A silicon-based quantum dot random laser

Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors

Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for fabricating a variety of semiconductor nanostructures. Since early investigations in 2000, research in this field has provided a deeper understanding of the underlying mechanisms of catalytic etching processes and enabled high control over etching conditions for diverse applications. In this Review, we present an overview of recent developments in the application of MacEtch to nanomanufacturing and processing of III-V based semiconductor materials and other materials beyond Si. We highlight the key findings and developments in MacEtch as applied to GaAs, GaN, InP, GaP, InGaAs, AlGaAs, InGaN, InGaP, SiC, β-Ga2O3, and Ge material systems. We further review a series of active and passive devices enabled by MacEtch, including light-emitting diodes (LEDs), field-effect transistors (FETs), optical gratings, sensors, capacitors, photodiodes, and solar cells. By reviewing demonstrated control of morphology, optimization of etch conditions, and catalyst-material combinations, we aim to distill the current understanding of beyond-Si MacEtch mechanisms and to provide a bank of reference recipes to stimulate progress in the field.

Ultralow Threshold Cavity-Free Laser Induced by Total Internal Reflection

Total internal reflection is one of the most important phenomena when a propagated wave strikes a medium boundary, which possesses a wide range of applications spanning from optical communication to a fluorescence microscope. It has also been widely used to demonstrate conventional laser actions with resonant cavities. Recently, cavity-free stimulated emission of radiation has attracted great attention in disordered media because of several exciting physical phenomena, ranging from Anderson localization of light to speckle-free imaging. However, unlike conventional laser systems, the total internal reflection has never been implemented in the study of laser actions derived from randomly distributed media. Herein, we demonstrate an ultra-low threshold cavity-free laser system using air bubbles as scattering centers in which the total internal reflection from the surface of air bubbles can greatly reduce the leakage of the scattered beam energy and then enhance light amplification within a coherent closed loop. Our approach provides an excellent alternative for the manipulation of optical energy flow to achieve ultra-low threshold cavity-free laser systems, which should be very useful for the development of high performance optoelectronic devices.