Giant resistive switching in mixed phase BiFeO3via phase population control

Dynamical Multiferroicity and Magnetic Topological Structures Induced by the Orbital Angular Momentum of Light in a Nonmagnetic Material

Recent studies have revealed that chiral phonons resonantly excited by ultrafast laser pulses carry magnetic moments and can enhance the magnetization of materials. In this work, using first-principles-based simulations, we present a real-space scenario where circular motions of electric dipoles in ultrathin two-dimensional ferroelectric and nonmagnetic films are driven by orbital angular momentum of light via strong coupling between electric dipoles and optical field. Rotations of these dipoles follow the evolving pattern of the optical field and create strong on-site orbital magnetic moments of ions. By characterizing topology of orbital magnetic moments in each 2D layer, we identify the vortex type of topological texture-magnetic merons with a one-half topological charge and robust stability. Our study thus provides alternative approaches for generating magnetic fields and topological textures from light-matter interaction and dynamical multiferroicity in nonmagnetic materials.

Spherical ferroelectric solitons

Spherical ferroelectric domains, such as electrical bubbles, polar skyrmion bubbles and hopfions, share a single and unique feature-their homogeneously polarized cores are surrounded by a vortex ring of polarization whose outer shells form a spherical domain boundary. The resulting polar texture, typical of three-dimensional topological solitons, has an entirely new local symmetry characterized by a high polarization and strain gradients. Consequently, spherical domains represent a different material system of their own with emergent properties drastically different from that of their surrounding medium. Examples of new functionalities inherent to spherical domains include chirality, optical response, negative capacitance and giant electromechanical response. These characteristics, particularly given that the domains naturally have an ultrafine scale, offer new opportunities in high-density and low-energy nanoelectronic technologies. This Perspective gives an insight into the complex polar structure and physical origin of these spherical domains, which facilitates the understanding and development of spherical domains for device applications.

Non-volatile electric-field control of inversion symmetry

Competition between ground states at phase boundaries can lead to significant changes in properties under stimuli, particularly when these ground states have different crystal symmetries. A key challenge is to stabilize and control the coexistence of symmetry-distinct phases. Using BiFeO₃ layers confined between layers of dielectric TbScO₃ as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BiFeO₃ phases at room temperature with antipolar, insulating and polar semiconducting behaviour, respectively. Application of orthogonal in-plane electric (polar) fields results in reversible non-volatile interconversion between the two phases, hence removing and introducing centrosymmetry. Counterintuitively, we find that an electric field 'erases' polarization, resulting from the anisotropy in octahedral tilts introduced by the interweaving TbScO₃ layers. Consequently, this interconversion between centrosymmetric and non-centrosymmetric phases generates changes in the non-linear optical response of over three orders of magnitude, resistivity of over five orders of magnitude and control of microscopic polar order. Our work establishes a platform for cross-functional devices that take advantage of changes in optical, electrical and ferroic responses, and demonstrates octahedral tilts as an important order parameter in materials interface design.

High-density switchable skyrmion-like polar nanodomains integrated on silicon

Topological domains in ferroelectrics^1-5 have received much attention recently owing to their novel functionalities and potential applications^6,7 in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limits their applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polar texture, which substantially modifies their resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides.

Elastic distortion determining conduction in BiFeO3 phase boundaries

It is now well-established that boundaries separating tetragonal-like (T) and rhombohedral-like (R) phases in BiFeO₃ thin films can show enhanced electrical conductivity. However, the origin of this conductivity remains elusive. Here, we study mixed-phase BiFeO₃ thin films, where local populations of T and R can be readily altered using stress and electric fields. We observe that phase boundary electrical conductivity in regions which have undergone stress-writing is significantly greater than in the virgin microstructure. We use high-end electron microscopy techniques to identify key differences between the R–T boundaries present in stress-written and as-grown microstructures, to gain a better understanding of the mechanism responsible for electrical conduction. We find that point defects (and associated mixed valence states) are present in both electrically conducting and non-conducting regions; crucially, in both cases, the spatial distribution of defects is relatively homogeneous: there is no evidence of phase boundary defect aggregation. Atomic resolution imaging reveals that the only significant difference between non-conducting and conducting boundaries is the elastic distortion evident – detailed analysis of localised crystallography shows that the strain accommodation across the R–T boundaries is much more extensive in stress-written than in as-grown microstructures; this has a substantial effect on the straightening of local bonds within regions seen to electrically conduct. This work therefore offers distinct evidence that the elastic distortion is more important than point defect accumulation in determining the phase boundary conduction properties in mixed-phase BiFeO₃.

The localized crystallography of conducting and non-conducting phase boundaries in mixed-phase BiFeO₃ is directly compared using scanning transmission electron microscopy techniques.