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Himwas C, Yordsri V, Thanachayanont C, Chomdech S, Pumee W, Panyakeow S, Kanjanachuchai S. High verticality vapor-liquid-solid growth of GaAs 0.99Bi 0.01 nanowires using Ga-Bi assisted catalytic droplets. NANOSCALE ADVANCES 2024; 6:846-854. [PMID: 38298583 PMCID: PMC10825910 DOI: 10.1039/d3na00428g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Accepted: 10/24/2023] [Indexed: 02/02/2024]
Abstract
GaAsBi nanowires (NWs) are promising for optoelectronic applications in the near- and mid-infrared wavelengths due to the optical properties of the Bi-containing compound and the nanowire structure benefits. In general, synthesizing the GaAsBi NWs results in uncontrollable metamorphic structures and spontaneous Bi-containing droplets. Here, we explore the potential of using the droplets as catalysts to form GaAsBi nanowires (hence, the vapor-liquid-solid growth mechanism) on GaAs (111) substrates by molecular beam epitaxy. The GaAsBi NWs experience a two-step growth: Bi droplet deposition and GaAsBi nanowire growth. The optimal droplet deposition temperature (250 °C) is defined based on the droplet morphologies. The gradation of growth temperatures of GaAsBi NWs to 250 °C, 300 °C, and 350 °C results in high-aspect-ratio NWs, tilted NWs, and low-aspect-ratio NWs, respectively. Structural investigation shows that the optimal (low-aspect-ratio) NW has the composition of GaAs0.99Bi0.01 with the catalytic droplet of Ga0.99Bi0.01 decorated on its tip. Detailed structural analyses show that the Bi content progressively increases from the NW stem to the wire-substrate interface. The satisfying GaAsBi NW morphology does not warrant the expected superior optical results. Photoluminescence study suggests that the NW has a strong carrier thermalization from the NW stem to the wire-substrate interface influenced by the graded NW growth temperature profile.
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Affiliation(s)
- Chalermchai Himwas
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
| | - Visittapong Yordsri
- National Metal and Materials Technology Center, Thailand Science Park 114 Paholyothin Rd, Klong 1 Klong Luang Pathumthani 12120 Thailand
| | - Chanchana Thanachayanont
- National Metal and Materials Technology Center, Thailand Science Park 114 Paholyothin Rd, Klong 1 Klong Luang Pathumthani 12120 Thailand
| | - Saharat Chomdech
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
| | - Wenich Pumee
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
| | - Somsak Panyakeow
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
| | - Songphol Kanjanachuchai
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
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2
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Saerens G, Dursap T, Hesner I, Duong NMH, Solntsev AS, Morandi A, Maeder A, Karvounis A, Regreny P, Chapman RJ, Danescu A, Chauvin N, Penuelas J, Grange R. Background-Free Near-Infrared Biphoton Emission from Single GaAs Nanowires. NANO LETTERS 2023; 23:3245-3250. [PMID: 37057961 PMCID: PMC10141417 DOI: 10.1021/acs.nanolett.3c00026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/03/2023] [Revised: 04/12/2023] [Indexed: 06/19/2023]
Abstract
The generation of photon pairs from nanoscale structures with high rates is still a challenge for the integration of quantum devices, as it suffers from parasitic signals from the substrate. In this work, we report type-0 spontaneous parametric down-conversion at 1550 nm from individual bottom-up grown zinc-blende GaAs nanowires with lengths of up to 5 μm and diameters of up to 450 nm. The nanowires were deposited on a transparent ITO substrate, and we measured a background-free coincidence rate of 0.05 Hz in a Hanbury-Brown-Twiss setup. Taking into account transmission losses, the pump fluence, and the nanowire volume, we achieved a biphoton generation of 60 GHz/Wm, which is at least 3 times higher than that of previously reported single nonlinear micro- and nanostructures. We also studied the correlations between the second-harmonic generation and the spontaneous parametric down-conversion intensities with respect to the pump polarization and in different individual nanowires.
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Affiliation(s)
- Grégoire Saerens
- ETH
Zurich, Department of Physics,
Institute for Quantum Electronics, Optical Nanomaterial Group, 8093 Zurich, Switzerland
| | - Thomas Dursap
- Univ.
Lyon, CNRS, ECL, INSA Lyon, UCBL, CPE Lyon, INL, UMR 5270, 69130 Ecully, France
| | - Ian Hesner
- ETH
Zurich, Department of Physics,
Institute for Quantum Electronics, Optical Nanomaterial Group, 8093 Zurich, Switzerland
| | - Ngoc M. H. Duong
- ETH
Zurich, Department of Physics,
Institute for Quantum Electronics, Optical Nanomaterial Group, 8093 Zurich, Switzerland
| | - Alexander S. Solntsev
- University
of Technology Sydney, School of Mathematical
and Physical Sciences, Ultimo, New South Wales 2007, Australia
| | - Andrea Morandi
- ETH
Zurich, Department of Physics,
Institute for Quantum Electronics, Optical Nanomaterial Group, 8093 Zurich, Switzerland
| | - Andreas Maeder
- ETH
Zurich, Department of Physics,
Institute for Quantum Electronics, Optical Nanomaterial Group, 8093 Zurich, Switzerland
| | - Artemios Karvounis
- ETH
Zurich, Department of Physics,
Institute for Quantum Electronics, Optical Nanomaterial Group, 8093 Zurich, Switzerland
| | - Philippe Regreny
- Univ.
Lyon, CNRS, ECL, INSA Lyon, UCBL, CPE Lyon, INL, UMR 5270, 69130 Ecully, France
| | - Robert J. Chapman
- ETH
Zurich, Department of Physics,
Institute for Quantum Electronics, Optical Nanomaterial Group, 8093 Zurich, Switzerland
| | - Alexandre Danescu
- Univ.
Lyon, CNRS, ECL, INSA Lyon, UCBL, CPE Lyon, INL, UMR 5270, 69130 Ecully, France
| | - Nicolas Chauvin
- Univ.
Lyon, CNRS, ECL, INSA Lyon, UCBL, CPE Lyon, INL, UMR 5270, 69130 Ecully, France
| | - José Penuelas
- Univ.
Lyon, CNRS, ECL, INSA Lyon, UCBL, CPE Lyon, INL, UMR 5270, 69130 Ecully, France
| | - Rachel Grange
- ETH
Zurich, Department of Physics,
Institute for Quantum Electronics, Optical Nanomaterial Group, 8093 Zurich, Switzerland
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3
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Becdelievre J, Guan X, Dudko I, Regreny P, Chauvin N, Patriarche G, Gendry M, Danescu A, Penuelas J. Growing self-assisted GaAs nanowires up to 80 μm long by molecular beam epitaxy. NANOTECHNOLOGY 2022; 34:045603. [PMID: 36270200 DOI: 10.1088/1361-6528/ac9c6b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Accepted: 10/20/2022] [Indexed: 06/16/2023]
Abstract
Ultralong GaAs nanowires were grown by molecular beam epitaxy using the vapor-liquid-solid method. In this ultralong regime we show the existence of two features concerning the growth kinetic and the structural properties. Firstly, we observed a non-classical growth mode, where the axial growth rate is attenuated. Secondly, we observed structural defects at the surface of Wurtzite segments located at the bottom part of the nanowires. We explain these two phenomena as arising from a particular pathway of the group V species, specific to ultralong nanowires. Finally, the optical properties of such ultralong nanowires are studied by photoluminescence experiments.
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Affiliation(s)
- Jeanne Becdelievre
- Univ Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon, CPE Lyon, INL, UMR5270, F69130 Ecully, France
| | - Xin Guan
- Univ Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon, CPE Lyon, INL, UMR5270, F69130 Ecully, France
| | - I Dudko
- Univ Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon, CPE Lyon, INL, UMR5270, F69130 Ecully, France
- School of Engineering, RMIT University, Melbourne 3001, Victoria, Australia
- Functional Materials and Microsystems, Research Group and Micro Nano Research Facility, RMIT University, Melbourne 3001, Victoria, Australia
| | - Philippe Regreny
- Univ Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon, CPE Lyon, INL, UMR5270, F69130 Ecully, France
| | - Nicolas Chauvin
- Univ Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon, CPE Lyon, INL, UMR5270, F69130 Ecully, France
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies-C2N, CNRS, Université Paris-Sud, Université Paris-Saclay, F-91120 Palaiseau, France
| | - Michel Gendry
- Univ Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon, CPE Lyon, INL, UMR5270, F69130 Ecully, France
| | - Alexandre Danescu
- Univ Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon, CPE Lyon, INL, UMR5270, F69130 Ecully, France
| | - José Penuelas
- Univ Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon, CPE Lyon, INL, UMR5270, F69130 Ecully, France
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4
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Hafez MA, Zayed MK, Elsayed-Ali HE. Review: Geometric Interpretation of Reflection and Transmission RHEED Patterns. Micron 2022; 159:103286. [DOI: 10.1016/j.micron.2022.103286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2021] [Revised: 04/11/2022] [Accepted: 04/12/2022] [Indexed: 10/18/2022]
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Himwas C, Yordsri V, Thanachayanont C, Tchernycheva M, Panyakeow S, Kanjanachuchai S. GaAs/GaAsPBi core-shell nanowires grown by molecular beam epitaxy. NANOTECHNOLOGY 2021; 33:095602. [PMID: 34781278 DOI: 10.1088/1361-6528/ac39ca] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Accepted: 11/15/2021] [Indexed: 06/13/2023]
Abstract
We report on the growth, structural, and optical properties of GaAs/GaAsPBi core-shell nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents advantageous optical properties, in particular, for near- and mid-infrared optical applications. Scanning electron microscopy shows that although the stems of GaAs/GaAsP and GaAs/GaAsBi core-shell NWs preserve the hexagonal prism shape, the GaAs/GaAsPBi core-shell NWs develop a quasi-three-fold orientational symmetry affected by the hexagonal prismatic core. Detailed structural analyses of a GaAs/GaAsPBi core-shell stem show that it crystallized with zincblende structure with a nominal shell composition of GaAs0.617P0.362Bi0.021. Photoluminescence of GaAs/GaAsPBi core-shell NWs shows the luminescent peak at 1.02 eV with high internal quantum efficiency at room temperature (IQERT∼ 6%) superior to those of MBE-grown GaAs core NWs and GaAsPBi multiple quantum wells earlier reported. Energy-dispersive x-ray spectroscopy performed on the GaAs/GaAsPBi core-shell NWs yields an estimated bandgap different from the optically measured value. We attribute this discrepancy to the NW compositional fluctuations that also may explain the high IQERT.
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Affiliation(s)
- C Himwas
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand
| | - V Yordsri
- National Metal and Materials Technology Center, Thailand Science Park, 114 Paholyothin Rd., Klong 1, Klong Luang, Pathumthani 12120, Thailand
| | - C Thanachayanont
- National Metal and Materials Technology Center, Thailand Science Park, 114 Paholyothin Rd., Klong 1, Klong Luang, Pathumthani 12120, Thailand
| | - M Tchernycheva
- Centre de Nanosciences et de Nanotechnologies, UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, F-91120 Palaiseau Cedex, France
| | - S Panyakeow
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand
| | - S Kanjanachuchai
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand
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6
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Jakob J, Schroth P, Feigl L, Al Humaidi M, Al Hassan A, Davtyan A, Hauck D, Pietsch U, Baumbach T. Correlating in situ RHEED and XRD to study growth dynamics of polytypism in nanowires. NANOSCALE 2021; 13:13095-13107. [PMID: 34477793 DOI: 10.1039/d1nr02320a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Design of novel nanowire (NW) based semiconductor devices requires deep understanding and technological control of NW growth. Therefore, quantitative feedback over the structure evolution of the NW ensemble during growth is highly desirable. We analyse and compare the methodical potential of reflection high-energy electron diffraction (RHEED) and X-ray diffraction reciprocal space imaging (XRD) for in situ growth characterization during molecular-beam epitaxy (MBE). Simultaneously recorded in situ RHEED and in situ XRD intensities show strongly differing temporal behaviour and provide evidence of the highly complementary information value of both diffraction techniques. Exploiting the complementarity by a correlative data analysis presently offers the most comprehensive experimental access to the growth dynamics of statistical NW ensembles under standard MBE growth conditions. In particular, the combination of RHEED and XRD allows for translating quantitatively the time-resolved information into a height-resolved information on the crystalline structure without a priori assumptions on the growth model. Furthermore, we demonstrate, how careful analysis of in situ RHEED if supported by ex situ XRD and scanning electron microscopy (SEM), all usually available at conventional MBE laboratories, can also provide highly quantitative feedback on polytypism during growth allowing validation of current vapour-liquid-solid (VLS) growth models.
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Affiliation(s)
- Julian Jakob
- Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße 12, D-76131 Karlsruhe, Germany.
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7
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Dursap T, Vettori M, Botella C, Regreny P, Blanchard N, Gendry M, Chauvin N, Bugnet M, Danescu A, Penuelas J. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy. NANOTECHNOLOGY 2021; 32:155602. [PMID: 33429384 DOI: 10.1088/1361-6528/abda75] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. Although cubic zinc-blende (ZB) GaAs is a well-established material in microelectronics, the controlled growth of hexagonal wurtzite (WZ) GaAs has thus far not been achieved successfully. Specifically, the prospect of growing defect-free and gold catalyst-free wurtzite GaAs would pave the way towards integration on silicon substrate and new device applications. In this article, we present a method to select and maintain the WZ crystal phase in self-assisted NWs by molecular beam epitaxy. By choosing a specific regime where the NW growth process is a self-regulated system, the main experimental parameter to select the ZB or WZ phase is the V/III flux ratio. Using an analytical growth model, we show that the V/III flux ratio can be finely tuned by changing the As flux, thus driving the system toward a stationary regime where the wetting angle of the Ga droplet can be maintained in the range of values allowing the formation of pure WZ phase. The analysis of the in situ reflection high energy electron diffraction evolution, combined with high-resolution scanning transmission electron microscopy (TEM), dark field TEM, and photoluminescence all confirm the control of an extended pure WZ segment, more than a micrometer long, obtained by molecular beam epitaxy growth of self- assisted GaAs NWs with a V/III flux ratio of 4.0. This successful controlled growth of WZ GaAs suggests potential benefits for electronics and opto-electronics applications.
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Affiliation(s)
- T Dursap
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - M Vettori
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - C Botella
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - P Regreny
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - N Blanchard
- Université de Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622 Villeurbanne, France
| | - M Gendry
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - N Chauvin
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, INSA de Lyon, 7 Avenue Jean Capelle F-69621, Villeurbanne Cedex, France
| | - M Bugnet
- Université de Lyon, INSA de Lyon, Université Claude Bernard Lyon 1, MATEIS, UMR 5510 CNRS, Avenue Jean Capelle, F-69621 Villeurbanne, France
| | - A Danescu
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - J Penuelas
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
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