was first synthesized in 1995, developing efficient BNNT production route has been a significant issue due to low yield and poor quality in comparison with CNT, thus limiting its practical uses. However, many great successes in BNNT synthesis have been achieved in recent years, enabling access to this material and paving the way for the development of promising applications. In this article, we discussed current progress in the production of boron nitride nanotube, focusing on the most common and effective methods that have been well established so far. In addition, we presented various applications of BNNT including polymer composite reinforcement, thermal management packages, piezo actuators, and neutron shielding nanomaterial.