Doping free transfer of graphene using aqueous ammonia flow

In-Situ Growth of Graphene Films to Improve Sensing Performances

Graphene films made by chemical vapor deposition (CVD) are a popular method to modify sensors by virtue of large-scale and reproducibility, but suffer from various surface contamination and structural defects induced during transfer procedures. In-situ growth of graphene films is proposed in this review article to improve sensing performance. Root causes of the surface contamination and structural defects are revealed with several common transfer methods. In-situ approaches are introduced and compared, growing graphene films with clean surfaces and few defects. This allows graphene film to display superior sensing performance for sensor applications. This work may reasonably be expected to offer a good avenue for synthesis of graphene films applicable for sensing applications.

Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor

In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry.