Understanding the structure, bonding and reactions of nanocrystalline semiconductors: a novel high-resolution instrumental method of solid-state synchronous luminescence spectroscopy

This Perspective Article describes the recent advancements in studies of nanocrystalline metal oxides using a novel ultra-high resolution method, solid-state synchronous luminescence spectroscopy (SS-SLS). Semiconductors notably include titanium dioxide and these studies shed light on the detailed electronic structure, composition, and their reactions. First, we critically discuss the limitations of the major existing non-spectroscopic and spectroscopic methods of characterization of electronic structure of nanocrystalline semiconductors and insulators. Second, we describe the foundations and the setup of SS-SLS as an enhanced-resolution, facile, non-contact, non-destructive, and highly capable method of studies of nanomaterials. Third, the following insights are featured which are obtained by SS-SLS, but are not available by other methods: (a) detection of traps of electric charge (specific mid-gap states); (b) discrimination between "surface" and "bulk" sites; (c) in situ studies of composite nanomaterials and mechanisms of reactions, (d) the derivative SS-SLS for accurate determination of energies of absorption and emission. The specific advantages of SS-SLS versus other methods and in direct comparison with "conventional" photoluminescence spectroscopy are highlighted. Finally, new opportunities and challenges of SS-SLS are presented. SS-SLS is an advanced spectroscopic method with significant potential to aid academia and industry in studies of chemo-sensing, photocatalysis, optoelectronic materials, applied surface science, development of instrumental analysis, and studies of mechanisms of surface and "bulk" chemical reactions.

Analysis of various solid samples by synchronous fluorescence spectroscopy and related methods: A review

This critical Review covers the literature reports on analysis of different types of solid samples by the synchronous fluorescence spectroscopy (SFS) and its varieties, which include synchronous phosphorescence spectroscopy and synchronous luminescence spectroscopy, in the three decades (1990-2019). Both the qualitative and quantitative spectroscopic analysis is described for a wide range of specimens. Their physical forms and chemical composition include: a) organic and inorganic analytes pre-concentrated from solution on matrices (beads, membranes, filters, disks, paper), b) natural and synthetic multi-component specimens of complex composition (biological tissues, soil, polymers) and c) inorganic and coordination compounds including porous materials and particularly metal-organic frameworks (MOFs). The comparison with the data obtained by "conventional" optical emission spectroscopy and other analytical techniques (when available) is presented. The specific advantages of the high-resolution varieties of the method, the first- and second-derivative solid-state synchronous fluorescence, luminescence, and phosphorescence spectroscopy are described. An attention is also paid to practical conditions of the typical tests, and the relevant experimental setups. The impetus is on the emerging capabilities of this highly promising method e.g. in-situ monitoring of chemical reactions, in-vivo diagnostics, surface reactions, and detection of the adsorbate. The existing challenges are analyzed, and the unexplored application "niches" to further develop this and the related analytical methods are revealed. 145 references, 9 Tables, 17 Figures and 1 Scheme.

Interplay of orbital hopping and perpendicular magnetic field in anisotropic phase transitions for Bernal bilayer graphene and hexagonal boron-nitride

We theoretically address the perpendicular magnetic field effects on the orbital electronic phase of Bernal bilayer graphene and hexagonal boron-nitride (h-BN).

Strain engineering of optical activity in phosphorene

Optical activity is one of the most fascinating fields in current physics. The strong anisotropic feature in monolayer phosphorene leads to the emergence of non-trivial optoelectronic physics. This paper is devoted to a detailed analysis of strain effects on the optical activity of phosphorene ranging from low-optical-field to high-optical-field. To do so, a numerical study of the two-band tight-binding model is accomplished using the Harrison rule and the linear response theory. Although the transparency of phosphorene confirms at all frequencies independent of the strain modulus and direction, on average, from low- to high-optical-field limit, the polarization of the reflected wave at critical strains becomes circular and the ellipse axis tends to a rotation of 180°. It is found that the maximum absorption takes place at high-energy transitions, which quantitatively depends strongly on the strain modulus and direction. Furthermore, a detailed investigation of compressive and tensile strains results in the dominant contribution of the in-plane compressive and out-of-plane tensile strains to the reflected/transmitted light for low- and intermediate-optical-field ranges, whilst both contribute for the high-optical-field limit. However, overall, in-plane compressive and out-of-plane tensile strains come in to play a role in the absorption spectra. Thereby, the quality of the determined reflection, transmission and absorption waves depends on the regarded regime of the optical field, strain modulus, and strain orientation. These findings if sufficient can be performed and/or tuned experimentally, and a vast number of phosphorene-based optoelectronic devices can be achieved.

This paper is devoted to a detailed analysis of strain effects on the optical activity of phosphorene ranging from low-optical-field to high-optical-field.

Electronic and optical properties of Janus ZrSSe by density functional theory

In the present work, we investigate systematically the electronic and optical properties of Janus ZrSSe using first-principles calculations. Our calculations demonstrate that the Janus ZrSSe monolayer is an indirect semiconductor at equilibrium. The band gap of the Janus ZrSSe is 1.341 eV using the Heyd–Scuseria–Ernzerhof hybrid functional, larger than the band gap of ZrSe₂ monolayer and smaller than that of ZrS₂ monolayer. Based on the analysis of the band edge alignment, we confirm that the Janus ZrSSe monolayer possesses photocatalytic activities that can be used in water splitting applications. While strain engineering plays an important role in modulating the electronic properties and optical characteristics of the Janus ZrSSe monolayer, the influence of the external electric field on these properties is negligible. The biaxial strain, ε_b, has significantly changed the band of the Janus ZrSSe monolayer, and particularly, the semiconductor–metal phase transition which occurred at ε_b = 7%. The Janus ZrSSe monolayer can absorb light in both visible and ultraviolet regions. Also, the biaxial strain has shifted the first optical gap of the Janus ZrSSe monolayer. Our findings provide additional information for the prospect of applying the Janus ZrSSe monolayer in nanoelectronic devices, especially in water splitting technology.

In the present work, we investigate systematically the electronic and optical properties of Janus ZrSSe using first-principles calculations.