Gold nanoparticle assembly on porous silicon by pulsed laser induced dewetting

Formation of Au, Pt, and bimetallic Au-Pt nanostructures from thermal dewetting of single-layer or bilayer thin films

Formation of Au, Pt, and bimetallic Au-Pt nanostructures by thermal dewetting of single-layer Au, Pt and bilayer Au-Pt thin films on Si substrates was systematically studied. The solid-state dewetting of both single-layer and bilayer metallic films was shown to go through heterogeneous void initiation followed by void growth via capillary agglomeration. For the single-layer of Au and Pt films, the void growth started at a temperature right above the Hüttig temperature, at which the atoms at the surface or at defects become mobile. Uniformly distributed Au (7 ± 1 nm to 33 ± 8 nm) and Pt (7 ± 1 nm) NPs with monodispersed size distributions were produced from complete dewetting achieved for thinner 1.7-5.5 nm thick Au and 1.4 nm thick Pt films, respectively. The NP size is strongly dependent on the initial thin film thickness, but less so on temperature and time. Thermal dewetting of Au-Pt bilayer films resulted in partial dewetting only, forming isolated nano-islands or large particles, regardless of sputtering order and total thin film thickness. The increased resistance to thermal dewetting shown in the Au-Pt bilayer films as compared to the individual Au or Pt layer is a reflection of the stabilizing effect that occurs upon adding Pt to Au in the bimetallic system. Energy dispersive x-ray spectroscopic analysis showed that the two metals in the bilayer films broke up together instead of dewetting individually. According to the x-ray diffraction analysis, the produced Au-Pt nanostructures are phase-segregated, consisting of an Au-rich phase and a Pt-rich phase.

Subtractive Low-Temperature Preparation Route for Porous SiO2 Used for the Catalyst-Assisted Growth of ZnO Field Emitters

The possibility to gradually increase the porosity of thin films facilitates a variety of applications, such as anti-reflective coatings, diffusion membranes, and the herein investigated tailored nanostructuring of a substrate for subsequent self-assembly processes. A low-temperature (<160 °C) preparation route for porous silicon oxide (porSiO2) thin films with porosities of about 60% and effective refractive indices down to 1.20 is tailored for bulk as well as free-standing membranes. Subsequently, both substrate types are successfully employed for the catalyst-assisted growth of nanowire-like zinc oxide (ZnO) field emitters by metal organic chemical vapor deposition. ZnO nanowires can be grown with a large aspect ratio and exhibit a good thermal and chemical stability, which makes them excellent candidates for field emitter arrays. We present a method that allows for the direct synthesis of nanowire-like ZnO field emitters on free-standing membranes using a porSiO2 template. Besides the application of porSiO2 for the catalyst-assisted growth of nanostructures and their use as field emission devices, the herein presented general synthesis route for the preparation of low refractive index films on other than bulk substrates-such as on free-standing, ultra-thin membranes-may pave the way for the employment of porSiO2 in micro-electro-mechanical systems.

Pulsed laser-induced dewetting and thermal dewetting of Ag thin films for the fabrication of Ag nanoparticles

Two different dewetting methods, namely pulsed laser-induced dewetting (PLiD)-a liquid-state dewetting process and thermal dewetting (TD)-a solid-state dewetting process, have been systematically explored for Ag thin films (1.9-19.8 nm) on Si substrates for the fabrication of Ag nanoparticles (NPs) and the understanding of dewetting mechanisms. The effect of laser fluence and irradiation time in PLiD and temperature and duration in TD were investigated. A comparison of the produced Ag NP size distributions using the two methods of PLiD and TD has shown that both produce Ag NPs of similar size with better size uniformity for thinner films (<6 nm), whereas TD produced bigger Ag NPs for thicker films (≥8-10 nm) as compared to PLiD. As the film thickness increases, the Ag NP size distributions from both PLiD and TD show a deviation from the unimodal distributions, leading to a bimodal distribution. The PLiD process is governed by the mechanism of nucleation and growth of holes due to the formation of many nano-islands from the Volmer-Weber growth of thin films during the sputtering process. The investigation of thickness-dependent NP size in TD leads to the understanding of void initiation due to pore nucleation at the film-substrate interface. Furthermore, the linear dependence of NP size on thickness in TD provides direct evidence of fingering instability, which leads to the branched growth of voids.