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Cheng Z, Zhang J, Lin L, Zhan Z, Ma Y, Li J, Yu S, Cui H. Pressure-Induced Modulation of Tin Selenide Properties: A Review. Molecules 2023; 28:7971. [PMID: 38138462 PMCID: PMC10745316 DOI: 10.3390/molecules28247971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Revised: 11/22/2023] [Accepted: 11/30/2023] [Indexed: 12/24/2023] Open
Abstract
Tin selenide (SnSe) holds great potential for abundant future applications, due to its exceptional properties and distinctive layered structure, which can be modified using a variety of techniques. One of the many tuning techniques is pressure manipulating using the diamond anvil cell (DAC), which is a very efficient in situ and reversible approach for modulating the structure and physical properties of SnSe. We briefly summarize the advantages and challenges of experimental study using DAC in this review, then introduce the recent progress and achievements of the pressure-induced structure and performance of SnSe, especially including the influence of pressure on its crystal structure and optical, electronic, and thermoelectric properties. The overall goal of the review is to better understand the mechanics underlying pressure-induced phase transitions and to offer suggestions for properly designing a structural pattern to achieve or enhanced novel properties.
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Affiliation(s)
- Ziwei Cheng
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Jian Zhang
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Lin Lin
- School of Agricultural Engineering and Food Science, Shandong University of Technology, Zibo 255000, China;
- Key Laboratory of Wooden Materials Science and Engineering of Jilin Province, Beihua University, Jilin 132013, China
| | - Zhiwen Zhan
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Yibo Ma
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Jia Li
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Shenglong Yu
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Hang Cui
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;
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Morozova NV, Korobeynikov IV, Miyajima N, Ovsyannikov SV. Giant Room-Temperature Power Factor in p-Type Thermoelectric SnSe under High Pressure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103720. [PMID: 35187810 PMCID: PMC9284162 DOI: 10.1002/advs.202103720] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2021] [Revised: 01/18/2022] [Indexed: 05/29/2023]
Abstract
Materials that can efficiently convert heat into electricity are widely utilized in energy conversion technologies. The existing thermoelectrics demonstrate rather limited performance characteristics at room temperature, and hence, alternative materials and approaches are very much in demand. Here, it is experimentally shown that manipulating an applied stress can greatly improve a thermoelectric power factor of layered p-type SnSe single crystals up to ≈180 µW K-2 cm-1 at room temperature. This giant enhancement is explained by a synergetic effect of three factors, such as: band-gap narrowing, Lifshitz transition, and strong sample deformation. Under applied pressure above 1 GPa, the SnSe crystals become more ductile, which can be related to changes in the prevailing chemical bonding type inside the layers, from covalent toward metavalent. Thus, the SnSe single crystals transform into a highly unconventional crystalline state in which their layered crystal stacking is largely preserved, while the layers themselves are strongly deformed. This results in a dramatic narrowing in a band gap, from Eg = 0.83 to 0.50 eV (at ambient conditions). Thus, the work demonstrates a novel strategy of improving the performance parameters of chalcogenide thermoelectrics via tuning their chemical bonding type, stimulating a sample deformation and a band-structure reconstruction.
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Affiliation(s)
- Natalia V. Morozova
- M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences18 S. Kovalevskaya Str.Yekaterinburg620137Russia
| | - Igor V. Korobeynikov
- M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences18 S. Kovalevskaya Str.Yekaterinburg620137Russia
| | - Nobuyoshi Miyajima
- Bayerisches GeoinstitutUniversität BayreuthUniversitätsstrasse 30BayreuthD‐95447Germany
| | - Sergey V. Ovsyannikov
- Bayerisches GeoinstitutUniversität BayreuthUniversitätsstrasse 30BayreuthD‐95447Germany
- Institute for Solid State Chemistry of Ural Branch of Russian Academy of Sciences91 Pervomayskaya Str.Yekaterinburg620219Russia
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Matsumoto R, Terashima K, Nakano S, Nakamura K, Yamamoto S, Yamamoto TD, Ishikawa T, Adachi S, Irifune T, Imai M, Takano Y. High-Pressure Synthesis of Superconducting Sn 3S 4 Using a Diamond Anvil Cell with a Boron-Doped Diamond Heater. Inorg Chem 2022; 61:4476-4483. [PMID: 35226490 DOI: 10.1021/acs.inorgchem.2c00013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
High-pressure techniques open exploration of functional materials in broad research fields. An established diamond anvil cell with a boron-doped diamond heater and transport measurement terminals has performed the high-pressure synthesis of a cubic Sn3S4 superconductor. X-ray diffraction and Raman spectroscopy reveal that the Sn3S4 phase is stable in the pressure range of P > 5 GPa in a decompression process. Transport measurement terminals in the diamond anvil cell detect a metallic nature and superconductivity in the synthesized Sn3S4 with a maximum onset transition temperature (Tconset) of 13.3 K at 5.6 GPa. The observed pressure-Tc relationship is consistent with that from the first-principles calculation. The observation of superconductivity in Sn3S4 opens further materials exploration under high-temperature and -pressure conditions.
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Affiliation(s)
- Ryo Matsumoto
- International Center for Young Scientists (ICYS), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Kensei Terashima
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Satoshi Nakano
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Kazuki Nakamura
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan.,University of Tsukuba, Ibaraki 305-8577, Japan
| | - Sayaka Yamamoto
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan.,University of Tsukuba, Ibaraki 305-8577, Japan
| | - Takafumi D Yamamoto
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Takahiro Ishikawa
- Elements Strategy Initiative Center for Magnetic Materials (ESICMM), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Shintaro Adachi
- Nagamori Institute of Actuators, Kyoto University of Advanced Science, Ukyo-ku, Kyoto 615-8577, Japan
| | - Tetsuo Irifune
- Geodynamics Research Center (GRC), Ehime University, Matsuyama, Ehime 790-8577, Japan
| | - Motoharu Imai
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Yoshihiko Takano
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan.,University of Tsukuba, Ibaraki 305-8577, Japan
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Mandava S, Bisht N, Saini A, Kumar Bairwa M, Bayikadi K, Katre A, Sonnathi N. Investigating the key role of carrier transport mechanism in SnSe nanoflakes with enhanced thermoelectric power factor. NANOTECHNOLOGY 2022; 33:155710. [PMID: 34952536 DOI: 10.1088/1361-6528/ac4665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2021] [Accepted: 12/23/2021] [Indexed: 06/14/2023]
Abstract
A novel SnSe nanoflake system is explored for its thermoelectric properties from both experiments andab initiostudy. The nanoflakes of the low temperature phase of SnSe (Pnma) are synthesized employing a fast and efficient refluxing method followed by spark plasma sintering at two different temperatures. We report an enhanced power factor (12-67μW mK-2in the temperature range 300-600 K) in our p-type samples. We find that the prime reason for a high PF in our samples is a significantly improved electrical conductivity (1050-2180 S m-1in the temperature range 300-600 K). From ourab initioband structure calculations accompanied with the models of temperature and surface dependent carrier scattering mechanisms, we reveal that an enhanced electrical conductivity is due to the reduced carrier-phonon scattering in our samples. The transport calculations are performed using the Boltzmann transport equation within relaxation time approximation. With our combined experimental and theoretical study, we demonstrate that the thermoelectric properties of p-type Pnma-SnSe could be improved by tuning the carrier scattering mechanisms with a control over the spark plasma sintering temperature.
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Affiliation(s)
- Srikanth Mandava
- University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Delhi-110078, India
| | - Neeta Bisht
- Department of Scientific Computing, Modeling and Simulation, Savitribai Phule Pune University, Pune-411007, India
| | - Anjali Saini
- University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Delhi-110078, India
| | - Mukesh Kumar Bairwa
- University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Delhi-110078, India
| | | | - Ankita Katre
- Department of Scientific Computing, Modeling and Simulation, Savitribai Phule Pune University, Pune-411007, India
| | - Neeleshwar Sonnathi
- University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Delhi-110078, India
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