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Panda J, Sahu S, Haider G, Thakur MK, Mosina K, Velický M, Vejpravova J, Sofer Z, Kalbáč M. Polarization-Resolved Position-Sensitive Self-Powered Binary Photodetection in Multilayer Janus CrSBr. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1033-1043. [PMID: 38147583 PMCID: PMC10788859 DOI: 10.1021/acsami.3c13552] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 12/10/2023] [Accepted: 12/10/2023] [Indexed: 12/28/2023]
Abstract
Recent progress in polarization-resolved photodetection based on low-symmetry 2D materials has formed the basis of cutting-edge optoelectronic devices, including quantum optical communication, 3D image processing, and sensing applications. Here, we report an optical polarization-resolving photodetector (PD) fabricated from multilayer semiconducting CrSBr single crystals with high structural anisotropy. We have demonstrated self-powered photodetection due to the formation of Schottky junctions at the Au-CrSBr interfaces, which also caused the photocurrent to display a position-sensitive and binary nature. The self-biased CrSBr PD showed a photoresponsivity of ∼0.26 mA/W with a detectivity of 3.4 × 108 Jones at 514 nm excitation of fluency (0.42 mW/cm2) under ambient conditions. The optical polarization-induced photoresponse exhibits a large dichroic ratio of 3.4, while the polarization is set along the a- and the b-axes of single-crystalline CrSBr. The PD also showed excellent stability, retaining >95% of the initial photoresponsivity in ambient conditions for more than five months without encapsulation. Thus, we demonstrate CrSBr as a fascinating material for ultralow-powered optical polarization-resolving optoelectronic devices for cutting-edge technology.
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Affiliation(s)
- Jaganandha Panda
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Satyam Sahu
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
- Department
of Biophysics, Chemical and Macromolecular Physics, Faculty of Mathematics
and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2, Czech Republic
| | - Golam Haider
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Mukesh Kumar Thakur
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Kseniia Mosina
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Matěj Velický
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Jana Vejpravova
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic
| | - Zdeněk Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Martin Kalbáč
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
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2
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Paul Inbaraj CR, Mathew RJ, Ulaganathan RK, Sankar R, Kataria M, Lin HY, Chen YT, Hofmann M, Lee CH, Chen YF. A Bi-Anti-Ambipolar Field Effect Transistor. ACS NANO 2021; 15:8686-8693. [PMID: 33970616 DOI: 10.1021/acsnano.1c00762] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.
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Affiliation(s)
- Christy Roshini Paul Inbaraj
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano-science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Roshan Jesus Mathew
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano-science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | | | - Raman Sankar
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Monika Kataria
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | - Hsia Yu Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Yit-Tsong Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Hao Lee
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Centre for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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Paul Inbaraj CR, Mathew RJ, Ulaganathan RK, Sankar R, Kataria M, Lin HY, Cheng HY, Lin KH, Lin HI, Liao YM, Chou FC, Chen YT, Lee CH, Chen YF. Modulating Charge Separation with Hexagonal Boron Nitride Mediation in Vertical Van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2020; 12:26213-26221. [PMID: 32400164 DOI: 10.1021/acsami.0c06077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Tuning the optical and electrical properties by stacking different layers of two-dimensional (2D) materials enables us to create unusual physical phenomena. Here, we demonstrate an alternative approach to enhance charge separation and alter physical properties in van der Waals heterojunctions with type-II band alignment by using thin dielectric spacers. To illustrate our working principle, we implement a hexagonal boron nitride (h-BN) sieve layer in between an InSe/GeS heterojunction. The optical transitions at the junctions studied by photoluminescence and the ultrafast pump-probe technique show quenching of emission without h-BN layers exhibiting an indirect recombination process. This quenching effect due to strong interlayer coupling was confirmed with Raman spectroscopic studies. In contrast, h-BN layers in between InSe and GeS show strong enhancement in emission, giving another degree of freedom to tune the heterojunction property. The two-terminal photoresponse study supports the argument by showing a large photocurrent density for an InSe/h-BN/GeS device by avoiding interlayer charge recombination. The enhanced charge separation with h-BN mediation manifests a photoresponsivity and detectivity of 9 × 102 A W-1 and 3.4 × 1014 Jones, respectively. Moreover, a photogain of 1.7 × 103 shows a high detection of electrons for the incident photons. Interestingly, the photovoltaic short-circuit current is switched from positive to negative, whereas the open-circuit voltage changes from negative to positive. Our proposed enhancement of charge separation with 2D-insulator mediation, therefore, provides a useful route to manipulate the physical properties of heterostructures and for the future development of high-performance optoelectronic devices.
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Affiliation(s)
- Christy Roshini Paul Inbaraj
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Roshan Jesus Mathew
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | | | - Raman Sankar
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Monika Kataria
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Physics, National Central University, Chung-Li 320, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Advanced Research Centre for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Hsia Yu Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Hao-Yu Cheng
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Kung-Hsuan Lin
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Hung-I Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Yu-Ming Liao
- Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Fang Cheng Chou
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Yit-Tsong Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Hao Lee
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Centre for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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Yu H, Lian Y, Sun T, Yang X, Wang Y, Xie G, Du X, Gou J, Li W, Tai H. Two-Sided Topological Architecture on a Monolithic Flexible Substrate for Ultrasensitive Strain Sensors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:43543-43552. [PMID: 31657198 DOI: 10.1021/acsami.9b14476] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Flexible ultrasensitive strain sensors are highly desirable in view of their widespread applications in wearable electronics, health monitoring systems, and smart robots, where subtle strain detection is required. However, traditional fabrication of such sensors was done to prepare sensitive layers on bare or single-sided structural substrates, leading to limited sensitivity. Herein, a stretchable resistive-type strain sensor was demonstrated by self-assembling conductive networks onto a monolithic polydimethylsiloxane substrate with a two-sided topological design, for example, a sinusoid/auxetic binary architecture. The sensitivity of the obtained sensor was greatly improved by 22-fold as compared to the traditional counterpart with a bare substrate. The remarkably good agreement between the experimental results and finite element analysis predictions confirmed that the superior sensitivity is a synergistic effect of local strain enhancement derived from the topological structure on the foreside and an additional strain concentration and a reduced Poisson's ratio from the auxetic arrays on the backside. Furthermore, this sensor can withstand an extreme mechanical force (>750 N) because of the shear stiffening characteristic of the auxetic structure. Benefiting from the characteristics of ultrahigh sensitivity (gauge factor ∼1744 at 5%), low detection limit (<0.05%), and long-term durability (>500 loading cycles), this as-prepared sensor shows promise in practical applications of high-performance wearable electronics.
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Affiliation(s)
- He Yu
- State Key Laboratory of Electronic Thin Flims and Intergrated Devices, School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , 610054 Chengdu , Sichuan , P. R. China
| | - Yunlu Lian
- State Key Laboratory of Electronic Thin Flims and Intergrated Devices, School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , 610054 Chengdu , Sichuan , P. R. China
| | - Teng Sun
- State Key Laboratory of Electronic Thin Flims and Intergrated Devices, School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , 610054 Chengdu , Sichuan , P. R. China
| | - Xiaonan Yang
- State Key Laboratory of Electronic Thin Flims and Intergrated Devices, School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , 610054 Chengdu , Sichuan , P. R. China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Flims and Intergrated Devices, School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , 610054 Chengdu , Sichuan , P. R. China
| | - Guangzhong Xie
- State Key Laboratory of Electronic Thin Flims and Intergrated Devices, School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , 610054 Chengdu , Sichuan , P. R. China
| | - Xiaosong Du
- State Key Laboratory of Electronic Thin Flims and Intergrated Devices, School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , 610054 Chengdu , Sichuan , P. R. China
| | - Jun Gou
- State Key Laboratory of Electronic Thin Flims and Intergrated Devices, School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , 610054 Chengdu , Sichuan , P. R. China
| | - Weizhi Li
- State Key Laboratory of Electronic Thin Flims and Intergrated Devices, School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , 610054 Chengdu , Sichuan , P. R. China
| | - Huiling Tai
- State Key Laboratory of Electronic Thin Flims and Intergrated Devices, School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , 610054 Chengdu , Sichuan , P. R. China
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Ghosh R, Yadav K, Kataria M, Lin HI, Paul Inbaraj CR, Liao YM, Nguyen Y, Lu CH, Hofmann M, Sankar R, Shih WH, Hsieh YP, Chen YF. Heavy Mediator at Quantum Dot/Graphene Heterojunction for Efficient Charge Carrier Transfer: Alternative Approach for High-Performance Optoelectronic Devices. ACS APPLIED MATERIALS & INTERFACES 2019; 11:26518-26527. [PMID: 31283174 DOI: 10.1021/acsami.9b08294] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) material nanocomposites have emerged as a material system for discovering new physical phenomena and developing novel devices. However, because of the low density of states of most two-dimensional materials such as graphene, the heterostructure of nanocomposites suffers from an enhanced depletion region, which can greatly reduce the efficiency of the charge carrier transfer and deteriorate the device performance. To circumvent this difficulty, here we propose an alternative approach by inserting a second 2D mediator with a heavy effective mass having a large density of states in-between the heterojunction of 2D nanocomposites. The mediator can effectively reduce the depletion region and form a type-II band alignment, which can speed up the dissociation of electron-hole pairs and enhance charge carrier transfer. To illustrate the principle, we demonstrate a novel stretchable photodetector based on the combination of graphene/ReS2/perovskite quantum dots. Two-dimensional ReS2 acts as a mediator in-between highly absorbing perovskite quantum dots and a high-mobility graphene channel and a thiol-based linker between the ReS2 and the perovskite. It is found that the optical sensitivity can be enhanced by 22 times. This enhancement was ascribed to the improvement of the charge transfer efficiency as evidenced by optical spectroscopy measurements. The produced photosensors are capable of reaching the highest reported value of photoresponsivity (>107 A W-1) and detectivity compared to previously studied stretchable devices. Mechanical robustness with tolerable strain up to 100% and excellent stability make our device ideal for future wearable electronics.
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Affiliation(s)
- Rapti Ghosh
- Department of Physics , National Central University , Chung-Li 320 , Taiwan
| | - Kanchan Yadav
- Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics , Academia Sinica , Taipei 106 , Taiwan
| | - Monika Kataria
- Department of Physics , National Central University , Chung-Li 320 , Taiwan
| | | | - Christy Roshini Paul Inbaraj
- Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics , Academia Sinica , Taipei 106 , Taiwan
- Department of Engineering and System Sciences , National Tsing Hua University , Hsinchu 30013 , Taiwan
| | - Yu-Ming Liao
- Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics , Academia Sinica , Taipei 106 , Taiwan
| | | | - Cheng-Hsin Lu
- Department of Material Sciences and Engineering , Drexel University , Philadelphia , Pennsylvania 19104 , United States
| | | | - Raman Sankar
- Institute of Physics , Academia Sinica , Taipei 11529 , Taiwan
- Centre for Condensed Matter Sciences , National Taiwan University , Taipei 10617 , Taiwan
| | - Wei-Heng Shih
- Department of Material Sciences and Engineering , Drexel University , Philadelphia , Pennsylvania 19104 , United States
| | | | - Yang-Fang Chen
- Advanced Research Centre for Green Materials Science and Technology , National Taiwan University , Taipei , Taiwan
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Paul Inbaraj CR, Gudelli VK, Mathew RJ, Ulaganathan RK, Sankar R, Lin HY, Lin HI, Liao YM, Cheng HY, Lin KH, Chou FC, Chen YT, Lee CH, Guo GY, Chen YF. Sn-Doping Enhanced Ultrahigh Mobility In 1-xSn xSe Phototransistor. ACS APPLIED MATERIALS & INTERFACES 2019; 11:24269-24278. [PMID: 31250634 DOI: 10.1021/acsami.9b06433] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional ternary materials are attracting widespread interest because of the additional degree of freedom available to tailor the material property for a specific application. An In1-xSnxSe phototransistor possessing tunable ultrahigh mobility by Sn-doping engineering is demonstrated in this study. A striking feature of In1-xSnxSe flakes is the reduction in the oxide phase compared to undoped InSe, which is validated by spectroscopic analyses. Moreover, first-principles density functional calculations performed for the In1-xSnxSe crystal system reveal the same effective mass when doped with Sn atoms. Hence, because of an increased lifetime owing to the enhanced crystal quality, the carriers in In1-xSnxSe have higher mobility than in InSe. The internally boosted electrical properties of In1-xSnxSe exhibit ultrahigh mobility of 2560 ± 240 cm2 V-1 s-1 by suppressing the interfacial traps with substrate modification and channel encapsulation. As a phototransistor, the ultrathin In1-xSnxSe flakes are highly sensitive with a detectivity of 1014 Jones. It possesses a large photoresponsivity and photogain (Vg = 40 V) as high as 3 × 105 A W-1 and 0.5 × 106, respectively. The obtained results outperform all previously reported performances of InSe-based devices. Thus, the doping-engineered In1-xSnxSe-layered semiconductor finds a potential application in optoelectronics and meets the demand for faster electronic technology.
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Affiliation(s)
| | - Vijay Kumar Gudelli
- Physics Division , National Center for Theoretical Sciences , Hsinchu 30013 , Taiwan
| | - Roshan Jesus Mathew
- Department of Engineering and System Science , National Tsing Hua University , Hsinchu 30013 , Taiwan
- Institute of Atomic and Molecular Sciences , Academia Sinica , Taipei 10617 , Taiwan
| | | | | | | | | | | | | | | | | | - Yit-Tsong Chen
- Institute of Atomic and Molecular Sciences , Academia Sinica , Taipei 10617 , Taiwan
| | - Chih-Hao Lee
- Department of Engineering and System Science , National Tsing Hua University , Hsinchu 30013 , Taiwan
| | - Guang-Yu Guo
- Physics Division , National Center for Theoretical Sciences , Hsinchu 30013 , Taiwan
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