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Bachu S, Kowalik M, Huet B, Nayir N, Dwivedi S, Hickey DR, Qian C, Snyder DW, Rotkin SV, Redwing JM, van Duin ACT, Alem N. Role of Bilayer Graphene Microstructure on the Nucleation of WSe 2 Overlayers. ACS NANO 2023. [PMID: 37368885 DOI: 10.1021/acsnano.2c12621] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
Over the past few years, graphene grown by chemical vapor deposition (CVD) has gained prominence as a template to grow transition metal dichalcogenide (TMD) overlayers. The resulting two-dimensional (2D) TMD/graphene vertical heterostructures are attractive for optoelectronic and energy applications. However, the effects of the microstructural heterogeneities of graphene grown by CVD on the growth of the TMD overlayers are relatively unknown. Here, we present a detailed investigation of how the stacking order and twist angle of CVD graphene influence the nucleation of WSe2 triangular crystals. Through the combination of experiments and theory, we correlate the presence of interlayer dislocations in bilayer graphene with how WSe2 nucleates, in agreement with the observation of a higher nucleation density of WSe2 on top of Bernal-stacked bilayer graphene versus twisted bilayer graphene. Scanning/transmission electron microscopy (S/TEM) data show that interlayer dislocations are present only in Bernal-stacked bilayer graphene but not in twisted bilayer graphene. Atomistic ReaxFF reactive force field molecular dynamics simulations reveal that strain relaxation promotes the formation of these interlayer dislocations with localized buckling in Bernal-stacked bilayer graphene, whereas the strain becomes distributed in twisted bilayer graphene. Furthermore, these localized buckles in graphene are predicted to serve as thermodynamically favorable sites for binding WSex molecules, leading to the higher nucleation density of WSe2 on Bernal-stacked graphene. Overall, this study explores synthesis-structure correlations in the WSe2/graphene vertical heterostructure system toward the site-selective synthesis of TMDs by controlling the structural attributes of the graphene substrate.
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Affiliation(s)
- Saiphaneendra Bachu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Malgorzata Kowalik
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Benjamin Huet
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Applied Research Laboratory (ARL), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nadire Nayir
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Karamanoglu Mehmetbey University, Karaman, Turkey 7000
| | - Swarit Dwivedi
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Danielle Reifsnyder Hickey
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Chenhao Qian
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - David W Snyder
- Applied Research Laboratory (ARL), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Slava V Rotkin
- Materials Research Institute and Department of Engineering Science & Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Adri C T van Duin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nasim Alem
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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Fan L, Xu J, Hong Y. Defects in graphene-based heterostructures: topological and geometrical effects. RSC Adv 2022; 12:6772-6782. [PMID: 35424609 PMCID: PMC8982235 DOI: 10.1039/d1ra08884j] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2021] [Accepted: 01/31/2022] [Indexed: 12/25/2022] Open
Abstract
The combination of graphene (Gr) and graphene-like materials provides the possibility of using two-dimensional (2D) atomic layer building blocks to create unprecedented architectures. The most attractive characteristics are strongly dependent on the various spatial structures, mainly including in-plane heterostructures butt-joined at the side of an atomic monolayer through covalent bonds, van der Waals (vdW) heterostructures involving a vertically stacked hybrid structure, and their combinations. Heterostructures can not only overcome the limitations inherent to each material but may also obtain new features by appropriate material combination. However, heterostructures made of vdW force superposition or covalent bond splicing are prone to defects. The introduction of external and internal defects causes local deformation and stress in the material, thereby affecting the physical properties of the material, such as its transport properties and mechanical properties. Therefore, research, utilization and control of these defects are highly critical. This paper reviews the vacancy, topological and geometrical effects of defects in modulating the structures and mechanical responses of Gr-based heterostructures. Moreover, the coupling effects of various defects on the Gr-based heterostructures in multi-physics fields are also discussed. This work aims to improve the understanding of the physical mechanism of defective configurations and their association in low dimensions, so as to realize various configurations and to aid the search for new usages. The combination of graphene (Gr) and graphene-like materials provides the possibility of using two-dimensional (2D) atomic layer building blocks to create unprecedented architectures.![]()
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Affiliation(s)
- Lei Fan
- School of Civil Engineering and Architecture, Zhejiang University of Science & Technology, Hangzhou, PR China
| | - Jin Xu
- School of Civil Engineering and Architecture, Zhejiang University of Science & Technology, Hangzhou, PR China
| | - Yihong Hong
- Shanghai Urban Construction Vocational College, Shanghai, China
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Wu X, Zhu X. Molecular dynamics simulations of ion beam irradiation on graphene/MoS 2 heterostructure. Sci Rep 2021; 11:21113. [PMID: 34702934 PMCID: PMC8548316 DOI: 10.1038/s41598-021-00582-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2021] [Accepted: 10/11/2021] [Indexed: 11/16/2022] Open
Abstract
The interaction between ion irradiation and two-dimensional (2D) heterostructures is important for the performance modulation and application realization, while few studies have been reported. This paper investigates the influence of Ar ion irradiation on graphene/MoS2 heterostructure by using molecular dynamics (MD) simulations. The generation of defects is studied at first by considering the influence factors (i.e., irradiation energy, dose, stacking order, and substrate). Then uniaxial tensile test simulations are conducted to uncover the evolution of the mechanical performance of graphene/MoS2 heterostructure after being irradiated by ions. At last, the control rule of interlayer distance in graphene/MoS2 heterostructure by ion irradiation is illustrated for the actual applications. This study could provide important guidance for future application in tuning the performance of graphene/MoS2 heterostructure-based devices by ion beam irradiation.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-Sen University, Zhuhai, 519082, Guangdong, China.
| | - Xiaobao Zhu
- School of Software, Nanchang Hangkong University, Nanchang, 330063, Jiangxi, China.
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Kim JH, Kim S, Park SO, Jung GY, Song S, Sohn A, Kim S, Kwak SK, Kwon S, Lee Z. Antiphase Boundaries as Faceted Metallic Wires in 2D Transition Metal Dichalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2000788. [PMID: 32775161 PMCID: PMC7404160 DOI: 10.1002/advs.202000788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2020] [Revised: 03/26/2020] [Indexed: 06/11/2023]
Abstract
Antiphase boundaries (APBs) in 2D transition metal dichalcogenides have attracted wide interest as 1D metallic wires embedded in a semiconducting matrix, which could be exploited in fully 2D-integrated circuits. Here, the anisotropic morphologies of APBs (i.e., linear and saw-toothed APBs) in the nanoscale are investigated. The experimental and computational results show that despite their anisotropic nanoscale morphologies, all APBs adopt a predominantly chalcogen-oriented dense structure to maintain the energetically most stable atomic configuration. Moreover, the effect of the nanoscale morphology of an APB on electron transport from two-probe field effect transistor measurements is investigated. A saw-toothed APB has a considerably lower electron mobility than a linear APB, indicating that kinks between facets are the main factors of scattering. The observations contribute to the systematical understanding of the faceted APBs and its impact on electrical transport behavior and it could potentially extend the applications of 2D materials through defect engineering to achieve the desired properties.
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Affiliation(s)
- Jung Hwa Kim
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science (IBS)Ulsan44919Republic of Korea
| | - Se‐Yang Kim
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Sung O. Park
- Department of Energy EngineeringSchool of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Gwan Yeong Jung
- Department of Energy EngineeringSchool of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Seunguk Song
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Ahrum Sohn
- School of Advanced Materials Science and EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Sang‐Woo Kim
- School of Advanced Materials Science and EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Sang Kyu Kwak
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science (IBS)Ulsan44919Republic of Korea
- Department of Energy EngineeringSchool of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Soon‐Yong Kwon
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Zonghoon Lee
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science (IBS)Ulsan44919Republic of Korea
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Liu H, Wang C, Zuo Z, Liu D, Luo J. Direct Visualization of Exciton Transport in Defective Few-Layer WS 2 by Ultrafast Microscopy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1906540. [PMID: 31773833 DOI: 10.1002/adma.201906540] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2019] [Revised: 11/03/2019] [Indexed: 06/10/2023]
Abstract
As defects usually limit the exciton diffusion in 2D transition metal dichalcogenides (TMDCs), the interaction knowledge of defects and exciton transport is crucial for achieving efficient TMDC-based devices. A direct visualization of defect-modulated exciton transport is developed in few-layer WS2 by ultrafast transient absorption microscopy. Atomic-scale defects are introduced by argon plasma treatment and identified by aberration-corrected scanning transmission electron microscopy. Neutral excitons can be captured by defects to form bound excitons in 7.75-17.88 ps, which provide a nonradiative relaxation channel, leading to decreased exciton lifetime and diffusion coefficient. The exciton diffusion length of defective sample has a drastic reduction from 349.44 to 107.40 nm. These spatially and temporally resolved measurements reveal the interaction mechanism between defects and exciton transport dynamics in 2D TMDCs, giving a guideline for designing high-performance TMDC-based devices.
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Affiliation(s)
- Huan Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, P. R. China
| | - Chong Wang
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, P. R. China
| | - Zhengguang Zuo
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, P. R. China
| | - Dameng Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, P. R. China
| | - Jianbin Luo
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, P. R. China
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Kim JH, Kim SY, Cho Y, Park HJ, Shin HJ, Kwon SY, Lee Z. Interface-Driven Partial Dislocation Formation in 2D Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807486. [PMID: 30785234 DOI: 10.1002/adma.201807486] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2018] [Revised: 01/18/2019] [Indexed: 06/09/2023]
Abstract
Van der Waals (vdW) epitaxy allows the fabrication of various heterostructures with dramatically released lattice matching conditions. This study demonstrates interface-driven stacking boundaries in WS2 using epitaxially grown tungsten disulfide (WS2 ) on wrinkled graphene. Graphene wrinkles function as highly reactive nucleation sites on WS2 epilayers; however, they impede lateral growth and induce additional stress in the epilayer due to anisotropic friction. Moreover, partial dislocation-driven in-plane strain facilitates out-of-plane buckling with a height of 1 nm to release in-plane strain. Remarkably, in-plane strain relaxation at partial dislocations restores the bandgap to that of monolayer WS2 due to reduced interlayer interaction. These findings clarify significant substrate morphology effects even in vdW epitaxy and are potentially useful for various applications involving modifying optical and electronic properties by manipulating extended 1D defects via substrate morphology control.
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Affiliation(s)
- Jung Hwa Kim
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Se-Yang Kim
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Yeonchoo Cho
- Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea
| | - Hyo Ju Park
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Hyeon-Jin Shin
- Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea
| | - Soon-Yong Kwon
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Zonghoon Lee
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
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