Growth, sintering, and chemical states of Co supported on reducible CeO2(111) thin films: The effects of the metal coverage and the nature of the support

The growth, sintering, and interaction of cobalt with ceria were studied under ultrahigh vacuum conditions by vapor-deposition of Co onto well-defined CeO_x(111) (1.5 < x < 2) thin films grown on Ru(0001). Charge transfer from Co to ceria occurs upon deposition of Co on CeO_1.96 and partially reduced CeO_1.83 at 300 K. X-ray photoelectron spectroscopy studies show that Co is oxidized to Co²⁺ species at the cost of the reduction of Ce⁴⁺ to Ce³⁺, at a lesser extent on reduced ceria. Co²⁺ is the predominant species on CeO_1.96 at low Co coverages (e.g., ≤0.20 ML). The ratio of metallic Co/Co²⁺ increases with the increase in the Co coverage. However, both metallic Co and Co²⁺ species are present on CeO_1.83 even at low Co coverages with metallic Co as the major species. Scanning tunneling microscopy results demonstrate that Co tends to wet the CeO_1.96 surface at very low Co coverages at room temperature forming one-atomic layer high structures of Co-O-Ce. The increase in the Co coverage can cause the particle growth into three-dimensional structures. The formation of slightly flatter Co particles was observed on reduced CeO_1.83. In comparison with other transition metals including Ni, Rh, Pt, and Au, our studies demonstrate that Co on ceria exhibits a smaller particle size and higher thermal stability, likely arising from strong metal-support interactions. The formed particles upon Co deposition at 300 K are present on the ceria surface after heating to 1000 K. The Co-ceria interface can be tuned by varying the Co metal coverage, the annealing temperature, and the nature of the ceria surface.