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Lei Y, Xie X, Ma H, Ma J. Vitality of Intralayer Vibration in hBN for Effective Long-Range Interlayer Hole Transfer across High Barriers in MoSe 2/hBN/WSe 2 Heterostructures. J Phys Chem Lett 2023:11190-11199. [PMID: 38055859 DOI: 10.1021/acs.jpclett.3c03040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
Introducing the two-dimensional (2D) hexagonal boron nitride (hBN) between 2D transition metal dichalcogenide (TMD) layers promises convenient manipulation of the interlayer exciton (IX) and interlayer charge transfer in TMD/hBN/TMD heterostructures, while the role of inserted hBN layers during IX formation is controversial. Employing ab initio nonadiabatic molecular dynamics (NAMD) simulations and the electron-phonon coupling model, we systematically investigate interlayer hole transfer in MoSe2/WSe2 bilayers intercalated by hBN layers with various thicknesses. The conventional direct hole transfer from MoSe2 to WSe2 is decelerated by 2-3 orders of magnitude after the hBN insertion. Meanwhile, a novel channel intermediated by a deeper hole of WSe2 becomes dominant, where the intralayer shear mode of hBN plays a crucial role by reducing the energy barriers for this new channel. The unique role of hBN layers is revealed for the first time, enriching the knowledge of the underlying microscopic mechanisms and providing instructive guidance to practical van der Waals optoelectronic devices.
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Affiliation(s)
- Yuli Lei
- Key Laboratory of Mesoscopic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoyu Xie
- Qingdao Institute for Theoretical and Computational Sciences, Qingdao Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Haibo Ma
- Qingdao Institute for Theoretical and Computational Sciences, Qingdao Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Jing Ma
- Key Laboratory of Mesoscopic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
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2
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Liu XY, Chen WK, Fang WH, Cui G. Nonadiabatic Dynamics Simulations for Photoinduced Processes in Molecules and Semiconductors: Methodologies and Applications. J Chem Theory Comput 2023. [PMID: 37984502 DOI: 10.1021/acs.jctc.3c00960] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
Nonadiabatic dynamics (NAMD) simulations have become powerful tools for elucidating complicated photoinduced processes in various systems from molecules to semiconductor materials. In this review, we present an overview of our recent research on photophysics of molecular systems and periodic semiconductor materials with the aid of ab initio NAMD simulation methods implemented in the generalized trajectory surface-hopping (GTSH) package. Both theoretical backgrounds and applications of the developed NAMD methods are presented in detail. For molecular systems, the linear-response time-dependent density functional theory (LR-TDDFT) method is primarily used to model electronic structures in NAMD simulations owing to its balanced efficiency and accuracy. Moreover, the efficient algorithms for calculating nonadiabatic coupling terms (NACTs) and spin-orbit couplings (SOCs) have been coded into the package to increase the simulation efficiency. In combination with various analysis techniques, we can explore the mechanistic details of the photoinduced dynamics of a range of molecular systems, including charge separation and energy transfer processes in organic donor-acceptor structures, ultrafast intersystem crossing (ISC) processes in transition metal complexes (TMCs), and exciton dynamics in molecular aggregates. For semiconductor materials, we developed the NAMD methods for simulating the photoinduced carrier dynamics within the framework of the Kohn-Sham density functional theory (KS-DFT), in which SOC effects are explicitly accounted for using the two-component, noncollinear DFT method. Using this method, we have investigated the photoinduced carrier dynamics at the interface of a variety of van der Waals (vdW) heterojunctions, such as two-dimensional transition metal dichalcogenides (TMDs), carbon nanotubes (CNTs), and perovskites-related systems. Recently, we extended the LR-TDDFT-based NAMD method for semiconductor materials, allowing us to study the excitonic effects in the photoinduced energy transfer process. These results demonstrate that the NAMD simulations are powerful tools for exploring the photodynamics of molecular systems and semiconductor materials. In future studies, the NAMD simulation methods can be employed to elucidate experimental phenomena and reveal microscopic details as well as rationally design novel photofunctional materials with desired properties.
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Affiliation(s)
- Xiang-Yang Liu
- College of Chemistry and Material Science, Sichuan Normal University, Chengdu 610068, P. R. China
| | - Wen-Kai Chen
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Wei-Hai Fang
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
- Hefei National Laboratory, Hefei 230088, P. R. China
| | - Ganglong Cui
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
- Hefei National Laboratory, Hefei 230088, P. R. China
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Yu W, Li F, Huang T, Li W, Wu T. Go beyond the limit: Rationally designed mixed-dimensional perovskite/semiconductor heterostructures and their applications. Innovation (N Y) 2022; 4:100363. [PMID: 36632191 PMCID: PMC9827388 DOI: 10.1016/j.xinn.2022.100363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Accepted: 12/18/2022] [Indexed: 12/24/2022] Open
Abstract
Halide perovskite heterojunctions rationally integrate the chemical and physical properties of multi-dimensional perovskites and judiciously chosen semiconductor materials, offering the promise of going beyond the limit of a single component. This emerging platform of materials innovation offers fresh opportunities to tune material properties, discover interesting phenomena, and enable novel applications. In this review, we first discuss the fundamentals of forming heterojunctions with perovskites and a wide range of semiconductors, and then we give an overview of the research progress of halide perovskite heterojunctions in terms of their optical, electrical, and mechanical properties, focusing on how the heterojunction tunes the energy band structure, electrical transport, and charge recombination behaviors. We further outline the progress of perovskite-based heterojunctions in optoelectronics. Finally, the challenges and future research directions for perovskite/semiconductor heterojunctions are discussed.
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Affiliation(s)
- Weili Yu
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China,Corresponding author
| | - Feng Li
- School of Physics, The University of Sydney, Sydney, NSW 2006, Australia,Corresponding author
| | - Tao Huang
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Wei Li
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia,Corresponding author
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Hu Z, Sun X. All-Atom Nonadiabatic Semiclassical Mapping Dynamics for Photoinduced Charge Transfer of Organic Photovoltaic Molecules in Explicit Solvents. J Chem Theory Comput 2022; 18:5819-5836. [PMID: 36073792 DOI: 10.1021/acs.jctc.2c00631] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Direct all-atom simulation of nonadiabatic dynamics in disordered condensed phases like liquid solutions and amorphous solids has been challenging. The first all-atom simulation of the photoinduced charge-transfer dynamics of a prototypical organic photovoltaic carotenoid-porphyrin-C60 molecular triad in explicit tetrahydrofuran is presented. Based on the Meyer-Miller mapping Hamiltonian, various semiclassical and mixed quantum-classical dynamics are employed, including the linearized semiclassical, symmetrical quasiclassical, mean-field Ehrenfest, classical mapping model, and spin-mapping model approaches. The all-atom nonadiabatic dynamics were compared to multi-state harmonic models with a globally shared bath, and the models built using the ensemble averages on the initial electronic state could reproduce the all-atom results. The solvent effect was found to be critical for the photoinduced charge transfer, and the time-dependent solute-solvent radial distribution functions revealed that only the nonadiabatic dynamics started with the effective forces on the initial electronic state could capture the correct nuclear dynamics. The proposed strategy for modeling condensed-phase nonadiabatic dynamics with atomistic details is readily applied to complex condensed-phase systems.
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Affiliation(s)
- Zhubin Hu
- Division of Arts and Sciences, New York University Shanghai, 1555 Century Avenue, Shanghai 200122, China.,NYU-ECNU Center for Computational Chemistry, New York University Shanghai, 3663 Zhongshan Road North, Shanghai 200062, China.,State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
| | - Xiang Sun
- Division of Arts and Sciences, New York University Shanghai, 1555 Century Avenue, Shanghai 200122, China.,NYU-ECNU Center for Computational Chemistry, New York University Shanghai, 3663 Zhongshan Road North, Shanghai 200062, China.,State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China.,Department of Chemistry, New York University, New York, New York 10003, United States
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Lei Y, Zheng Z, Vasquez L, Zhao J, Ma J, Ma H. Enhanced Electron Transfer and Spin Flip through Spin-Orbital Couplings in Organic/Inorganic Heterojunctions: A Nonadiabatic Surface Hopping Simulation. J Phys Chem Lett 2022; 13:4840-4848. [PMID: 35616399 DOI: 10.1021/acs.jpclett.2c01177] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The circumstances of transferred electrons across organic/inorganic interfaces have attracted intensive interest because of the distinctive electronic structure properties of those two components. Leveraging ab initio nonadiabatic molecular dynamics methods in conjunction with spin dynamics induced by spin-orbital couplings (SOCs), this study reports two competitive channels during photoinduced dynamical processes in the prototypical ZnPc/monolayer MoS2 heterojunction. Interestingly, the electron-transfer and relaxation processes occur simultaneously because of the enhancement of electron-phonon couplings and expansion of dynamical pathways by SOCs, suggesting that the electron-transfer rate and relaxation processes can be tuned by SOCs, hence yielding the performance promotion of photovoltaic and photocatalytic devices. Additionally, approximately half of the transferred electrons flip their spin within 1.6 ps because of strong SOCs in MoS2, achieving great agreement with experimental measurements. This investigation provides instructive perspectives for designing novel devices and applications based on organic/inorganic heterojunctions, demonstrating the importance of spin dynamics simulations in exploring sophisticated photoinduced processes in materials.
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Affiliation(s)
- Yuli Lei
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Zhenfa Zheng
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Luis Vasquez
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Jin Zhao
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jing Ma
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Haibo Ma
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
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Xie BB, Jia PK, Wang KX, Chen WK, Liu XY, Cui G. Generalized Ab Initio Nonadiabatic Dynamics Simulation Methods from Molecular to Extended Systems. J Phys Chem A 2022; 126:1789-1804. [PMID: 35266391 DOI: 10.1021/acs.jpca.1c10195] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Nonadiabatic dynamics simulation has become a powerful tool to describe nonadiabatic effects involved in photophysical processes and photochemical reactions. In the past decade, our group has developed generalized trajectory-based ab initio surface-hopping (GTSH) dynamics simulation methods, which can be used to describe a series of nonadiabatic processes, such as internal conversion, intersystem crossing, excitation energy transfer and charge transfer of molecular systems, and photoinduced nonadiabatic carrier dynamics of extended systems with and without spin-orbit couplings. In this contribution, we will first give a brief introduction to our recently developed methods and related numerical implementations at different computational levels. Later, we will present some of our latest applications in realistic systems, which cover organic molecules, biological proteins, organometallic compounds, periodic organic and inorganic materials, etc. Final discussion is given to challenges and outlooks of ab initio nonadiabatic dynamics simulations.
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Affiliation(s)
- Bin-Bin Xie
- Hangzhou Institute of Advanced Studies, Zhejiang Normal University, 1108 Gengwen Road, Hangzhou 311231, Zhejiang, P. R. China
| | - Pei-Ke Jia
- Hangzhou Institute of Advanced Studies, Zhejiang Normal University, 1108 Gengwen Road, Hangzhou 311231, Zhejiang, P. R. China
| | - Ke-Xin Wang
- Hangzhou Institute of Advanced Studies, Zhejiang Normal University, 1108 Gengwen Road, Hangzhou 311231, Zhejiang, P. R. China
| | - Wen-Kai Chen
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Xiang-Yang Liu
- College of Chemistry and Material Science, Sichuan Normal University, Chengdu 610068, Sichuan, P. R. China
| | - Ganglong Cui
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
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7
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Ab initio Nonadiabatic Dynamics of Semiconductor Nanomaterials via Surface Hopping Method. CHINESE J CHEM PHYS 2022. [DOI: 10.1063/1674-0068/cjcp2111247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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