1
|
Labed M, Moon JY, Kim SI, Park JH, Kim JS, Venkata Prasad C, Bae SH, Rim YS. 2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications. ACS NANO 2024; 18:30153-30183. [PMID: 39436685 DOI: 10.1021/acsnano.4c09173] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2024]
Abstract
Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-Ga2O3 have significantly enhanced the functionality of electronic and optoelectronic devices, particularly in harsh environment conditions. However, some of these materials face challenges such as low thermal conductivity, limited P-type conductivity, and scalability issues, which can hinder device performance under extreme conditions like high temperature and irradiation. In this review paper, we explore the integration of various two-dimensional materials (2DMs) to address these challenges. These materials offer excellent properties such as high thermal conductivity, mechanical strength, and electrical properties. Notably, graphene, hexagonal boron nitride, transition metal dichalcogenides, 2D and quasi-2D Ga2O3, TeO2, and others are investigated for their potential in improving ultrawide bandgap semiconductor-based devices. We highlight the significant improvement observed in the device performance after the incorporation of 2D materials. By leveraging the properties of these materials, ultrawide bandgap semiconductor devices demonstrate enhanced functionality and resilience in harsh environmental conditions. This review provides valuable insights into the role of 2D materials in advancing the field of ultrawide bandgap semiconductors and highlights opportunities for further research and development in this area.
Collapse
Affiliation(s)
- Madani Labed
- Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University Seoul, Seoul 05006, Republic of Korea
| | - Ji-Yun Moon
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, Missouri 63130, United States
| | - Seung-Il Kim
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, Missouri 63130, United States
| | - Jang Hyeok Park
- Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University Seoul, Seoul 05006, Republic of Korea
| | - Justin S Kim
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, Missouri 63130, United States
- Institute of Materials Science and Engineering, Washington University in Saint Louis, Saint Louis, Missouri 63130, United States
| | - Chowdam Venkata Prasad
- Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University Seoul, Seoul 05006, Republic of Korea
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, Missouri 63130, United States
- Institute of Materials Science and Engineering, Washington University in Saint Louis, Saint Louis, Missouri 63130, United States
| | - You Seung Rim
- Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University Seoul, Seoul 05006, Republic of Korea
| |
Collapse
|
2
|
Shi Y, Chen Y, Dong H, Wang H, Qian P. Investigation of phase transition, mechanical behavior and lattice thermal conductivity of halogen perovskites using machine learning interatomic potentials. Phys Chem Chem Phys 2023; 25:30644-30655. [PMID: 37933446 DOI: 10.1039/d3cp04657e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2023]
Abstract
Using a machine learning (ML) approach to fit DFT data, interatomic potentials have been successfully extracted. In this study, the phase transition, mechanical behavior and lattice thermal conductivity are investigated for halogen perovskites using NEP-based MD simulations in a large supercell including 16 000 atoms, which breaks through the size and temperature effects in DFT. A clear phase transition from orthorhombic (γ) → tetragonal (β) → cubic (α) is observed during the heating process. During the cooling process, CsPbCl3 and CsPbBr3 exhibit perfect reversible behavior, while CsPbI3 only undergoes a phase transition from α to β. Then, the key mechanical parameters, including Poisson's ratio, tensile strength, critical strain and bulk modulus, are predicted. The thermal conductivity is also investigated using the NEP-based MD simulations. At room temperature, they exhibit extremely low thermal conductivity. The predicted results are compared with the experimental results, and the rationality of ML potentials has been confirmed.
Collapse
Affiliation(s)
- Yongbo Shi
- College of Physical Science and Technology, Bohai University, Jinzhou 121013, P. R. China.
| | - Yuanyuan Chen
- College of Physical Science and Technology, Bohai University, Jinzhou 121013, P. R. China.
| | - Haikuan Dong
- College of Physical Science and Technology, Bohai University, Jinzhou 121013, P. R. China.
| | - Hao Wang
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Ping Qian
- Department of Physics, University of Science and Technology Beijing, Beijing 100083, P. R. China.
| |
Collapse
|
3
|
The effect of non-analytical corrections on the phononic thermal transport in InX (X = S, Se, Te) monolayers. Sci Rep 2020; 10:1093. [PMID: 31974441 PMCID: PMC6978339 DOI: 10.1038/s41598-020-57644-0] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2019] [Accepted: 12/24/2019] [Indexed: 12/03/2022] Open
Abstract
We investigate the effect of non-analytical corrections on the phonon thermal transport properties in two-dimensional indium chalcogenide compounds. The longitudinal optical (LO) and transverse optical (TO) branches in the phonon dispersion are split near the Γ-point. The lattice thermal conductivity of monolayer InS is increased by 30.2% under non-analytical corrections because of the large LO-TO splitting at Γ-point. The predicted lattice thermal conductivities with non-analytical corrections at room temperature are 57.1 W/mK, 44.4 W/mK and 33.1 W/mK for the monolayer InS, InSe and InTe, respectively. The lattice thermal conductivity can be effectively reduced by nanostructures because the representative mean free paths are found very large in these monolayers. By quantifying the relative contribution of the phonon modes to the lattice thermal conductivity, we predict that the longitudinal acoustic branch is the main contributor to the lattice thermal conductivity. Due to the low lattice thermalconductivities of these monolayers, they can be useful in the nanoscale thermoelectric devices.
Collapse
|
4
|
Muthaiah R, Tarannum F, Annam RS, Nayal AS, Danayat S, Garg J. Thermal conductivity of hexagonal BC 2P – a first-principles study. RSC Adv 2020; 10:42628-42632. [PMID: 35514895 PMCID: PMC9058011 DOI: 10.1039/d0ra08444a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2020] [Accepted: 11/12/2020] [Indexed: 11/21/2022] Open
Abstract
In this work, we report a high thermal conductivity (k) of 162 W m−1 K−1 and 52 W m−1 K−1 at room temperature, along the directions perpendicular and parallel to the c-axis, respectively, of bulk hexagonal BC2P (h-BC2P), using first-principles calculations.
Collapse
Affiliation(s)
- Rajmohan Muthaiah
- School of Aerospace and Mechanical Engineering
- University of Oklahoma
- Norman
- USA
| | - Fatema Tarannum
- School of Aerospace and Mechanical Engineering
- University of Oklahoma
- Norman
- USA
| | - Roshan Sameer Annam
- School of Aerospace and Mechanical Engineering
- University of Oklahoma
- Norman
- USA
| | - Avinash Singh Nayal
- School of Aerospace and Mechanical Engineering
- University of Oklahoma
- Norman
- USA
| | - Swapneel Danayat
- School of Aerospace and Mechanical Engineering
- University of Oklahoma
- Norman
- USA
| | - Jivtesh Garg
- School of Aerospace and Mechanical Engineering
- University of Oklahoma
- Norman
- USA
| |
Collapse
|