In Situ Electrochemical Cobalt Doping in Perovskite-Structured Lanthanum Nickelate Thin Film Toward Energy Conversion Enhancement of Polymer Solar Cells

This study demonstrates that the electrochemical doping of lanthanum nickelate (LNO) with cobalt ions is a promising strategy for enhancing its physical and electrochemical properties, which are critical for energy storage and conversion devices. LNO emerges as a promising hole transport layer (HTL) in solar cells due to its stability, large band gap, and high transparency. Nevertheless, its low conductivity and improperly aligned band positions are persistent problems. Here, in a pioneering endeavor, Co-doped LNO thin films were synthesized electrochemically and applied as the HTL in polymer solar cells (PSCs). Characterization revealed the impact of Co doping on the electrochemical, structural, morphological, and optical properties of LNO thin films. Depending on the Co doping level, PSCs based on 10 mol % Co-doped LNO outperformed pure LNO, achieving a champion efficiency of 6.11% with enhanced short-circuit current density (12.84 mA cm-2), fill factor (68%), open-circuit voltage (0.70 V), and external quantum efficiency (82.6%). This enhancement resulted from decreased series resistance, refined surface morphology, minimized trap-assisted recombination, enhanced conductivity, increased charge carrier production, favorable energy level alignment, and improved current extraction facilitated by LNC0.10O HTL. Moreover, the unencapsulated PSC-LNC0.10O long-term stability notably improved and retained 86% of its initial PCE after 450 h storage in ambient air, 82% after being continuously heated to 85 °C for 300 h, and 80% after operating at maximum power point for 300 h. These findings offer a straightforward approach to enhancing PSC performance through Co doping of LNO, supported by density functional theory (DFT) calculations that validate the experimental results and confirm the improvement in optical properties and stability of PSCs as an HTL.

Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

The accurate determination of the electrical properties of photovoltaic devices is of utmost importance to predict and optimize their overall optoelectronic performance. For example, the minority carrier lifetime and the carrier diffusion length have a strong relationship with the carrier recombination rate. Additionally, parasitic resistances have an important effect on the fill factor of a solar cell. Within this context, the alternating current (AC) and direct current (DC) electrical characteristics of Si-based metal–insulator–semiconductor (MIS) Schottky barrier diodes with the basic structure Al/Si/TiO2/NiCr were studied, aiming at using them as photovoltaic devices. The basic diode structure was modified by adding nanostructured porous silicon (nanoPS) layers and by infiltrating silver nanoparticles (AgNPs) into the nanoPS layers, leading to Al/Si+nanoPS/TiO2/NiCr and Al/Si+nanoPS+AgNPs/TiO2/NiCr structures, respectively. The AC electrical properties were studied using a combination of electrochemical impedance spectroscopy and Mott–Schottky analysis, while the DC electrical properties were determined from current–voltage measurements. From the experimental results, an AC equivalent circuit model was proposed for the three different MIS Schottky barrier diodes under study. Additionally, the most significant electrical parameters were calculated. The results show a remarkable improvement in the performance of the MIS Schottky barrier diodes upon the addition of hybrid nanoPS layers with embedded Ag nanoparticles, opening the way to their use as photovoltaic devices.

Enhanced efficiency of Cu2ZnSn(S,Se)4 solar cells via anti-reflectance properties and surface passivation by atomic layer deposited aluminum oxide

Reducing interface recombination losses is one of the major challenges in developing Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cells. Here, we propose a CZTSSe solar cell with an atomic layer deposited Al₂O₃ thin film for surface passivation. The influence of passivation layer thickness on the power conversion efficiency (PCE), short-circuit current density (J_sc), open-circuit voltage (V_oc) and fill factor (FF) of the solar cell is systematically investigated. It is found that the Al₂O₃ film presents notable antireflection (AR) properties over a broad range of wavelengths (350–1000 nm) for CZTSSe solar cells. With increasing Al₂O₃ thickness (1–10 nm), the average reflectance of the CZTSSe film decreases from 12.9% to 9.6%, compared with the average reflectance of 13.6% for the CZTSSe film without Al₂O₃. The Al₂O₃ passivation layer also contributes to suppressed surface recombination and enhanced carrier separation. Passivation performance is related to chemical and field effect passivation, which is due to released H atoms from the Al–OH bonds and the formation of Al vacancies and O interstitials within Al₂O₃ films. Therefore, the J_sc and V_oc of the CZTSSe solar cell with 2 nm-Al₂O₃ were increased by 37.8% and 57.8%, respectively, in comparison with those of the unpassivated sample. An optimal CZTSSe solar cell was obtained with a V_oc, J_sc and η of 0.361 V, 33.78 mA and 5.66%. Our results indicate that Al₂O₃ films show the dual functions of AR and surface passivation for photovoltaic applications.

ALD-Al₂O₃ is used as a passivation layer in a CZTSSe device and optimal device parameters are obtained by precisely controlling Al₂O₃ thickness.

All-inorganic inverse perovskite solar cells using zinc oxide nanocolloids on spin coated perovskite layer

We confirmed the influence of ZnO nanoparticle size and residual water on performance of all inorganic perovskite solar cells. By decreasing the size of the ZnO nanoparticles, the short-circuit current density (Jsc) and open circuit photovoltage (Voc) values are increased and the conversion efficiency is improved. Although the Voc value is not affected by the influence of residual water in the solution for preparing the ZnO layer, the Jsc value drops greatly. As a result, it was found that it is important to use the oxide nanoparticles with a small particle diameter and to reduce the water content in the oxide forming material in order to manufacture a highly efficient all inorganic perovskite solar cells.