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Ali M, Yousaf M, Munir J, Iqbal Khan MJ. Achieving controllable multifunctionality through layer sliding. J Mol Graph Model 2024; 126:108638. [PMID: 37757650 DOI: 10.1016/j.jmgm.2023.108638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 09/05/2023] [Accepted: 09/18/2023] [Indexed: 09/29/2023]
Abstract
Dynamical variation of physical properties in a controllable fashion provides exciting possibilities to obtain multifunctional materials. In this work, layer-sliding is employed to modify the structural, interfacial electronic and optical properties of unintercalated and Mg-intercalated two-dimensional (2D) van der Waals heterostructure (vdW-HS) consisting of buckled silicene and hexagonal boron nitride (hBN). The most stable stacking configuration of silicene over hBN is screened out and then intercalated with Mg at the interface. Dynamical-dependent changes in the properties of vdW-HS are performed by sliding silicene over hBN monolayer in the absence and presence of the intercalant. Layer-sliding is carried out in equal length intervals, and various parametric quantities related to the physical characteristics of the vdW-HS are repeatedly calculated and compared. Apart from various parametric quantities, stability of unintercalated and Mg-intercalated vdW-HS is also checked by means of relative total energies, binding energies and vdW gaps along the sliding pathway. Comparison of binding energies shows that the un-slided, half-slided, and fully-slided Mg-intercalated vdW-HS are 1.52, 1.44 and 1.42 eV more stable than the unintercalated vdW-HS. Opening of a small band gap of 12, 31 and 28 meV for un-slided, half-slided and fully-slided unintercalated vdW-HS, respectively, is worth mentioning. To study the interfacial electronic behavior, planar average charge density difference (Δρ) and charge transfer (ΔQ) are also calculated and varied via layer-sliding. Further, we calculated diverse optical spectra such as the complex dielectric function (DF), electron energy loss function [L(ω)], diagonal components of dielectric tensor [ε(iω)], refractive index [n(ω)], extinction coefficient [k(ω)], absorption coefficient [α(ω)], and reflectivity [R(ω)] for un-slided, half-slided and fully-slided unintercalated and Mg-intercalated vdW-HS. Interestingly, the polarization and energy losses have been reduced in the case of Mg-intercalated vdW-HS. The suggested layer-sliding method can be established as a general scheme for bringing multifunctionality into a layered material.
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Affiliation(s)
- Mubashar Ali
- Department of Physics, University of Education, Lahore, Pakistan
| | - Masood Yousaf
- Department of Physics, University of Education, Lahore, Pakistan.
| | - Junaid Munir
- Department of Physics, Riphah International University, Lahore, Pakistan
| | - M Junaid Iqbal Khan
- Laboratory of Theoretical and Experimental Physics, Department of Physics, Bahauddin Zakariya University, Multan, 60800, Pakistan
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Xie T, Ma X, Guo Y, Yuan G, Liao J, Ma N, Huang C. A graphene/Janus B 2P 6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field. Phys Chem Chem Phys 2023; 25:31238-31248. [PMID: 37955158 DOI: 10.1039/d3cp03732k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
Lowering the Schottky barrier at the metal-semiconductor interface remains a stern challenge in the field of field-effect transistors. Herein, an in-depth investigation was conducted to explore the formation mechanism of the Schottky barrier via interlayer distance and external electric field, utilizing the first-principles approach. Attributed to the vertical asymmetric structure of B2P6, ohmic contact forms at the interface of a graphene/B2P6(001) heterostructure, and an n-type Schottky contact with a Schottky barrier of 0.51 eV forms at the interface of a graphene/B2P6(001̄) heterostructure. Furthermore, the Schottky barrier height and the contact type can be changed by adjusting the interlayer spacing or applying an electric field along the Z direction. A high carrier concentration of 4.65 × 1013 cm-2 is obtained in the graphene/B2P6(001) heterostructure when an external electric field of 0.05 V Å-1 is applied. Verifiably, alterations in the energy band structure are attributed to the redistribution of charges at the interface. The new findings indicate that GR/B2P6 heterostructures are a key candidate for next-generation Schottky field-effect transistor development.
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Affiliation(s)
- Tian Xie
- School of Science, Hubei University of Technology, Wuhan 430068, China.
| | - Xinguo Ma
- School of Science, Hubei University of Technology, Wuhan 430068, China.
- 111 Research Center, Hubei University of Technology, Wuhan 430068, China.
| | - Youyou Guo
- School of Science, Hubei University of Technology, Wuhan 430068, China.
| | - Gang Yuan
- School of Science, Hubei University of Technology, Wuhan 430068, China.
| | - JiaJun Liao
- School of Science, Hubei University of Technology, Wuhan 430068, China.
| | - Nan Ma
- Key Laboratory of Inorganic Functional Materials and Devices, Chinese Academy of Sciences, Shanghai 201899, China
| | - Chuyun Huang
- 111 Research Center, Hubei University of Technology, Wuhan 430068, China.
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Hiramony NT, Tanisha TT, Tabassum SJ, Subrina S. Numerical characterization of the electronic and optical properties of plumbene/hBN heterobilayer using first-principles study. NANOSCALE ADVANCES 2023; 5:4095-4106. [PMID: 37560423 PMCID: PMC10408619 DOI: 10.1039/d2na00918h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 05/19/2023] [Indexed: 08/11/2023]
Abstract
We present a novel plumbene/hexagonal boron nitride (hBN) heterobilayer with intriguing structural, electronic, and optical properties. Three different stacking patterns of the bilayer are proposed and studied under the framework of density functional theory using first-principles calculations. All the stacking configurations display direct band gaps ranging from 0.399 eV to 0.432 eV in the presence of spin orbit coupling (SOC), whereas pristine plumbene possesses an indirect band gap considering SOC. Based on binding energy calculations, the structures are found to be stable and, consequently, feasible for physical implementation. All three structures exhibit low effective mass, ∼0.20m0 for both electrons and holes, which suggests improved transport characteristics of the plumbene/hBN based electronic devices. The projected density of states reveals that the valence and conduction band peaks around Fermi energy are dominated by the contributions from the plumbene layer of the heterobilayer. Therefore, the hBN layer is a viable candidate as a substrate for plumbene since charge carriers will only travel through the plumbene layer. Biaxial strain is employed to explore the dependence of the electronic properties like bandgap and effective mass of the heterobilayer on applied strain. We find that applied biaxial compressive strain can induce switching from the semiconducting to metallic state of the material. In addition, we explore various optical characteristics of both pristine plumbene and plumbene/hBN. The optical properties of the heterobilayer signify its potential applications in solar cells as well as in UV photodetectors.
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Affiliation(s)
- Nishat Tasnim Hiramony
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology Dhaka 1205 Bangladesh +880-02-9668054 +880-19-3795-9083
| | - Tanshia Tahreen Tanisha
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology Dhaka 1205 Bangladesh +880-02-9668054 +880-19-3795-9083
| | - Sumaiya Jahan Tabassum
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology Dhaka 1205 Bangladesh +880-02-9668054 +880-19-3795-9083
| | - Samia Subrina
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology Dhaka 1205 Bangladesh +880-02-9668054 +880-19-3795-9083
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Is F, Mohanta MK, Sarkar AD. Insights into selected 2D piezo Rashba semiconductors for self-powered flexible piezo spintronics: material to contact properties. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:253001. [PMID: 36958043 DOI: 10.1088/1361-648x/acc70f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 03/23/2023] [Indexed: 06/18/2023]
Abstract
The new paradigm in electronics consists in realizing the seamless integration of many properties latent in nanomaterials, such as mechanical flexibility, strong spin-orbit coupling (Rashba spin splitting-RSS), and piezoelectricity. Taking cues from the pointers given on 1D ZnO nanowires (ACS Nano2018121811-20), the concept can be extended to multifunctional two-dimensional (2D) materials, which can serve as an ideal platform in next-generation electronics such as self-powered flexible piezo-spintronic device. However, a microscopically clear understanding reachable from the state-of-the-art density functional theory-based approaches is a prerequisite to advancing this research domain. Atomic-scale insights gained from meticulously performed scientific computations can firmly anchor the growth of this important research field, and that is of undeniable relevance from scientific and technological outlooks. This article reviews the scientific advance in understanding 2D materials hosting all the essential properties, i.e. flexibility, piezoelectricity, and RSS. Important 2D semiconducting monolayers that deserve a special mention, include monolayers of buckled MgX (X = S, Se, Te), CdTe, ZnTe, Janus structures of transition metal trichalcogenides, Janus tellurene and 2D perovskites. van Der Waals multilayers are also built to design multifunctional materials via modulation of the stacking sequence and interlayer coupling between the constituent layers. External electric field, strain engineering and charge doping are perturbations mainly used to tune the spintronic properties. Finally, the contact properties of these monolayers are also crucial for their actual implementation in electronic devices. The nature of the contacts, Schottky/Ohmic, needs to be carefully examined first as it controls the device's performance. In this regard, the rare occurrence of Ohmic contact in graphene/MgS van der Waals hetero bilayer has been presented in this review article.
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Affiliation(s)
- Fathima Is
- Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, Punjab 140306, India
| | - Manish Kumar Mohanta
- Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, Punjab 140306, India
| | - Abir De Sarkar
- Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, Punjab 140306, India
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Xu T, Jiang J. On the configuration of the graphene/carbon nanotube/graphene van der Waals heterostructure. Phys Chem Chem Phys 2023; 25:5066-5072. [PMID: 36723006 DOI: 10.1039/d2cp04797g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
The graphene/carbon nanotube/graphene (GCG) van der Waals heterostructure is a promising candidate for application in electronics and optical devices, for which the configuration and mechanical properties are of great importance. We perform molecular dynamics simulations to investigate the configuration of the GCG structure, which is successfully interpreted by the mechanic model based on the competition between the bending energy and the adhesion energy. It is found that the cross-section of the nanotube is compressed into an ellipse by the graphene layers, and the eccentricity increases with the increase of the nanotube's diameter. We obtain a concise expression for the relationship between the eccentricity and the nanotube's diameter. These findings shall be valuable for further studies on the physical and mechanical properties of the GCG structure.
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Affiliation(s)
- Tianyan Xu
- Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai Institute of Applied Mathematics and Mechanics, Shanghai Frontier Science Center of Mechanoinformatics, School of Mechanics and Engineering Science, Shanghai University, Shanghai 200072, People's Republic of China.
| | - Jinwu Jiang
- Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai Institute of Applied Mathematics and Mechanics, Shanghai Frontier Science Center of Mechanoinformatics, School of Mechanics and Engineering Science, Shanghai University, Shanghai 200072, People's Republic of China.
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Caglayan R, Guler HE, Mogulkoc Y. An analysis of Schottky barrier in silicene/Ga 2SeS heterostructures by employing electric field and strain. Phys Chem Chem Phys 2022; 24:10210-10221. [PMID: 35420606 DOI: 10.1039/d2cp00228k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Two-dimensional materials are leading the way in nanodevice applications thanks to their various advantages. Although two-dimensional materials show promise for many applications, they have certain limitations. In the last decade, the increasing demand for the applications of novel two-dimensional materials has accelerated heterostructure studies in this field. Hence, restoring the combination of two-dimensional heterostructured materials has been reported. In this paper, we show that the effect of the external electric field and biaxial strain on the silicene/Ga2SeS heterostructure has a critical impact on the tuning of the Schottky barrier height. The findings such as the variation of the electronic band gap, interlayer charge transfer, total dipole moment, and n-type/p-type Schottky barrier transitions of the silicene/Ga2SeS heterostructure under external effects imply that the device performance can be adjusted with Janus 2D materials.
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Affiliation(s)
- R Caglayan
- Department of Physics, Faculty of Science, Ankara University, 06100, Ankara, Turkey
| | - H E Guler
- Department of Physics, Faculty of Science, Ankara University, 06100, Ankara, Turkey
| | - Y Mogulkoc
- Department of Physics Engineering, Faculty of Engineering, Ankara University, 06100, Ankara, Turkey.
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de Vargas DD, Köhler MH, Baierle RJ. Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures. Phys Chem Chem Phys 2021; 23:17033-17040. [PMID: 34342330 DOI: 10.1039/d1cp02012a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
Single layers of hexagonal boron nitride (h-BN) and silicene are brought together to form h-BN/silicene van der Waals (vdW) heterostructures. The effects of external electric fields and compressive strain on their structural and electronic properties are systematically studied through first principles calculations. Two silicene phases are considered: the low-buckled Si(LB) and the dumbbell-like Si(DB). They show exciting new properties as compared to the isolated layers, such as a tunable band gap that depends on the interlayer distance and is dictated by the charge transfer and orbital hybridization between h-BN and silicene, especially in the case of Si(LB). The electric field also increases the band gap in h-BN/Si(DB) and causes an asymmetric charge rearrangement in h-BN/Si(LB). Remarkably, we found a great potential of h-BN layers to function as substrates for silicene, enhancing both the strain and electric field effects on its electronic properties. These results contribute to a more detailed understanding of h-BN/Si 2D-based materials, highlighting promising possibilities in low-dimensional electronics.
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Affiliation(s)
- Douglas D de Vargas
- Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, Brazil.
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Hassan MS, Islam MS, Park J. Silicene/ZnI 2van der Waals heterostructure: tunable structural and electronic properties. NANOTECHNOLOGY 2021; 32:305707. [PMID: 33878740 DOI: 10.1088/1361-6528/abf9c6] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2020] [Accepted: 04/19/2021] [Indexed: 06/12/2023]
Abstract
By utilizingab initiodensity functional theory, the structural and electronic properties of novel silicene/ZnI2heterobilayers (HBLs) were investigated. Constructing HBLs with ZnI2in different stacking configurations leads to direct bandgap opening of silicene at K point, which ranges from 138.2 to 201.2 meV. By analyzing the projected density of states and charge density distribution, we found that the predicted HBLs conserve the electronic properties of silicene and ZnI2can serve as a decent substrate. The tunability of electronic properties can be achieved by enforcing biaxial strain and by varying interlayer distance where bandgap can get as low as zero to as high as 318.8 meV and 290.7 meV, respectively depending on the stacking patterns. Maintenance of the remarkable features of silicene, high mobility of charge carriers, and fine-tuning of bandgap pave the way to construct new nanoelectronic devices using these novel silicene/ZnI2HBLs.
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Affiliation(s)
- Md Sakib Hassan
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
| | - Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, United States of America
- School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5, Canada
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Peng Z, Tao LQ, Zheng K, Ding Z, Huang Y, Yu J, Wang G, Chen X. A heterostructure of C3N/h-BN with effectively regulated electronic properties by E-field and strain. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.138461] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/22/2022]
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10
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Defects in Graphene/h-BN Planar Heterostructures: Insights into the Interfacial Thermal Transport Properties. NANOMATERIALS 2021; 11:nano11020500. [PMID: 33669409 PMCID: PMC7920450 DOI: 10.3390/nano11020500] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/20/2021] [Revised: 02/08/2021] [Accepted: 02/09/2021] [Indexed: 11/16/2022]
Abstract
In this work, the defects (local stress generated) induce the formation of graphene/h-BN planar heterostructure (Gr-hBN-PH) to form "unsteady structure". Then, the coupling effects of external field (heat flow direction, strain and temperature field) and internal field (defect number, geometry shape and interfacial configuration) on the interface thermal conductivity (ITC) of Gr-hBN-PH were studied. The results show phonon transmission is less affected by compression deformation under the action of force-heat-defect coupling, while phonon transmission of heterostructure is more affected by tensile deformation. The non-harmonic interaction of the atoms in the composite system is strengthened, causing the softening of high-frequency phonons. The greater reduction of thermal transport at the interface of heterostructures will be. The interface bonding morphology plays a significant role on the ITC of the Gr-hBN-PH. The relationship between structure and properties in the low dimension is analyzed from the perspective of defect energy. It is helpful for us to understand the physical mechanism of low-dimensional structure, realize multiple structural forms, and even explore new uses.
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Dakhlaoui H, Nefzi M, S Al-Shameri N, Al Suwaidan A, Elmobkey H, Almansour S, Alnaim I. Spin-polarized transmission across heterostructure based on an InAs/GaSb/InGaAs system: Effect of accelerating quantum wells. Chem Phys Lett 2020. [DOI: 10.1016/j.cplett.2020.137866] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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12
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Bafekry A, Akgenc B, Ghergherehchi M, Peeters FM. Strain and electric field tuning of semi-metallic character WCrCO 2MXenes with dual narrow band gap. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:355504. [PMID: 32348966 DOI: 10.1088/1361-648x/ab8e88] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2020] [Accepted: 04/29/2020] [Indexed: 06/11/2023]
Abstract
Motivated by the recent successful synthesis of double-M carbides, we investigate structural and electronic properties of WCrC and WCrCO2monolayers and the effects of biaxial and out-of-plane strain and electric field using density functional theory. WCrC and WCrCO2monolayers are found to be dynamically stable. WCrC is metallic and WCrCO2display semi-metallic character with narrow band gap, which can be controlled by strain engineering and electric field. WCrCO2monolayer exhibits a dual band gap which is preserved in the presence of an electric field. The band gap of WCrCO2monolayer increases under uniaxial strain while it becomes metallic under tensile strain, resulting in an exotic 2D double semi-metallic behavior. Our results demonstrate that WCrCO2is a new platform for the study of novel physical properties in two-dimensional Dirac materials and which may provide new opportunities to realize high-speed low-dissipation devices.
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Affiliation(s)
- A Bafekry
- Department of Physics, University of Guilan, 41335-1914 Rasht, Iran
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - B Akgenc
- Department of Physics, Kirklareli University, Kirklareli, Turkey
| | - M Ghergherehchi
- College of Electronic and Electrical Engineering, Sungkyun kwan University, Suwon, Korea
| | - F M Peeters
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
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Opoku F, Govender PP. Highly Selective and Sensitive Detection of Formaldehyde by β12-Borophene/SnO2 Heterostructures: The Role of an External Electric Field and In-Plain Biaxial Strain. J Phys Chem A 2020; 124:2288-2300. [DOI: 10.1021/acs.jpca.9b10670] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Francis Opoku
- Department of Chemical Sciences (Formerly Department of Applied Chemistry), University of Johannesburg, P.O. Box 17011, Doornfontein Campus, Johannesburg 2028, South Africa
| | - Penny P. Govender
- Department of Chemical Sciences (Formerly Department of Applied Chemistry), University of Johannesburg, P.O. Box 17011, Doornfontein Campus, Johannesburg 2028, South Africa
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An Y, Gong S, Hou Y, Li J, Wu R, Jiao Z, Wang T, Jiao J. MoB 2: a new multifunctional transition metal diboride monolayer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:055503. [PMID: 31618718 DOI: 10.1088/1361-648x/ab4e6e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Several layered transition metal borides can now be realized by a simple and general fabrication method (Fokwa et al 2018 Adv. Mater. 30 1704181), inspiring our interest to transition metal borides monolayer. Herein, we predict a new two-dimensional (2D) transition metal diboride MoB2 monolayer (ML) and study its intrinsic mechanical, thermal, electronic, and transport properties. The MoB2 ML has isotropic mechanic properties along the zigzag and armchair directions with a large Young's stiffness, and has an ultralow room-temperature thermal conductivity. The Mo atoms dominate the metallic nature of MoB2 ML. It shows an obvious electrical anisotropy and a current-limiting behavior. Our findings suggest that MoB2 ML is a promising multifunctional material used in ultrathin high-strength mechanical materials, heat insulating materials, electrical-anisotropy-based materials, and current limiters. It is helpful for the experimentalists to further prepare and utilize the transition metal diboride 2D materials.
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Affiliation(s)
- Yipeng An
- School of Physics and International United Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials, Henan Normal University, Xinxiang 453007, People's Republic of China. Department of Physics and Astronomy, University of California, Irvine, CA 92697, United States of America
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Li C, Xu Y, Sheng W, Yin WJ, Nie GZ, Ao Z. A promising blue phosphorene/C 2N van der Waals type-II heterojunction as a solar photocatalyst: a first-principles study. Phys Chem Chem Phys 2020; 22:615-623. [PMID: 31822873 DOI: 10.1039/c9cp05667j] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
An appropriate band structure and effective carrier separation are very important for the performance of a solar photocatalyst. In this paper, based on first-principles calculations, it was predicted that blue phosphorene (BlueP) and a C2N monolayer can form a promising metal-free type-II heterojunction. The electronic structure of the BlueP/C2N heterojunction facilitated the overall water splitting reactions well. The projected band structure showed that the conduction band edge was contributed by C2N and the valence band edge was dominated by BlueP. Under the combination of the driving force of the band offset and the built-in electric field between the two layers, the photo-generated electrons and holes were transferred spontaneously to the conduction band of C2N and the valence band of BlueP, respectively. An effective carrier separation in the heterostructure was thus achieved. More notably, the obtained light absorption of the BlueP/C2N junction showed an obvious red-shift, which greatly extended the area of light adsorption to the visible light region. We further proposed that strain could also be used to modulate the band gap and the band edge positions of the heterojunction. Our results not only provide a theoretical design, but also reveal the fundamental separation mechanism of the photo-generated carriers in the BlueP/C2N heterojunction.
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Affiliation(s)
- Chong Li
- School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China.
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Nguyen HT, Vu TV, Binh NT, Hoat D, Hieu NV, Anh NT, Nguyen CV, Phuc HV, Jappor HR, Obeid MM, Hieu NN. Strain-tunable electronic and optical properties of monolayer GeSe: Promising for photocatalytic water splitting applications. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2019.110543] [Citation(s) in RCA: 37] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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17
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Tang Y, Li H, Mao X, Xie J, Lee JY, Fu A. Bidirectional heterostructures consisting of graphene and lateral MoS 2/WS 2 composites: a first-principles study. RSC Adv 2019; 9:34986-34994. [PMID: 35530718 PMCID: PMC9074164 DOI: 10.1039/c9ra05692k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2019] [Accepted: 10/20/2019] [Indexed: 11/21/2022] Open
Abstract
First-principles calculations have been performed to explore the structural and electronic properties of bidirectional heterostructures composed of graphene and (MoS2) X /(WS2)4-X (X = 1, 2, 3) lateral composites and compare them with those of heterobilayers formed by graphene and pristine MS2 (M = Mo, W). The band gaps of the lateral heterostructures lie between those of pristine MoS2 and WS2. The weak coupling between the two layers can induce a tiny band-gap opening of graphene and formation of an n-type Schottky contact at the G-(MoS2) X /(WS2)4-X interface. Moreover, the combination ratio of MoS2/WS2 can control the electronic properties of G-(MoS2) X /(WS2)4-X . By applying external electric fields, the band gaps of (MoS2) X /(WS2)4-X (X = 0, 1, 2, 3, 4) monolayers undergo a direct-indirect transition, and semiconductor-metal transitions can be found in WS2. External electric fields can also be used effectively to tune the binding energies, charge transfers, and band structures (the types of Schottky and Ohmic contacts) of G-(MoS2) X /(WS2)4-X heterostructures. These findings suggest that G-(MoS2) X /(WS2)4-X heterostructures can serve as high-performance nano-electronic devices.
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Affiliation(s)
- Yingqi Tang
- College of Chemistry and Chemical Engineering, State Key Laboratory of Bio-Fibers and Eco-Textiles, Qingdao University Qingdao 266071 China +86-531-85950768 +86-532-85950767
| | - Hao Li
- Department of Chemistry, Sungkyunkwan University Suwon 16419 Korea +82-031-290-7075 +82-031-299-4560
| | - Xiaotong Mao
- College of Chemistry and Chemical Engineering, State Key Laboratory of Bio-Fibers and Eco-Textiles, Qingdao University Qingdao 266071 China +86-531-85950768 +86-532-85950767
| | - Ju Xie
- College of Chemistry and Chemical Engineering, Yangzhou University Yangzhou 225002 China
| | - Jin Yong Lee
- Department of Chemistry, Sungkyunkwan University Suwon 16419 Korea +82-031-290-7075 +82-031-299-4560
| | - Aiping Fu
- College of Chemistry and Chemical Engineering, State Key Laboratory of Bio-Fibers and Eco-Textiles, Qingdao University Qingdao 266071 China +86-531-85950768 +86-532-85950767
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18
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Pham KD, Vi VT, Thuan DV, Hieu NV, Nguyen CV, Phuc HV, Hoi BD, Phuong LT, Cuong NQ, Lu DV, Hieu NN. Tuning the electronic properties of GaS monolayer by strain engineering and electric field. Chem Phys 2019. [DOI: 10.1016/j.chemphys.2019.05.008] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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19
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Long X, Li X, Wei X, Cao J. Electronic properties of h-BN/g-C2N van der Waals heterojunction: A first-principles calculation. Chem Phys Lett 2019. [DOI: 10.1016/j.cplett.2019.04.009] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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20
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21
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Masihi A, Naseri M, Fatahi N. A first-principles study of the electronic and optical properties of monolayer α-PbO. Chem Phys Lett 2019. [DOI: 10.1016/j.cplett.2019.02.022] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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22
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Durajski AP, Skoczylas KM, Szcze Combining Cedilla Śniak R. Superconductivity in bilayer graphene intercalated with alkali and alkaline earth metals. Phys Chem Chem Phys 2019; 21:5925-5931. [PMID: 30785457 DOI: 10.1039/c9cp00176j] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Abstract
With the enormous research activity focused on graphene in recent years, it is not surprising that graphene superconductivity has become an attractive area of research. To date, no superconducting properties have been experimentally observed in the pristine form of graphene but controllable structure manipulation is a promising way to induce a superconducting state in graphene-based systems. Therefore, herein we investigate the possible superconductivity in two-layer graphene intercalated with atoms of alkali and alkaline earth metals. Results of our calculations conducted within the framework of density functional theory combined with the Eliashberg theory allow us to conclude that the Cooper pairing in these superconductors can be described in a standard phonon-mediated scenario. In this regime, C6XC6 (X = K, Ca, Rb and Sr) are expected to be superconductors with estimated superconducting critical temperatures of 5.47-14.56 K and with the ratios of energy gap to transition temperature exceeding the value predicted by the Bardeen-Cooper-Schrieffer theory.
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Affiliation(s)
- Artur P Durajski
- Institute of Physics, Cze[combining cedilla]stochowa University of Technology, Ave. Armii Krajowej 19, 42-200 Cze[combining cedilla]stochowa, Poland.
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23
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Vu TV, Hieu NV, Thao LTP, Hieu NN, Phuc HV, Bui HD, Idrees M, Amin B, Duc LM, Nguyen CV. Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet. Phys Chem Chem Phys 2019; 21:22140-22148. [DOI: 10.1039/c9cp04689e] [Citation(s) in RCA: 36] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.
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Affiliation(s)
- Tuan V. Vu
- Division of Computational Physics
- Institute for Computational Science
- Ton Duc Thang University
- Ho Chi Minh City
- Vietnam
| | - Nguyen V. Hieu
- Department of Physics
- University of Education
- The University of Da Nang
- Vietnam
| | - Le T. P. Thao
- Department of Physics
- University of Education
- The University of Da Nang
- Vietnam
| | - Nguyen N. Hieu
- Institute of Research and Development, Duy Tan University
- Vietnam
| | - Huynh V. Phuc
- Division of Theoretical Physics
- Dong Thap University
- Cao Lanh 870000
- Vietnam
| | - H. D. Bui
- Institute of Research and Development, Duy Tan University
- Vietnam
| | - M. Idrees
- Department of Physics
- Hazara University
- Mansehra 21300
- Pakistan
| | - B. Amin
- Department of Physics
- Abbottabad University of Science and Technology
- Abbottabad 22010
- Pakistan
| | - Le M. Duc
- Department of Materials Science and Engineering
- Le Quy Don Technical University
- Ha Noi 100000
- Vietnam
| | - Chuong V. Nguyen
- Department of Materials Science and Engineering
- Le Quy Don Technical University
- Ha Noi 100000
- Vietnam
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24
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Vu TV, Tong HD, Tran DP, Binh NTT, Nguyen CV, Phuc HV, Do HM, Hieu NN. Electronic and optical properties of Janus ZrSSe by density functional theory. RSC Adv 2019; 9:41058-41065. [PMID: 35540071 PMCID: PMC9076358 DOI: 10.1039/c9ra08605f] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/21/2019] [Accepted: 11/28/2019] [Indexed: 11/29/2022] Open
Abstract
In the present work, we investigate systematically the electronic and optical properties of Janus ZrSSe using first-principles calculations. Our calculations demonstrate that the Janus ZrSSe monolayer is an indirect semiconductor at equilibrium. The band gap of the Janus ZrSSe is 1.341 eV using the Heyd–Scuseria–Ernzerhof hybrid functional, larger than the band gap of ZrSe2 monolayer and smaller than that of ZrS2 monolayer. Based on the analysis of the band edge alignment, we confirm that the Janus ZrSSe monolayer possesses photocatalytic activities that can be used in water splitting applications. While strain engineering plays an important role in modulating the electronic properties and optical characteristics of the Janus ZrSSe monolayer, the influence of the external electric field on these properties is negligible. The biaxial strain, εb, has significantly changed the band of the Janus ZrSSe monolayer, and particularly, the semiconductor–metal phase transition which occurred at εb = 7%. The Janus ZrSSe monolayer can absorb light in both visible and ultraviolet regions. Also, the biaxial strain has shifted the first optical gap of the Janus ZrSSe monolayer. Our findings provide additional information for the prospect of applying the Janus ZrSSe monolayer in nanoelectronic devices, especially in water splitting technology. In the present work, we investigate systematically the electronic and optical properties of Janus ZrSSe using first-principles calculations.![]()
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Affiliation(s)
- Tuan V. Vu
- Division of Computational Physics
- Institute for Computational Science
- Ton Duc Thang University
- Ho Chi Minh City
- Viet Nam
| | - Hien D. Tong
- Faculty of Engineering
- Vietnamese-German University
- Binh Duong
- Viet Nam
| | - Duy Phu Tran
- Future Industries Institute
- ARC Centre of Excellence in Convergent Bio-Nano Science and Technology
- University of South Australia
- Australia
| | - Nguyen T. T. Binh
- Institute of Research and Development
- Duy Tan University
- Da Nang 550000
- Viet Nam
| | - Chuong V. Nguyen
- Department of Materials Science and Engineering
- Le Quy Don Technical University
- Ha Noi 100000
- Viet Nam
| | - Huynh V. Phuc
- Division of Theoretical Physics
- Dong Thap University
- Dong Thap
- Viet Nam
| | - Hoat M. Do
- Computational Laboratory for Advanced Materials and Structures
- Advanced Institute of Materials Science
- Ton Duc Thang University
- Ho Chi Minh City
- Viet Nam
| | - Nguyen N. Hieu
- Institute of Research and Development
- Duy Tan University
- Da Nang 550000
- Viet Nam
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25
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Shu H, Wang Y, Sun M. Enhancing electronic and optical properties of monolayer MoSe2via a MoSe2/blue phosphorene heterobilayer. Phys Chem Chem Phys 2019; 21:15760-15766. [DOI: 10.1039/c9cp02743b] [Citation(s) in RCA: 46] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
Type-II heterostructures are appealing for application in optoelectronics due to their effective separation of photogenerated charge carriers.
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Affiliation(s)
- Huabing Shu
- School of Science
- Jiangsu University of Science and Technology
- Zhenjiang 212001
- China
| | - Ying Wang
- School of Science
- Jiangsu University of Science and Technology
- Zhenjiang 212001
- China
| | - Minglei Sun
- School of Mechanical Engineering
- Southeast University
- Nanjing 211189
- China
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26
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Deng Z, Wang X. Strain engineering on the electronic states of two-dimensional GaN/graphene heterostructure. RSC Adv 2019; 9:26024-26029. [PMID: 35531004 PMCID: PMC9070312 DOI: 10.1039/c9ra03175h] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2019] [Accepted: 08/05/2019] [Indexed: 11/21/2022] Open
Abstract
Combining two different layered structures to form a van der Waals (vdW) heterostructure has recently emerged as an intriguing way of designing electronic and optoelectronic devices. Effects of the strain on the electronic properties of GaN/graphene heterostructure are investigated by using first-principles calculation. In the GaN/graphene heterostructure, the strain can control not only the Schottky barrier, but also contact types at the interface. Moreover, when the uniaxial strain is above −1% or the biaxial strain is above 0%, the contact type transforms to ohmic contact. These results provide a detailed understanding of the interfacial properties of GaN/graphene and help to predict the performance of the GaN/graphene heterostructure on nanoelectronics and nanocomposites. Combining two different layered structures to form a van der Waals (vdW) heterostructure has recently emerged as an intriguing way of designing electronic and optoelectronic devices.![]()
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Affiliation(s)
- Zhongxun Deng
- Shanxi Province Key Laboratory of Electrical Materials and Infiltration Technology
- School of Materials Science and Engineering
- Xi'an University of Technology
- Xi'an 710048
- P. R. China
| | - Xianhui Wang
- Shanxi Province Key Laboratory of Electrical Materials and Infiltration Technology
- School of Materials Science and Engineering
- Xi'an University of Technology
- Xi'an 710048
- P. R. China
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27
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Idrees M, Din HU, Ali R, Rehman G, Hussain T, Nguyen CV, Ahmad I, Amin B. Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures. Phys Chem Chem Phys 2019; 21:18612-18621. [DOI: 10.1039/c9cp02648g] [Citation(s) in RCA: 99] [Impact Index Per Article: 19.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023]
Abstract
Janus monolayers and their van der Waals heterostuctures are investigated by hybrid density functional theory calculations.
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Affiliation(s)
- M. Idrees
- Department of Physics
- Hazara University
- Mansehra 21300
- Pakistan
| | - H. U. Din
- Department of Physics
- Hazara University
- Mansehra 21300
- Pakistan
| | - R. Ali
- The Guo China-US Photonics Laboratory
- Changchun Institute of Optics
- Fine Mechanics and Physics Chinese Academy of Sciences
- Changchun 130033
- P. R. China
| | - G. Rehman
- Department of Physics
- University of Malakand
- Chakdara
- Pakistan
| | - T. Hussain
- School of Molecular Sciences
- The University of Western Australia
- Perth
- Australia
| | - C. V. Nguyen
- Institute of Research and Development
- Duy Tan University
- Vietnam
| | - Iftikhar Ahmad
- Department of Physics
- University of Malakand
- Chakdara
- Pakistan
- Department of Physics
| | - B. Amin
- Department of Physics
- Abbottabad University of Science and Technology
- Abbottabad 22010
- Pakistan
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