Nonlayered 2D ultrathin molybdenum nitride synthesized through the ammonolysis of 2D molybdenum dioxide

Mo5N6 nanosheets for fluorescent quenching and target recognition: Highly selectively sensing of sodium hexametaphosphate

Typical fluorescent biosensors use fluorescently labeled ssDNA for target recognition and nanomaterials for signal transduction. Herein, we propose a reverse sensing strategy that Mo5N6 nanosheets are used for target recognition while fluorescein (FAM)-labeled ssDNA only serves for signal generation. We discover that Mo5N6 nanosheets show high fluorescence quenching ability (>95%) and selective recognition for sodium hexametaphosphate (SHMP). After FAM-labeled ssDNA is adsorbed on Mo5N6 nanosheets, the fluorescence is quenched due to the photoinduced electron transfer (PET) effect between FAM and Mo5N6 nanosheets. SHMP can specifically displace the adsorbed FAM-labeled ssDNA from Mo5N6 nanosheets, resulting in more than 80% fluorescence recovery on addition of 5 μmol L-1 SHMP. This biosensor can sensitively detect SHMP down to 150 nmol L-1 and selectively recognize SHMP over glucose, lactose, common amino acids, Zn2+, Mg2+, Ca2+ and other phosphates (such as Na2HPO4, sodium pyrophosphate, sodium tripolyphosphate). This biosensor also shows great potential for the detection of SHMP in bacon sample. This work not only provides a facile sensitive and selective biosensor for SHMP but also exploits the application of transition metal nitrides in the field of sensing and biosensing.

Porous Molybdenum Nitride Nanosphere as Carrier-Free and Efficient Nitric Oxide Donor for Synergistic Nitric Oxide and Chemo/Sonodynamic Therapy

Given its abundant physiological functions, nitric oxide (NO) has attracted much attention as a cancer therapy. The sensitive release and great supply capacity are significant indicators of NO donors and their performance. Here, a transition metal nitride (TMN) MoN@PEG is adopted as an efficient NO donor. The release process starts with H+-triggered denitrogen owing to the high electronegativity of the N atom and weak Mo-N bond. Then, these active NHx are oxidized by O2 and other reactive oxygen species (ROS) to form NO, endowing specific release to the tumor microenvironment (TME). With a porous nanosphere structure (80 nm), MoN@PEG does not require an extra carrier for NO delivery, contributing to ultrahigh atomic utilization for outstanding release ability (94.1 ± 5.6 μM). In addition, it can also serve as a peroxidase and sonosensitizer for anticancer treatment. To further improve the charge separation, MoN-Pt@PEG was prepared to enhance the sonodynamic therapy (SDT) effect. Accordingly, ultrasound (US) further promotes NO generation due to more ROS generation, facilitating in situ peroxynitrite (·ONOO-) generation with great cytotoxicity. At the same time, the nanostructure also degrades gradually, leading to high elimination (94.6%) via feces and urine within 14-day. The synergistic NO and chemo-/sono-dynamic therapy brings prominent antitumor efficiency and further activates the immune response to inhibit metastasis and recurrence. This work develops a family of NO donors that would further widen the application of NO therapy in other fields.

p-Type Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications

Two-dimensional (2D) materials are regarded as promising candidates in many applications, including electronics and optoelectronics, because of their superior properties, including atomic-level thickness, tunable bandgaps, large specific surface area, and high carrier mobility. In order to bring 2D materials from the laboratory to industrialized applications, materials preparation is the first prerequisite. Compared to the n-type analogs, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in practical applications such as complementary logic circuits. So far, many efforts have been made in the preparation of p-type 2D semiconductors. In this review, we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top-down and bottom-up strategies. Then, we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their superiorities. In end, we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors, their controlled mass preparation, compatible engineering with silicon production line, high-κ dielectric materials, to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic devices. Overall, we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics.

Porous Molybdenum Compound Design for Strong Microwave Absorption

Exploring highly efficient microwave absorption (MA) materials with a facile preparation method is of great significance for tackling electromagnetic pollution and remains a challenge. Herein, ternary MoO₂/Mo₂C/Mo₂N composites with porous structures are fabricated by a simple precursor pyrolysis process. The unique structure and multiple components, which could generate sufficient heterogeneous interfaces, are conducive to improve impedance matching, trigger polarization loss, and strengthen conduction loss. Profiting from the synergistic effect of multiple dissipation mechanisms, the composites exhibit exceedingly good MA performance. The minimum reflection loss value reaches -38.0 dB at 10.4 GHz when the thickness is 2.0 mm, and the maximum effective absorbing bandwidth is 4.11 GHz ranged from 12.41 to 16.52 GHz when the thickness is 1.5 mm. These strategies pave opportunities for rational design of Mo-related composites for high-efficiency electromagnetic-wave absorption performance.

Folic acid functionalized molybdenum oxide quantum dots for the detection of Cu2+ ion and alkaline phosphatase via fluorescence turn off-on mechanism

The assay of alkaline phosphatase (ALP) plays a key role in the diagnosis of various diseases. Herein, folic acid functionalized molybdenum oxide quantum dots (FA-MoO_x QDs) are explored as fluorescence "turn- off and on" probes for assaying of Cu²⁺ ion and ALP, respectively. This fluorescence sensing strategy was based on the quenching of emission peak of FA-MoO_x QDs at 445 nm by Cu²⁺ ion, followed by restoring of emission peak selectively with ALP. Based on the quenching and restoring of FA-MoO_x QDs emission intensity, quantitative assay was developed for the detection of Cu²⁺ ion (0.20 - 500 µM) and ALP (0.06 - 150 U/L) with detection limits of 29 nM and 0.026 U/L, respectively. The developed FA-MoO_x QDs-based fluorescence "turn- off and on" strategy exhibited satisfactory results for assaying of ALP in biofluids.

DFT Investigation of Ammonia Formation via a Langmuir-Hinshelwood Mechanism on Mo-Terminated δ-MoN(0001)

In this work, we employed density functional theory to elucidate the energetics associated with elementary steps along a Langmuir-Hinshelwood mechanism for the Haber-Bosch synthesis of ammonia from N₂ and H₂ on a hexagonal, Mo-terminated molybdenum nitride surface. Using nudged elastic band calculations, we determined the energy barriers involved in the reaction processes. An active site consisting of four nearest-neighbor Mo atoms, previously identified as an active site on similar surfaces, was chosen to investigate the reaction processes. Using this approach, we calculate a barrier of ∼0.5 eV for the dissociation of N₂. The superior activity of the dissociation of the strong N₂ bonds is rationalized based on the unique geometric and electronic configurations present at these active sites. Despite the favorable energetics for nitrogen dissociation, the energy cost for hydrogenation of NH _x (0 ≤ x ≤ 2) species is shown to be energetically limiting for the formation of ammonia through the Langmuir-Hinshelwood mechanism at these sites, with elementary step activation barriers calculated to be as large as ∼2 eV. A comparison to Haber-Bosch results derived from a similar γ-Mo₂N model system suggests the relative independence of surface chemistry and bulk stoichiometry for rhombic Mo₄ active sites present on molybdenum nitrides.