Stretchable photosensors with InN nanowires operating at a wavelength of 1.3 μm

Stretchable photosensors, which operate in the wavelength window of 1.3 μm, were fabricated with InN nanowires (NWs) and graphene to serve as a light-absorbing medium and carrier channel, respectively. Specifically, the stretchable photosensors were fabricated by transferring InN NWs embedded in graphene layers onto polyurethane substrates pre-stretched at the strain levels of 10, 20, 30, 40, 50, and 60%. An InN-NW photosensor fabricated at the pre-strain level of 50% and stretched at the strain of 50% produces a photocurrent of 0.144 mA, which corresponds to 76.2% of that (0.189 mA) measured in the released state. The photocurrent and photoresponsivity of the photosensor measured after 1000 cyclic-stretching tests are comparable to those measured before stretching. The performance of the stretchable photosensors was largely unaffected by parameters such as the relative humidity and duration of operation (up to 30 days), indicating that the devices operate very stably.

Self-powered image array composed of touch-free sensors fabricated with semiconductor nanowires

We successfully develop a self-powered image array (IA) composed of 16 touch-free sensors (TFSs) fabricated with semiconductor InN nanowires (NWs) as a response medium. Without using a power supply, the InN-NW TFS can detect the position of a human hand 30 cm away from the device surface. It also distinguishes different materials such as polyimide, Al foil, printing paper, latex, and polyvinyl chloride in non-contact mode at a distance of 1 cm. The self-powered TFS-IA clearly distinguishes square-shaped transparent polydimethylsiloxane film attached to the back of a human hand positioned 5 cm from the device, indicating the possibility for detecting changes in the surface texture of human skin, such as skin burns or skin cancer. The performance of the self-powered TFS and TFS-IA is attributed to high electrostatic induction of InN NWs by external triboelectricity resulting from the simple movement of the target object, which differs markedly from conventional sensors designed to detect variations in the temperature or light essentially using a power supply.

Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy

Controlled growth of In-rich InGaN nanowires/nanorods (NRs) has long been considered as a very challenging task. Here, we present the first attempt to fabricate InGaN NRs by selective area growth using hydride vapor phase epitaxy. It is shown that InGaN NRs with different indium contents up to 90% can be grown by varying the In/Ga flow ratio. Furthermore, nanowires are observed on the surface of the grown NRs with a density that is proportional to the Ga content. The impact of varying the NH₃ partial pressure is investigated to suppress the growth of these nanowires. It is shown that the nanowire density is considerably reduced by increasing the NH₃ content in the vapor phase. We attribute the emergence of the nanowires to the final step of growth occurring after stopping the NH₃ flow and cooling down the substrate. This is supported by a theoretical model based on the calculation of the supersaturation of the ternary InGaN alloy in interaction with the vapor phase as a function of different parameters assessed at the end of growth. It is shown that the decomposition of the InGaN solid alloy indeed becomes favorable below a critical value of the NH₃ partial pressure. The time needed to reach this value increases with increasing the input flow of NH₃, and therefore the alloy decomposition leading to the formation of nanowires becomes less effective. These results should be useful for fundamental understanding of the growth of InGaN nanostructures and may help to control their morphology and chemical composition required for device applications.

Unraveling the effect of Gd doping on the structural, optical, and magnetic properties of ZnO based diluted magnetic semiconductor nanorods

The structural, magnetic, and optical properties of the pristine and Gd-doped ZnO nanorods (NRs), prepared by facile thermal decomposition, have been studied using a combination of experimental and density functional theory (DFT) with Hubbard U correction approaches. The XRD patterns demonstrate the single-phase wurtzite structure of the pristine and doped ZnO. The rod-like shape of the nanoparticles has been examined by FESEM and TEM techniques. Elemental compositions of the pure and doped samples were identified by EDX measurement. Due to the Burstein–Moss shift, the optical band gaps of the doped samples have been widened compared to pristine ZnO. The PL spectra show the presence of complex defects. Room temperature magnetic properties have been measured using VSM and revealed the coexistence of paramagnetic and weak ferromagnetic ordering in Gd³⁺ doped ZnO-NRs. The magnetic moment was increased upon addition of more Gd ions into the ZnO host lattice. The DFT+U calculations confirm that the presence of vacancy-complexes has a significant effect on the structural, electronic, and magnetic properties of a pristine ZnO system.

Gd doped ZnO nanorods.