Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure

Leitão J, Lima JC, Ferreira I. Microwave Synthesis of Silver Sulfide and Silver Nanoparticles: Light and Time Influence

Silver sulfide (Ag₂S) is a low band gap material, which absorbs near-infrared light and is of great importance in areas such as nanotechnology and biomedicine. We report the influence of the starting reagents, synthesis time, and light radiation on the geometry and size of silver sulfide nanoparticles and on the fraction of metallic Ag obtained in a microwave reactor. The X-ray diffraction diffractograms confirmed that Ag₂S is the main product if the reaction's precursor contains silver in the oxidation state of +1 and mostly metallic silver (Ag°) when it is +2. Small nanoparticles (∼6 nm) of spherical geometry are present in the transmission electron microscopy images for the synthesis performed with the lamp light ON, while with the light switched OFF, wider and hundreds of nanometers longer particles are observed. This discriminative effect occurs with shorter synthesis time duration (<10 min) but when the time of reaction is extended, the particles coalesce for both light and dark conditions. Overall, it was observed by photoluminescence that crystalline Ag and Ag₂S 4-8 nm nanoparticles obtained in 15 min and light irradiation during synthesis have a clear relative increase of the radiative recombination channels of the charged carriers, which are typical of materials characterized by the involvement of low density of states inside the band gap.

Photodegradation of Si-doped GaAs nanowire

Researching optical effects in nanowires may require a high pump intensity which under ambient conditions can degrade nanowires due to thermal oxidation. In this work we investigated the photodegradation of a single Si-doped GaAs nanowire by laser heating in air. To understand the changes that occurred on the nanowire we carried out Raman spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, and photoluminescence spectroscopy in laser damaged regions as well as in non-affected ones. From Raman Stokes and anti-Stokes measurements we estimated the local temperature that the oxidation process of the nanowire (NW) surface starts at as 661 K, resulting in two new Raman modes at 200 cm⁻¹ and 259 cm⁻¹. Scanning electron microscopy and energy dispersive X-ray spectroscopy measurements showed a significant loss of arsenic in the oxidized regions, but no erosion of the nanowire. Micro-photoluminescence measurements showed the near-band-edge emission of GaAs along the nanowire, as well as a new emission band at 755 nm corresponding to polycrystalline β-Ga₂O₃ formation. Our results also indicate that neither amorphous As nor crystalline As were deposited on the surface of the nanowire. Combining different experimental techniques, this study showed the formation of polycrystalline β-Ga₂O₃ by oxidation of the nanowire surface and the limits for performing spectroscopic investigations on individual GaAs NWs under ambient air conditions.

In order to comprehend the photodegradation of GaAs NWs, we investigated their thermal oxidation process in air induced by laser heating in a broad local temperature range.

Defect Manipulation To Control ZnO Micro-/Nanowire-Metal Contacts

Surface states that induce depletion regions are commonly believed to control the transport of charged carriers through semiconductor nanowires. However, direct, localized optical, and electrical measurements of ZnO nanowires show that native point defects inside the nanowire bulk and created at metal-semiconductor interfaces are electrically active and play a dominant role electronically, altering the semiconductor doping, the carrier density along the wire length, and the injection of charge into the wire. We used depth-resolved cathodoluminescence spectroscopy to measure the densities of multiple point defects inside ZnO nanowires, substitutional Cu on Zn sites, zinc vacancy, and oxygen vacancy defects, showing that their densities varied strongly both radially and lengthwise for tapered wires. These defect profiles and their variation with wire diameter produce trap-assisted tunneling and acceptor trapping of free carriers, the balance of which determines the low contact resistivity (2.6 × 10^-3 Ω·cm^-2) ohmic, Schottky (Φ ≥ 0.35 eV) or blocking nature of Pt contacts to a single nano/microwire. We show how these defects can now be manipulated by ion beam methods and nanowire design, opening new avenues to control nanowire charge injection and transport.

Nanoscale investigation of a radial p-n junction in self-catalyzed GaAs nanowires grown on Si (111)

One obstacle for the development of nanowire (NW) solar cells is the challenge to assess and control their nanoscale electrical properties. In this work a top-cell made of p-n GaAs core/shell NWs grown on a Si(111) substrate by Molecular Beam Epitaxy (MBE) is investigated by high resolution charge collection microscopy. Electron Beam Induced Current (EBIC) analyses of single NWs have validated the formation of a homogeneous radial p-n junction over the entire length of the NWs. The radial geometry leads to an increase of the junction area by 38 times with respect to the NW footprint. The interface between the NWs and the Si(111) substrate does not show any electrical loss, which would have led to a decrease of the EBIC signal. Single NW I-V characteristics present a diodic behavior. A model of the radial junction single NW is proposed and the electrical parameters are estimated by numerical fitting of the I-Vs and of the EBIC map. Solar cells based on NW arrays were fabricated and analyzed by EBIC microscopy, which evidenced the presence of a Schottky barrier at the NW/ITO top contact. Improvement of the top contact quality is achieved by thermal annealing at 400 °C, which strongly reduces the parasitic Schottky barrier.