Second harmonic generation in Janus MoSSe a monolayer and stacked bulk with vertical asymmetry

Stacking Order Engineering of Two-Dimensional Materials and Device Applications

Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.

Co3X8 (X = Cl and Br): multiple phases and magnetic properties of the Kagome lattice

The unique magnetic properties of two-dimensional (2D) materials have demonstrated huge potential for applications in nanodevices and spintronics. In this work, we propose a new Kagome lattice, Co3X8 (X = Cl and Br), based on density functional theory (DFT) calculation. We find that Co/X in Co3X8 has spontaneous movement in the lattice, resulting in 156- and 12-phases of Co3X8 and diverse magnetic and electronic properties. We show that the magnetic and electronic properties of Co3X8 can be engineered by strain, and the magnetic properties of Co3X8 are highly related to the spontaneous movement of X. Moreover, the transmission property of 12-Co3X8 shows clear angle-dependent features due to the symmetry breaking as caused by the spontaneous movement of X. Our findings may provide not only a possible Kagome lattice with unique properties, but also a strategy for designing nanodevices and for spintronics.

Tunable Li-ion diffusion properties in MoSSe bilayer anodes by strain gradient

Layered MoSSe nanostructures have been shown as potential candidates for the anode of lithium ion (Li-ion) batteries. The diffusion properties are generally critical to the performance of ionic batteries. The possible migration paths and associated diffusion energy barriers of Li-ions are systematically explored in MoSSe bilayer anodes with different stacking patterns by means of first-principles simulations. It is found that the diffusion properties strongly depend on interfaces and stacking patterns. Furthermore, the simulation results show that the diffusion energy barrier (and thus the diffusion coefficient) can be significantly reduced (enlarged) by applying a positive strain gradient, while increased (reduced) by applying a negative one. For example, the diffusion coefficient is increased roughly by 100 times relative to that of the pristine one when subjected to a strain gradient of 0.02 Å-1. In particular, it is found that less maximum strain is required in the strain-gradient than the uniform strain in order to achieve the same diffusion energy barrier. By careful analysis, the underlying mechanism can be attributed to the flexo-diffusion coupling effect. The coupling strength is characterized by the so-called flexo-diffusion coupling constant which is also calculated for each simulation model. The results of this work may provide valuable insights into the design and optimization of the anodes of ionic batteries.

Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures

Beyond three-dimensional (3D) architectures, polar semiconductor heterostructures are developing in the direction of two-dimensional (2D) scale with mix-dimensional integration for novel properties and multifunctional applications. Herein, we stacked 2D Janus MoSSe and 3D wurtzite GaN polar semiconductors to construct MoSSe/GaN polar heterostructures by polarity configurations. The structural stability was enhanced as binding energy changed from -0.08 eV/-0.17 eV in the N polarity to -0.24 eV/-0.42 eV in the Ga polarity. In particular, the polarity reversal of GaN in contact with Janus MoSSe not only determined the charge transfer direction but also significantly increased the electrostatic potential difference from 0.71 eV/0.78 eV in the N polarity to 3.13 eV/2.24 eV in the Ga polarity. In addition, strain modulation was further utilized to enhance interfacial polarization and tune the electronic energy band profiles of Janus MoSSe/GaN polar heterostructures. By applying in-plane biaxial strains, the AA and AA' polarity configurations induced band alignment transition from type I (tensile) to type II (compressive). As a result, both the polarity reversal and strain modulation provide effective ways for the multifunctional manipulation and facile design of Janus MoSSe/III-nitrides polar heterostructures, which broaden the Janus 2D/3D polar semiconducting devices in advanced electronics, optoelectronics, and energy harvesting applications.

Nonlinear Optical Responses of Janus MoSSe/MoS2 Heterobilayers Optimized by Stacking Order and Strain

Nonlinear optical responses in second harmonic generation (SHG) of van der Waals heterobilayers, Janus MoSSe/MoS2, are theoretically optimized as a function of strain and stacking order by adopting an exchange-correlation hybrid functional and a real-time approach in first-principles calculation. We find that the calculated nonlinear susceptibility, χ(2), in AA stacking (550 pm/V) becomes three times as large as AB stacking (170 pm/V) due to the broken inversion symmetry in the AA stacking. The present theoretical prediction is compared with the observed SHG spectra of Janus MoSSe/MoS2 heterobilayers, in which the peak SHG intensity of AA stacking becomes four times as large as AB stacking. Furthermore, a relatively large, two-dimensional strain (4%) that breaks the C3v point group symmetry of the MoSSe/MoS2, enhances calculated χ(2) values for both AA (900 pm/V) and AB (300 pm/V) stackings 1.6 times as large as that without strain.

Electronic Structure Modulation of Nanographenes for Second Order Nonlinear Optical Molecular Materials

Nanographenes (NGs) have drawn extensive attention as promising candidates for next-generation optoelectronic and nonlinear optical (NLO) materials, owing to its unique optoelectronic properties and high thermal stability. However, the weak polarity or even non-polarity of NGs (resulting in weak even order NLO properties) and the high chemical reactivity of zigzag edged NGs hinder their further applications in nonlinear optics, thus stabilization (lowering the chemical reactivity) and polarizing the charge distribution in NGs are necessary for such applications of NGs. The fusion of heptagon and pentagon endows the azulene with the character of donor-acceptor, and the B=N unit is isoelectronic to C=C unit. The introduction of polar azulene and BN are idea to polarize and stabilize the electronic structure of NGs for NLO applications. In the present review, a survey on the functionalization and applications of NGs in nonlinear optics is conducted. The engineering of the electronic structure of NGs by topological defects, doping and edge modulation is summarized. Finally, a summary of challenges and perspectives for carbon-based NLO nanomaterials is presented.

Second Harmonic Generation in Janus Transition Metal Chalcogenide Oxide Monolayers: A First-Principles Investigation

Due to the unique optical responses induced by vertical atomic asymmetry inside a monolayer, two-dimensional Janus structures have been conceived as promising building blocks for nanoscale optical devices. In this paper, second harmonic generation (SHG) in Janus transition metal chalcogenide oxide monolayers is systematically investigated by the first-principles calculations. Second-order nonlinear susceptibilities are theoretically determined for Janus MXO (M = Mo/W, X = S/Se/Te) monolayers. The calculated values are comparable in magnitude with Janus MoSSe monolayer. X-M-O symmetry breaking leads to non-zero components in vertical direction, compared with the non-Janus structure. Focusing on the SHG induced by incident light at 1064 nm, polarization-dependent responses of six Janus MXO monolayers are demonstrated. The symmetry of p-polarization changes from six-fold to three-fold with acute incidence angle. Moreover, the effects of biaxial strain on band structures and SHG are further investigated, taking MoSO as an exemplary case. We expect these results to bring in recipes for designing nonlinear optical devices based on Janus transition metal chalcogenide oxide monolayers.

CO Electroreduction Mechanism on Single-Atom Zn (101) Surfaces: Pathway to C2 Products

Electrocatalytic reduction of carbon dioxide (CO₂RR) employs electricity to store renewable energy in the form of reduction products. The activity and selectivity of the reaction depend on the inherent properties of electrode materials. Single-atom alloys (SAAs) exhibit high atomic utilization efficiency and unique catalytic activity, making them promising alternatives to precious metal catalysts. In this study, density functional theory (DFT) was employed to predict stability and high catalytic activity of Cu/Zn (101) and Pd/Zn (101) catalysts in the electrochemical environment at the single-atom reaction site. The mechanism of C2 products (glyoxal, acetaldehyde, ethylene, and ethane) produced by electrochemical reduction on the surface was elucidated. The C-C coupling process occurs through the CO dimerization mechanism, and the formation of the *CHOCO intermediate proves beneficial, as it inhibits both HER and CO protonation. Furthermore, the synergistic effect between single atoms and Zn results in a distinct adsorption behavior of intermediates compared to traditional metals, giving SAAs unique selectivity towards the C2 mechanism. At lower voltages, the Zn (101) single-atom alloy demonstrates the most advantageous performance in generating ethane on the surface, while acetaldehyde and ethylene exhibit significant certain potential. These findings establish a theoretical foundation for the design of more efficient and selective carbon dioxide catalysts.

Ferro-piezoelectricity in emerging Janus monolayer BMX2 (M = Ga, In and X = S, Se): ab initio investigations

Nanoscale materials with inter-correlation characteristics are fundamental for developing high performance devices and applications. Hence theoretical research into unprecedented two-dimensional (2D) materials is crucial for improving understanding, especially when piezoelectricity is merged with other unique properties such as ferroelectricity. In this work, an unexplored 2D Janus family BMX₂ (M = Ga, In and X = S, Se) corresponding to group-III ternary chalcogenides has been explored. The structural and mechanical stability, and optical and ferro-piezoelectric properties of BMX₂ monolayers were investigated using first-principles calculations. We found that the lack of imaginary phonon frequencies in the phonon dispersion curves establishes the dynamic stability of the compounds. The monolayers BGaS₂ and BGaSe₂ are indirect semiconductors with bandgaps of 2.13 eV and 1.63 eV, respectively, while BInS₂ is a direct semiconductor with a bandgap of 1.21 eV. BInSe₂ is a novel zero-gap ferroelectric material with quadratic energy dispersion. All monolayers exhibit a high spontaneous polarization. The optical characteristics of the BInSe₂ monolayer show high light absorption ranging from the infrared to the ultraviolet. The BMX₂ structures exhibit in-plane and out-of-plane piezoelectric coefficients of up to 4.35 pm V^-1 and 0.32 pm V^-1. According to our findings, 2D Janus monolayer materials are a promising choice for piezoelectric devices.

Nonlinear Optical and Photocurrent Responses in Janus MoSSe Monolayer and MoS2-MoSSe van der Waals Heterostructure

Two-dimensional (2D) transition metal dichalcogenides are promising materials platforms for a variety of optoelectronic device applications. Janus 2D materials are a rising class of 2D materials with low symmetry, which leads to the emergence of out-of-plane electric polarization and piezoelectricity. Using first-principles density functional theory, we show that monolayer and bilayer heterostructure Janus MoSSe moieties exhibit strong nonlinear optical responses that are vanishing in the non-Janus form. The absence of horizontal mirror plane symmetry enables a circular photocurrent as well as a large out-of-plane second harmonic generation (SHG) and shift photocurrent. Through a comparative study of the Janus heterostructure MoS₂-MoSSe on five distinct stacking configurations, we find that the magnitude of the out-of-plane SHG in the Janus heterostructure is enhanced due to the interlayer coupling and interference effect compared to that of monolayer MoSSe. Thus, Janus 2D materials offer a unique opportunity for exploring nonlinear optical phenomena and designing configurable layered nonlinear optical materials.

Armchair Janus MoSSe Nanoribbon with Spontaneous Curling: A First-Principles Study

Based on density functional theory, we theoretically investigate the electronic structures of free-standing armchair Janus MoSSe nanoribbons (A-MoSSeNR) with width up to 25.5 nm. The equilibrium structures of nanoribbons with spontaneous curling are obtained by energy minimization in molecular dynamics (MD). The curvature is 0.178 nm^-1 regardless of nanoribbon width. Both finite element method and analytical solution based on continuum theory provide qualitatively consistent results for the curling behavior, reflecting that relaxation of intrinsic strain induced by the atomic asymmetry acts as the driving force. The non-edge bandgap of curled A-MoSSeNR reduces faster with the increase of width compared with planar nanoribbons. It can be observed that the real-space wave function at the non-edge VBM is localized in the central region of the curled nanoribbon. When the curvature is larger than 1.0 nm^-1, both edge bandgap and non-edge bandgap shrink with the further increase of curvature. Moreover, we explore the spontaneous curling and consequent sewing process of nanoribbon to form nanotube (Z-MoSSeNT) by MD simulations. The spontaneously formed Z-MoSSeNT with 5.6 nm radius possesses the lowest energy. When radius is smaller than 0.9 nm, the bandgap of Z-MoSSeNT drops rapidly as the radius decreases. We expect the theoretical results can help build the foundation for novel nanoscale devices based on Janus TMD nanoribbons.

Manipulation of the Magnetic Properties of Janus WSSe Monolayer by the Adsorption of Transition Metal Atoms

Two-dimensional Janus materials have great potential for the applications in spintronic devices due to their particular structures and novel characteristics. However, they are usually non-magnetic in nature. Here, different transition metals (TMs: Co, Fe, Mn, Cr, and V) adsorbed WSSe frameworks are constructed, and their structures and magnetic properties are comprehensively investigated by first-principles calculations. The results show that the top of W atom is the most stable absorption site for all the TM atoms, and all the systems exhibit magnetism. Moreover, their magnetic properties significantly depend on the adsorbed elements and the adsorbent chalcogens. A maximal total magnetic moment of 6 μB is obtained in the Cr-adsorbed system. The induced magnetism from S-surface-adsorption is always stronger than that for the Se-surface-adsorption due to its larger electrostatic potential. Interestingly, the easy magnetization axis in the Fe-adsorbed system switches from the in-plane to the out-of-plane when the adsorption surface changes from Se to S surface. The mechanism is analyzed in detail by Fe-3d orbital-decomposed density of states. This work provides a guidance for the modification of magnetism in low-dimensional systems.

Computational Study of Janus Transition Metal Dichalcogenide Monolayers for Acetone Gas Sensing

Recently, Janus two-dimensional (2D) transition metal dichalcogenides (TMDs) have been widely investigated and have provided exciting prospects in many fields such as photoelectric materials, photocatalysis, and gas sensors. In this study, we performed density functional theory (DFT) calculations to study the sensitivity of four volatile organic compounds (VOCs), including acetone, methanol, ethanol, and formyl aldehyde, over pristine 2D TMDs and 2D Janus TMD monolayers. We found that MoS2, Janus MoSSe, and Janus MoSTe demonstrated greater sensitivity toward acetone than other VOCs. Furthermore, the band gap values of the Janus MoSSe and Janus MoSTe monolayers dramatically changed after acetone adsorption on their sulfur layers, which was quite larger than the band gap change after acetone adsorption on the MoS2 monolayer. This result also leads to the extremely large conductivity change of Janus MoSSe and Janus MoSTe after sensing acetone. Hence, Janus MoSSe and Janus MoSTe monolayers show much higher sensitivity toward acetone in comparison with the pristine MoS2 monolayer. Finally, our finding indicates that Janus MoSSe and Janus MoSTe monolayers can be proposed as ultrahigh-sensitivity 2D TMD materials for acetone sensors.