Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties

Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

Semiconductor nanowires are considered as one of the most promising candidates for next-generation devices due to their unique quasi-one-dimensional structures and novel physical properties. In recent years, advanced heterostructures have been developed by combining nanowires with low-dimensional structures such as quantum wells, quantum dots, and two-dimensional materials. Those heterodimensional structures overcome the limitations of homogeneous nanowires and show great potential in high-performance nano-optoelectronic devices. In this review, we summarize and discuss recent advances in fabrication, properties and applications of nanowire heterodimensional structures. Major heterodimensional structures including nanowire/quantum well, nanowire/quantum dot, and nanowire/2D-material are studied. Representative optoelectronic devices including lasers, single photon sources, light emitting diodes, photodetectors, and solar cells are introduced in detail. Related prospects and challenges are also discussed.

Tuning the Colloidal Softness of CsPbBr3 Nanocrystals for Homogeneous Superlattices

Perovskite nanocrystal superlattices (NC SLs), made from millions of ordered crystals, support collective optoelectronic phenomena. Coupled NC emitters are highly sensitive to the structural and spectral inhomogeneities of the NC ensemble. Free electrons in scanning electron microscopy (SEM) are used to probe the cathodoluminescence (CL) properties of CsPbBr3 SLs with a ∼20 nm spatial resolution. Correlated CL-SEM measurements allow for simultaneous characterization of structural and spectral heterogeneities of the SLs. Hyperspectral CL mapping shows multipole emissive domains within a single SL. Consistently, the edges of the SLs are blue-shifted relative to the central domain by up to 65 meV. We discover a relation between NC building block colloidal softness and the extent of the CL shift. Residual uniaxial compressive strains accompanying SL formation are contributors to these emission shifts. Therefore, precise control over the colloidal softness of the NC building blocks is critical for SL engineering.

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitigation is of great interest in photovoltaics as it opens up more material combinations for use in devices. Herein, an overview of the vapor-liquid-solid and selective area epitaxy growth approaches applied to zinc phosphide (Zn3P2), an earth-abundant absorber material, is presented. First, we show how different morphologies, including nanowires, nanopyramids, and thin films, can be achieved by tuning the growth conditions and growth mechanisms. The growth conditions are also shown to greatly impact the defect structure and composition of the grown material, which can vary considerably from the ideal stoichiometry (Zn3P2). Finally, the functional properties are characterized. The direct band gap could accurately be determined at 1.50 ± 0.1 eV, and through complementary density functional theory calculations, we can identify a range of higher-order band gap transitions observed through valence electron energy loss spectroscopy and cathodoluminescence. Furthermore, we outline the formation of rotated domains inside of the material, which are a potential origin of defect transitions that have been long observed in zinc phosphide but not yet explained. The basic understanding provided reinvigorates the potential use of earth-abundant II-V semiconductors in photovoltaic technology. Moreover, the transferrable nanoscale growth approaches have the potential to be applied to other material systems, as they mitigate the constraints of substrate-material combinations causing interface defects.

Rotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality

Zinc phosphide (Zn3P2) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality material. It is possible to overcome these factors by obtaining the material as nanostructures, e.g. via the selective area epitaxy approach, enabling additional strain relaxation mechanisms and minimizing the interface area. We demonstrate that Zn3P2 nanowires grow mostly defect-free when growth is oriented along the [100] and [110] of the crystal, which is obtained in nanoscale openings along the [110] and [010] on InP(100). We detect the presence of two stable rotated crystal domains that coexist in the structure. They are due to a change in the growth facet, which originates either from the island formation and merging in the initial stages of growth or lateral overgrowth. These domains have been visualized through 3D atomic models and confirmed with image simulations of the atomic scale electron micrographs. Density functional theory simulations describe the rotated domains' formation mechanism and demonstrate their lattice-matched epitaxial relation. In addition, the energies of the shallow states predicted closely agree with transition energies observed by experimental studies and offer a potential origin for these defect transitions. Our study represents an important step forward in the understanding of Zn3P2 and thus for the realisation of solar cells to respond to the present call for sustainable photovoltaic technology.

Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (Zn3P2) nanowires

Earth-abundant and low-cost semiconductors, such as zinc phosphide (Zn₃P₂), are promising candidates for the next generation photovoltaic applications. However, synthesis on commercially available substrates, which favors the formation of defects, and controllable doping are challenging drawbacks that restrain device performance. Better assessment of relevant properties such as structure, crystal quality and defects will allow faster advancement of Zn₃P₂, and in this sense, Raman spectroscopy can play an invaluable role. In order to provide a complete Raman spectrum reference of Zn₃P₂, this work presents a comprehensive analysis of vibrational properties of tetragonally-structured Zn₃P₂ (space group P4₂/nmc) nanowires, from both experimental and theoretical perspectives. Low-temperature, high-resolution Raman polarization measurements have been performed on single-crystalline nanowires. Different polarization configurations have allowed selective enhancement of A_1g, B_1g and E_g Raman modes, while B_2g modes were identified from complementary unpolarized Raman measurements. Simultaneous deconvolution of all Raman spectra with Lorentzian curves has allowed identification of 33 peaks which have been assigned to 34 (8 A_1g + 9 B_1g + 3 B_2g + 14 E_g) out of the 39 theoretically predicted eigenmodes. The experimental results are in good agreement with the vibrational frequencies that have been computed by first-principles calculations based on density functional theory. Three separate regions were observed in the phonon dispersion diagram: (i) low-frequency region (<210 cm^-1) which is dominated by Zn-related vibrations, (ii) intermediate region (210-225 cm^-1) which represents a true phonon gap with no observed vibrations, and (iii) high-frequency region (>225 cm^-1) which is attributed to primarily P-related vibrations. The analysis of vibrational patterns has shown that non-degenerate modes involve mostly atomic motion along the long crystal axis (c-axis), while degenerate modes correspond primarily to in-plane vibrations, perpendicular to the long c-axis. These results provide a detailed reference for identification of the tetragonal Zn₃P₂ phase and can be used for building Raman based methodologies for effective defect screening of bulk materials and films, which might contain structural inhomogeneities.