1
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Gou R, Zhou S, Shi C, Sun Q, Huang Z, Zhao J, Xiao Y, Lei S, Cheng B. Control of positive and negative photo- and thermal-responses in a single PbI 2@CH 3NH 3PbI 3 micro/nanowire-based device for real-time sensing, nonvolatile memory, and logic operation. MATERIALS HORIZONS 2024; 11:2258-2270. [PMID: 38439663 DOI: 10.1039/d4mh00070f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2024]
Abstract
CH3NH3PbI3 has shown great potential for photodetectors and photovoltaic devices due to its excellent positive response to visible light. However, its real-time response characteristics hinder its application in optical memory and logic operation; moreover, the presence of excessive PbI2 is a double-edged sword. Herein, we constructed a dual-terminal device using a single CH3NH3PbI3 micro/nanowire with two Ag electrodes, and then in situ introduced PbI2 quantum dots (QDs) as hole trap centres by thermal decomposition at 160 °C. An anomalous negative photoconductivity (NPC) effect for sub-bandgap light below the PbI2 bandgap is obtained. Importantly, an electrically erasable nonvolatile photomemory can be realized. Furthermore, the device also exhibits an abnormal positive thermal resistance (PTR)-related thermomemory effect, and the thermal-induced high-resistance state (HRS) can be erased by a large bias or an illumination of 365 nm super-bandgap UV light. Additionally, logical "OR" gate operations are achieved through a combination of 650 nm sub-bandgap light and a 70 °C temperature-induced HRS, as well as a large bias and 365 nm super-bandgap light-triggered low-resistance state. These effects are attributed to the excitation and injection of holes in QDs and structural defect traps. This multifunctional device, integrating real-time sensing, nonvolatile memory, and logical operation, holds significant potential for novel electronic and optoelectronic applications.
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Affiliation(s)
- Runna Gou
- School of Physics and Materials Science, Nanchang University, Jiangxi 330031, P. R. China.
- School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Shuanfu Zhou
- School of Physics and Materials Science, Nanchang University, Jiangxi 330031, P. R. China.
| | - Cencen Shi
- Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China
| | - Qinghua Sun
- School of Physics and Materials Science, Nanchang University, Jiangxi 330031, P. R. China.
| | - Zhikang Huang
- Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China
| | - Jie Zhao
- School of Physics and Materials Science, Nanchang University, Jiangxi 330031, P. R. China.
| | - Yanhe Xiao
- School of Physics and Materials Science, Nanchang University, Jiangxi 330031, P. R. China.
| | - Shuijin Lei
- School of Physics and Materials Science, Nanchang University, Jiangxi 330031, P. R. China.
| | - Baochang Cheng
- School of Physics and Materials Science, Nanchang University, Jiangxi 330031, P. R. China.
- Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China
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2
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Yang F, Zhang Y, Feng X, Guo J, Cheng G, Du Z. Light and voltage dual-modulated volatile resistive switching in single ZnO nanowires. NANOTECHNOLOGY 2024; 35:185201. [PMID: 38271735 DOI: 10.1088/1361-6528/ad22b1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Accepted: 01/24/2024] [Indexed: 01/27/2024]
Abstract
A single ZnO nanowire device with volatile resistive switching behavior has been prepared. Different from traditional resistive switching devices, such ZnO nanowire devices do not exhibit resistive switching behaviors under a single bias voltage, and appear resistive switching behavior under the combined action of light stimuli and bias voltage. Through the demonstration of the time-dependent hysteresis curve and atmosphere-dependent hysteresis loop of the resistive switching devices, it is believed that under the resistive switching process, ultraviolet illumination can increase the carrier concentration and modulate the barrier depletion structure, and external bias voltage can ionize the surface state. They work together to modulate the switching process of the devices. Such light stimuli and bias voltage dual-modulated resistive switching device enables optical control and may thus be considered for sensory applications or optically tunable memories.
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Affiliation(s)
- Feng Yang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
| | - Yongle Zhang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
| | - Xue Feng
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
| | - Junmeng Guo
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
| | - Gang Cheng
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
| | - Zuliang Du
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
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3
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Muthu C, Resmi AN, Ajayakumar A, Ravindran NEA, Dayal G, Jinesh KB, Szaciłowski K, Vijayakumar C. Self-Assembly of Delta-Formamidinium Lead Iodide Nanoparticles to Nanorods: Study of Memristor Properties and Resistive Switching Mechanism. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2304787. [PMID: 38243886 DOI: 10.1002/smll.202304787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Revised: 12/02/2023] [Indexed: 01/22/2024]
Abstract
In the quest for advanced memristor technologies, this study introduces the synthesis of delta-formamidinium lead iodide (δ-FAPbI3 ) nanoparticles (NPs) and their self-assembly into nanorods (NRs). The formation of these NRs is facilitated by iodide vacancies, promoting the fusion of individual NPs at higher concentrations. Notably, these NRs exhibit robust stability under ambient conditions, a distinctive advantage attributed to the presence of capping ligands and a crystal lattice structured around face-sharing octahedra. When employed as the active layer in resistive random-access memory devices, these NRs demonstrate exceptional bipolar switching properties. A remarkable on/off ratio (105 ) is achieved, surpassing the performances of previously reported low-dimensional perovskite derivatives and α-FAPbI3 NP-based devices. This enhanced performance is attributed to the low off-state current owing to the reduced number of halide vacancies, intrinsic low dimensionality, and the parallel alignment of NRs on the FTO substrate. This study not only provides significant insights into the development of superior materials for memristor applications but also opens new avenues for exploring low-dimensional perovskite derivatives in advanced electronic devices.
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Affiliation(s)
- Chinnadurai Muthu
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002, India
| | - A N Resmi
- Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547, India
| | - Avija Ajayakumar
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002, India
| | - N E Aswathi Ravindran
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
| | - G Dayal
- Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547, India
| | - K B Jinesh
- Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547, India
| | - Konrad Szaciłowski
- Academic Centre for Materials and Nanotechnology, AGH University of Krakow, Mickiewicza 30, Krakow, 30 059, Poland
| | - Chakkooth Vijayakumar
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002, India
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Griffin K, Redmond G. Volatile Memristive Devices with Analog Resistance Switching Based on Self-Assembled Squaraine Microtubes as Synaptic Emulators. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2539-2553. [PMID: 38174356 PMCID: PMC10797587 DOI: 10.1021/acsami.3c13735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 12/14/2023] [Accepted: 12/20/2023] [Indexed: 01/05/2024]
Abstract
In this work, the discovery of volatile memristive devices that exhibit analog resistive switching (RS) and synaptic emulation based on squaraine materials is presented. Specifically, organic microtubes (MTs) based on 2,4-bis[(4-(N,N-diisobutyl)-2-6-hydroxyphenyl]squaraine (SQ) are prepared by evaporation-induced self-assembly (EISA). The MTs are ca. 2 μm in diameter (aspect ratio: 10-130). While powder X-ray diffraction data for MTs identify monoclinic and orthorhombic polymorphs, optical data report the monoclinic phase with energetic disorder. By favorable energetic alignment of the Au work function with the SQ HOMO energy, unipolar (hole-only) symmetric metal-insulator-metal devices are formed by EISA of MT meshes on interdigitated electrodes. The DC I-V characteristics acquired exhibit pinched hysteretic I-V loops, indicative of memristive behavior. Analysis indicates Ohmic transport at low bias with carrier extraction by thermionic emission. At high bias, space-charge-limited conduction in the presence of traps distributed in energy, enhanced by a Poole-Frenkel effect and with carrier extraction by Fowler-Nordheim tunneling, is observed. These data indicate purely electronic conduction. I-V hysteresis attenuates at smaller voltage windows, suggesting that carrier trapping/detrapping underpins the hysteresis. By applying triangular voltage waveforms, device conductance gradually increases sweep-on-sweep, with wait-time-erase or voltage-erase options. Using square waveforms, repeated erase-write-read of multiple distinct conductance states is achieved. Such analog RS behavior is consistent with trap filling/emptying effects. By waveform design, volatile conductance states may also be written so that successive conductance states exhibit identical current levels, indicating forgetting of previously written states and mimicking the forgetting curve. Finally, advanced synaptic functions, i.e., excitatory postsynaptic current, paired-pulse facilitation, pulse-dependent plasticity, and a transition from short- to long-term memory driven by post-tetanic potentiation, are demonstrated.
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Affiliation(s)
- Karl Griffin
- School of Chemistry, University College Dublin, Belfield, Dublin 4, Ireland
| | - Gareth Redmond
- School of Chemistry, University College Dublin, Belfield, Dublin 4, Ireland
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Hong Z, Quan H, Ke C, Ouyang Z, Cheng B. Controllably modulated asymmetrical photoresponse with a nonvolatile memory effect in a single CH 3NH 3PbI 3 micro/nanowire for photorectifiers and photomemory. NANOSCALE 2023; 15:13359-13370. [PMID: 37527151 DOI: 10.1039/d3nr01921g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Nanostructured hybrid organic-inorganic perovskites exhibit remarkable photodetection performance due to their abundant surface states and high responsivity to visible light. However, in traditional photodetectors with a symmetrical configuration of two-terminal electrodes, the photoresponse is independent of bias polarity. Moreover, for self-powered photodetectors, an asymmetric structure of the chemical composition, such as p-n and Schottky junctions, and two different electrodes are necessary. Herein, we demonstrate a modulable asymmetrical photoresponse by packing only one electrode end in a single CH3NH3PbI3 micro/nanowire with two symmetrical Ag electrodes. This not only enables the high performance of light- and bias-modulated multifunctional photorectifiers and self-powered photodetectors, but also allows controllable implementation of nonvolatile photomemory with a tunable spectral responsivity and range. At an unpacked electrode interface, trace moisture in the environment promotes a good bonding of Ag+ and I-, substantially decreasing the interface barrier. Conversely, at a packed electrode interface, abundant surface states can be well preserved, leading to a high interface barrier. Notably, under a large voltage and strong light, the redox of Ag/AgI at the unpacked electrode interface and the injection and ejection of holes at the packed electrode interface can be reversibly conducted by inverting the voltage polarity, enabling a controllable nonvolatile modulation. Therefore, by clarifying the actual origin of the photoelectrical response of CH3NH3PbI3 micro/nanowires at electrode interfaces, high-performance multifunctional photorectifiers and self-powered photodetectors based on asymmetrical interface photovoltaic effects with two symmetrical electrodes can be controllably realized. Furthermore, by precise cooperative modulation of two electrode interface states with a large voltage and strong illumination, nonvolatile photomemory with a tunable spectral responsivity and range can be implemented.
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Affiliation(s)
- Zhen Hong
- School of Materials Science and Engineering, Nanchang Hangkong University, Jiangxi 330063, P. R. China
| | - Hongying Quan
- School of Materials Science and Engineering, Nanchang Hangkong University, Jiangxi 330063, P. R. China
| | - Changying Ke
- School of Environment and Energy, Jiangxi Modern Polytechnic College, Jiang Xi 330095, P. R. China
| | - Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China.
| | - Baochang Cheng
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China.
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
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Guan X, Lei Z, Yu X, Lin CH, Huang JK, Huang CY, Hu L, Li F, Vinu A, Yi J, Wu T. Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203311. [PMID: 35989093 DOI: 10.1002/smll.202203311] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 07/05/2022] [Indexed: 06/15/2023]
Abstract
Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.
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Affiliation(s)
- Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Zhihao Lei
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Xuechao Yu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science, 398 Ruoshui Road, Suzhou, 215123, China
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Feng Li
- School of Physics, Nano Institute, ACMM, The University of Sydney, Sydney, New South Wales, 2006, Australia
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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7
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Gou R, Ouyang Z, Xu C, He S, Cheng S, Shi C, Zhao J, Xiao Y, Lei S, Cheng B. Actual origin and precise control of asymmetrical hysteresis in an individual CH 3NH 3PbI 3 micro/nanowire for optical memory and logic operation. NANOSCALE HORIZONS 2022; 7:1095-1108. [PMID: 35913084 DOI: 10.1039/d2nh00209d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although CH3NH3PbI3 can present an excellent photoresponse to visible light, its application in solar cells and photodetectors is seriously hindered due to hysteresis behaviour. Moreover, for its origin, there exist different opinions. Herein, we demonstrate a route to realize precise control for the electrical transport of a single CH3NH3PbI3 micro/nanowire by constructing a two-terminal device with asymmetric Ag and C electrodes, and its hysteresis can be clearly identified as a synergistic effect of the redox reaction at the interface of the Ag electrode and the injection and ejection of holes in the interfacial traps of the C electrode rather than its bulk effect. The device can show superior bias amplitude and illumination intensity dependence of hysteresis loops with typical bipolar resistive switching features. Thus, an excellent multilevel nonvolatile optical memory can be effectively realized by the modulation of the illumination and bias, and moreover a logic OR gate operation can be successfully implemented with voltage and illumination as input signals as well. This work clearly reveals and provides a new insight of hysteresis origin that can be attributed to a synergistic effect of two asymmetrical electrode interfaces, and therefore precisely controlling its electrical transport to realize an outstanding application potential in multifunctional devices integrated with optical nonvolatile memory and logic OR gate operation.
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Affiliation(s)
- Runna Gou
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Changsen Xu
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Song He
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Shouduan Cheng
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Cencen Shi
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Jie Zhao
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Yanhe Xiao
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Shuijin Lei
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Baochang Cheng
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
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Liu Q, Gao S, Xu L, Yue W, Zhang C, Kan H, Li Y, Shen G. Nanostructured perovskites for nonvolatile memory devices. Chem Soc Rev 2022; 51:3341-3379. [PMID: 35293907 DOI: 10.1039/d1cs00886b] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.
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Affiliation(s)
- Qi Liu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Song Gao
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Lei Xu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Wenjing Yue
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Chunwei Zhang
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Hao Kan
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Yang Li
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China. .,State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
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Ouyang Z, Huang Q, Xu C, Zhao J, Xiao Y, Lei S, Cheng B. Giant Piezoresistive Effect of CdS@C Hybrid Nanobelts for Volatile Real-Time Sensor and Erasable Nonvolatile Memory to Stress. ACS APPLIED MATERIALS & INTERFACES 2021; 13:22785-22795. [PMID: 33960767 DOI: 10.1021/acsami.1c02571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Here, CdS@C nanohybrid composites, where CdS quantum dots (QDs) are uniformly embedded in carbon micro-/nanobelt matrixes, are synthesized via a combustion synthesis followed by a postvulcanization. In the nanohybrids, trap centers are effectively created by the introduction of QDs and moreover their barrier height and filling level can be effectively modulated through a coupling of externally loaded strain and bias. Thus, a single CdS@C micro-/nanobelt-based two-terminal device can exhibit an ultrahigh real-time response to compressive and tensile strains with a tremendous gauge factor of above 104, high sensitivity, and fast response and recovery. More importantly, the trapped charges can be mechanically excited by stress, and furthermore, the stress-triggered high-resistance state can be well-maintained at room temperature and a relatively low operation bias. However, it can be back to its initial low resistance state by loading a relatively large bias, showing a superior erasable stress memory function with a window of about 103. By an effective construction of trap centers in hybrid composites, not only can an ultrahigh performance of volatile real-time stress sensor be obtained under the synergism of external stress and electric field but also can an outstanding erasable nonvolatile stress memory be successfully realized.
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Affiliation(s)
- Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China
| | - Qianfei Huang
- School of Information Engineering, Jiangxi Modern Polytechnic College, Jiangxi 330095, P. R. China
| | - Changsen Xu
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China
| | - Jie Zhao
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
| | - Yanhe Xiao
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
| | - Shuijin Lei
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
| | - Baochang Cheng
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
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10
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Zeng F, Guo Y, Hu W, Tan Y, Zhang X, Feng J, Tang X. Opportunity of the Lead-Free All-Inorganic Cs 3Cu 2I 5 Perovskite Film for Memristor and Neuromorphic Computing Applications. ACS APPLIED MATERIALS & INTERFACES 2020; 12:23094-23101. [PMID: 32336082 DOI: 10.1021/acsami.0c03106] [Citation(s) in RCA: 54] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Recently, several types of lead halide perovskites have been demonstrated as active layers in resistive switching memory or artificial synaptic devices for neuromorphic computing applications. However, the thermal instability and toxicity of lead halide perovskites severely restricted their further practical applications. Herein, the environmentally friendly and uniform Cs3Cu2I5 perovskite films are introduced to act as the active layer in the Ag/Cs3Cu2I5/ITO memristor. Generally, the Ag ions could react with iodide ions and form AgIx compounds easily, so the Ag/PMMA/Cs3Cu2I5/ITO memristor was designed by employing the ultrathin polymethylmethacrylate (PMMA) layer to avoid the direct contact between the top Ag electrode and Cs3Cu2I5 perovskite films. After optimization, the obtained memristor demonstrated bipolar resistive switching with low operating voltage (< ±1 V), large on/off ratio (102), stable endurance (100 cycles), and long retention (>104 s). Additionally, biological synaptic behaviors including long-term potentiation and long-term depression have been investigated. By using the MNIST handwritten recognition data set, the handwritten recognition rate based on experimental data could reach 94%. In conclusion, our work provides the opportunity of exploring the novel application for the development of next-generation neuromorphic computing based on lead-free halide perovskites.
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Affiliation(s)
- Fanju Zeng
- Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
- School of Big Data Engineering, Kaili University, Kaili, Guizhou 556011, China
| | - Yuanyang Guo
- Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Wei Hu
- Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Yongqian Tan
- School of Big Data Engineering, Kaili University, Kaili, Guizhou 556011, China
| | - Xiaomei Zhang
- School of Big Data Engineering, Kaili University, Kaili, Guizhou 556011, China
| | - Julin Feng
- Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Xiaosheng Tang
- Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
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