Silicon photosensitisation using molecular layers

Effect of Surface Morphology Changes on Optical Properties of Silicon Nanowire Arrays

The optical properties of silicon nanowire arrays (SiNWs) are closely related to surface morphology due to quantum effects and quantum confinement effects of the existing semiconductor nanocrystal. In order to explore the influence of the diameters and distribution density of nanowires on the light absorption in the visible to near infrared band, we report the highly efficient method of multiple replication of versatile homogeneous Au films from porous anodic aluminum oxide (AAO) membranes by ion sputtering as etching catalysts; the monocrystalline silicon is etched along the growth templates in a fixed proportion chemical solution to form homogeneous ordered arrays of different morphology and distributions on the surface. In this system, we demonstrate that the synthesized nanostructure arrays can be tuned to exhibit different optical characteristics in the test wavelength range by adjusting the structural parameters of AAO membranes.

Near-Field Energy Transfer into Silicon Inversely Proportional to Distance Using Quasi-2D Colloidal Quantum Well Donors

Silicon is the most prevalent material system for light-harvesting applications; however, its inherent indirect bandgap and consequent weak absorption limits its potential in optoelectronics. This paper proposes to address this limitation by combining the sensitization of silicon with extraordinarily large absorption cross sections of quasi-2D colloidal quantum well nanoplatelets (NPLs) and to demonstrate excitation transfer from these NPLs to bulk silicon. Here, the distance dependency, d, of the resulting Förster resonant energy transfer from the NPL monolayer into a silicon substrate is systematically studied by tuning the thickness of a spacer layer (of Al₂ O₃ ) in between them (varied from 1 to 50 nm in thickness). A slowly varying distance dependence of d^-1 with 25% efficiency at a donor-acceptor distance of 20 nm is observed. These results are corroborated with full electromagnetic solutions, which show that the inverse distance relationship emanates from the delocalized electric field intensity across both the NPL layer and the silicon because of the excitation of strong in-plane dipoles in the NPL monolayer. These findings pave the way for using colloidal NPLs as strong light-harvesting donors in combination with crystalline silicon as an acceptor medium for application in photovoltaic devices and other optoelectronic platforms.

Observation of energy transfer at optical frequency to an ultrathin silicon waveguide

Energy transfer from a submonolayer of rhodamine 6G molecules to a 130 nm thick crystalline silicon (Si) waveguide is investigated. The dependence of the fluorescence lifetime of rhodamine on its distance to the Si waveguide is characterized and modeled successfully by a classical dipole model. The energy transfer process could be regarded as photon tunneling into the Si waveguide via the evanescent waves. The experimentally observed tunneling rate is well described by an analytical expression obtained via a complex variable analysis in the complex wavenumber plane.