Stability and gas sensing properties of Ta2X3M8 (X = Pd, Pt; M = S, Se) nanoribbons: a first-principles investigation

Tailoring Contacts for High-Performance 1D Ta2Pt3S8 Field-Effect Transistors

Materials with van der Waals (vdW) unit structures rely on weak interunit vdW forces, facilitating physical separation and advancing nanomaterial research with remarkable electrical properties. Recently, there has been growing interest in one-dimensional (1D) vdW materials, celebrated for their advantageous properties, characterized by reduced dimensionality and the absence of dangling bonds. In this context, we synthesize Ta2Pt3S8, a 1D vdW material, and assess its suitability for field-effect transistor (FET) applications. Spectroscopic analysis and electrical characterization confirmed that the band gap and work function of Ta2Pt3S8 are 1.18 and 4.77 eV, respectively. Leveraging various electrode materials, we fabricated n-type FETs based on Ta2Pt3S8 and identified Cr as the optimal electrode, exhibiting a high mobility of 57 cm2 V-1 s-1. In addition, we analyzed the electron transport mechanism in n-type FETs by investigating Schottky barrier height, Schottky barrier tunneling width, and contact resistance. Furthermore, we successfully fabricated p-type operating Ta2Pt3S8 FETs using a molybdenum trioxide (MoO3) layer as a high work function contact electrode. Finally, we achieved Ta2Pt3S8 nanowire rectifying diodes by creating a p-n junction with asymmetric contact electrodes of Cr and MoO3, demonstrating an ideality factor of 1.06. These findings highlight the electronic properties of Ta2Pt3S8, positioning it as a promising 1D vdW material for future nanoelectronics and functional vdW-based device applications.

Emerging quasi-one-dimensional material NbS4 with high carrier mobility and good visible-light adsorption performance for nanoscale applications

Due to their unique structure, abundant properties and potential applications, low-dimensional materials with covalently bonded building blocks through van der Waals (vdW) interactions have sparked widespread interest. Recently, the bulk phase NbS4 consisting of one-dimensional (1D) chains has been synthesized successfully, adding a new member to the group V metallic polychalcogenide family. In the present study, based on density functional theory calculations, we obtained a better understanding of the stability, mechanical properties, electronic structures, transport properties and optical performances of the bulk phase NbS4. Furthermore, the possibility of exfoliating 1D single-chain nanowires from the bulk phase was uncovered. Both bulk phase and 1D nanowires show dynamic, thermal, and mechanical stabilities. The bulk phase possesses an indirect band gap of 1.39 eV with high anisotropic carrier mobilities of 471.814 cm2 s-1 v-1 for electrons (along the b axis direction) and 546.92 cm2 s-1 v-1 for holes (along the a axis direction). The single-chain nanowire exhibits remarkable flexibility and can resist 24% tensile strain along the chain direction. The decreased dimension from the bulk phase to the individual 1D chain not only makes the band gap increase to 1.81 eV but also results in an indirect-to-direct band gap transition, indicating a strong quantum confinement effect. The 1D single-chain nanowire also shows high carrier mobilities of 111.91 cm2 s-1 v-1 for electrons and 316.63 cm2 s-1 v-1 for holes along the chain direction. In addition, both bulk phase and 1D nanowire display excellent visible light absorption performance along the chain direction and the absorption coefficients reach the order of 106 and 105 cm-1. These promising properties render quasi 1D NbS4 as candidate materials for nanoscale applications in high-performance optoelectronic and nanoelectronic devices. The predicted unconventional properties of NbS4 not only provide a meaningful complement to the fascinating quasi 1D material family, but also will attract extensive interest from a wide audience to explore unanticipated properties and design new nanoscale devices based on NbS4.

1D group V-VI-VII ternary nanowires: moderate band gaps, easy to exfoliate from bulk, and unexpected ferroelectricity

One-dimensional nanowires have emerged as compelling ideal materials due to their characteristic structure, properties, and applications in nanodevices. Herein, based on experimental vdW-chain bulk crystals, a series of one-dimensional (1D) X^VY^VIZ^VII (X = As, Sb, Bi; Y = S, Se, Te; Z = Cl, Br, I) ternary nanowires are theoretically investigated. Such exfoliated 1D nanowires possess excellent stability and moderate band gaps (1.76-3.16 eV). The calculated electron mobilities were found to reach a magnitude of 10² cm² V^-1 s^-1 and even up to 322.95 cm² V^-1 s^-1 for 1D BiSeI nanowires, which are much larger than those of the previously reported 1D materials. Furthermore, the appropriate band edge alignments and considerable optical absorption endow 1D X^VY^VIZ^VII nanowires with prospective photocatalytic properties for water splitting. Notably, AsSI and AsSeI nanowires possess a unique non-centrosymmetric structure and exhibit promising 1D ferroelectricity. Large spontaneous polarization values, P_s, of 11.31 × 10^-10 and 6.92 × 10^-10 C m^-1 are obtained for 1D AsSI and AsSeI nanowires, respectively, and such 1D ferroelectricity can be regulated by intra-chain strains. Our calculations not only broaden the family of 1D materials but also reveal their great potential applications in electronic, optoelectronic, and ferroelectric devices.

Computational Design of Gas Sensors Based on V3S4 Monolayer

Novel magnetic gas sensors are characterized by extremely high efficiency and low energy consumption, therefore, a search for a two-dimensional material suitable for room temperature magnetic gas sensors is a critical task for modern materials scientists. Here, we computationally discovered a novel ultrathin two-dimensional antiferromagnet V₃S₄, which, in addition to stability and remarkable electronic properties, demonstrates a great potential to be applied in magnetic gas sensing devices. Quantum-mechanical calculations within the DFT + U approach show the antiferromagnetic ground state of V₃S₄, which exhibits semiconducting electronic properties with a band gap of 0.36 eV. A study of electronic and magnetic response to the adsorption of various gas agents showed pronounced changes in properties with respect to the adsorption of NH₃, NO₂, O₂, and NO molecules on the surface. The calculated energies of adsorption of these molecules were −1.25, −0.91, −0.59, and −0.93 eV, respectively. Obtained results showed the prospective for V₃S₄ to be used as effective sensing materials to detect NO₂ and NO, for their capture, and for catalytic applications in which it is required to lower the dissociation energy of O₂, for example, in oxygen reduction reactions. The sensing and reducing of NO₂ and NO have great importance for improving environmental protection and sustainable development.