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For: Li Q, Wang JF, Yan FF, Cheng ZD, Liu ZH, Zhou K, Guo LP, Zhou X, Zhang WP, Wang XX, Huang W, Xu JS, Li CF, Guo GC. Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide. Nanoscale 2019;11:20554-20561. [PMID: 31432857 DOI: 10.1039/c9nr05938e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]

For:	Li Q, Wang JF, Yan FF, Cheng ZD, Liu ZH, Zhou K, Guo LP, Zhou X, Zhang WP, Wang XX, Huang W, Xu JS, Li CF, Guo GC. Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide. Nanoscale 2019;11:20554-20561. [PMID: 31432857 DOI: 10.1039/c9nr05938e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]

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