Thermal Expansion of 3C-SiC Obtained from In-Situ X-ray Diffraction at High Temperature and First-Principal Calculations

In situ X-ray crystallography powder diffraction studies on beta silicon carbide (3C-SiC) in the temperature range 25-800 °C at the maximum peak (111) are reported. At 25 °C, it was found that the lattice parameter is 4.596 Å, and coefficient thermal expansion (CTE) is 2.4 ×10-6/°C. The coefficient of thermal expansion along a-direction was established to follow a second order polynomial relationship with temperature (α11=-1.423×10-12T2+4.973×10-9T+2.269×10-6). CASTEP codes were utilized to calculate the phonon frequency of 3C-SiC at various pressures using density function theory. Using the Gruneisen formalism, the computational coefficient of thermal expansion was found to be 2.2 ×10-6/°C. The novelty of this work lies in the adoption of two-step thermal expansion determination for 3C-SiC using both experimental and computational techniques.

Control of Surface Chemical Reactions through Solid Stiffness

Control of surface reactions is commonly achieved by modification of surface electronic structures. Here, we discover an alternative pathway for controlling surface reactions by tuning the mechanical stiffness of the underlying material. We find that in addition to the typically assumed surface electronic contribution right at the reactive site, the contribution from the deformation of the bulk region plays a vital role in controlling surface reactions. The underlying mechanism is an elastic relaxation of the solid, which depends on the material's stiffness and can be modified by tuning bulk stoichiometry. The effect of bulk stiffness on surface reactions has been demonstrated by considering hydrogen scission reaction and oxygen incorporation reaction during corrosion of amorphous SiC in water and air, respectively. Our results imply that tuning of bulk stiffness by modifying stoichiometry can provide an effective method for controlling surface reactions.

First-Principles Study on Various Point Defects Formed by Hydrogen and Helium Atoms in Tungsten

The different point defects formed by two hydrogen atoms or two helium atoms in tungsten were investigated through first-principles calculation. The energetically favorable site for a hydrogen atom is tetrahedral interstitial site while substitutional site is the most preferred site for a helium atom. The formation energies of two hydrogen or helium atoms are determined by their positions, and they are not simply 2 times the formation energy of a single hydrogen or helium atom’s defect. After relaxation, two adjacent hydrogen atoms are away from each other while helium atoms are close to each other. The reasons for the interaction between two hydrogen or helium atoms are also discussed.