Ultrafast Auger process in few-layer PtSe2

Direct Observation of Photon Induced Giant Band Renormalization in 2D PdSe2 Dichalcogenide by Transient Absorption Spectroscopy

Insight into fundamental light-matter interaction as well as underlying photo-physical processes is crucial for the development of novel optoelectronic devices. Palladium diselenide (PdSe2 ), an important representative of emerging 2D noble metal dichalcogenides, has gain considerable attention owing to its unique optical, physical, and chemical properties. In this study, 2D PdSe2 nanosheets (NSs) are prepared using the liquid-phase exfoliation method. A broadband carrier relaxation dynamics from visible to near-infrared bands are revealed using a time-resolved transient absorption spectrometer, giving results that indicate band filling and bandgap renormalization (BGR) effects in the 2D PdSe2 NSs. The observed blue-shift of the transient absorption spectra at the primary stage and the subsequent red-shift can be ascribed to this BGR effect. These findings reveal the many-body character of the 2D TMDs material and may hold keys for applications in the field of optoelectronics and ultrafast photonics.

Probing Carrier Dynamics in Large-Scale MBE-Grown PtSe2 Films by Terahertz Spectroscopy

Atomically thin platinum diselenide (PtSe2) films are promising for applications in the fields of electronics, spintronics, and photodetectors owing to their tunable electronic structure and high carrier mobility. Using terahertz (THz) spectroscopy techniques, we investigated the layer-dependent semiconducting-to-metallic phase transition and associated intrinsic carrier dynamics in large-scale PtSe2 films grown by molecular beam epitaxy. The uniformity of large-scale PtSe2 films was characterized by spatially and frequency-resolved THz-based sheet conductivity mapping. Furthermore, we use an optical-pump-THz-probe technique to study the transport dynamics of photoexcited carriers and explore light-induced intergrain carrier transport in PtSe2 films. We demonstrate large-scale THz-based mapping of the electrical properties of transition metal dichalcogenide films and show that the two noncontact THz-based approaches provide insight in the spatial and temporal properties of PtSe2 films.

Ultrafast carrier dynamics and layer-dependent carrier recombination rate in InSe

InSe layered semiconductors with high mobility have advantages over transition-metal dichalcogenides in certain device applications. Understanding the dynamics of carriers, especially around the major bandgaps, is not only of fundamental interest but also important for improving the performance of devices. We investigated ultrafast carrier dynamics in exfoliated InSe near the bandgap and found that the presence of photocarriers led to shrinkage in the optical bandgap. In addition, we observed that the carrier recombination rate increased when the thickness of the InSe nanoflakes was reduced and the process was dominated by surface recombination. For the same flakes, the recombination rate became lower after the freshly exfoliated InSe was exposed to air and oxidized. Using a free carrier diffusion model, layer-dependent surface recombination velocities were obtained. Our investigation reveals that the surface condition and the thickness of few-layer InSe play important roles in carrier lifetimes.

Defect-Induced Ultrafast Nonadiabatic Electron-Hole Recombination Process in PtSe2 Monolayer

Defects are inevitable in two-dimensional materials due to the growth condition, which results in many unexpected changes in materials' properties. Here, we have mainly discussed the nonradiative recombination dynamics of PtSe₂ monolayer without/with native point defects. Based on first-principles calculations, a shallow p-type defect state is introduced by a Se antisite, and three n-type defect states with a double-degenerate shallow defect state and a deep defect state are introduced by a Se vacancy. Significantly, these defect states couple strongly to the pristine valence band maximum and lead to the enhancement of the in-plane vibrational E_g mode. Both factors appreciably increase the nonadiabatic coupling, accelerating the electron-hole recombination process. An explanation of PtSe₂-based photodetectors with the slow response, compared to conventional devices, is provided by studying this nonradiative transitions process.

High output mode-locked laser empowered by defect regulation in 2D Bi2O2Se saturable absorber

Atomically thin Bi2O2Se has emerged as a novel two-dimensional (2D) material with an ultrabroadband nonlinear optical response, high carrier mobility and excellent air stability, showing great potential for the realization of optical modulators. Here, we demonstrate a femtosecond solid-state laser at 1.0 µm with Bi2O2Se nanoplates as a saturable absorber (SA). Upon further defect regulation in 2D Bi2O2Se, the average power of the mode-locked laser is improved from 421 mW to 665 mW, while the pulse width is decreased from 587 fs to 266 fs. Moderate Ar+ plasma treatments are employed to precisely regulate the O and Se defect states in Bi2O2Se nanoplates. Nondegenerate pump-probe measurements show that defect engineering effectively accelerates the trapping rate and defect-assisted Auger recombination rate of photocarriers. The saturation intensity is improved from 3.6 ± 0.2 to 12.8 ± 0.6 MW cm−2 after the optimized defect regulation. The enhanced saturable absorption and ultrafast carrier lifetime endow the high-performance mode-locked laser with both large output power and short pulse duration.

Ultrafast Dynamics of Defect-Assisted Auger Process in PdSe2 Films: Synergistic Interaction between Defect Trapping and Auger Effect

By using optical pump and terahertz probe spectroscopy, we have investigated the photocarrier dynamics in PdSe₂ films with different thicknesses. The experimental results reveal that the photocarrier relaxation consists of two components: a fast component of 2.5 ps that shows the layer-thickness independence and a slow component that has typical lifetime of 7.3 ps decreasing with the layer thickness. Interestingly, the relaxation times for both fast and slow components exhibited both pump fluence and temperature independence, which suggests that synergistic interactions between defect trapping and Auger effect dominate the photocarrier dynamics in PdSe₂ films. A model involving a defect-assisted Auger process is proposed, which can reproduce the experimental results well. The fitting results reveal that the layer-dependent lifetime is determined by the defect density rather than carrier occupancy rate after photoexcitation. Our results underscore the interplay between the Auger process and defects in two-dimensional semiconductors.

Optical Characterization of Few-Layer PtSe2 Nanosheet Films

Thin films of transition-metal dichalcogenides are potential materials for optoelectronic applications. However, the application of these materials in practice requires knowledge of their fundamental optical properties. Many existing methods determine optical constants using predefined models. Here, a different approach was used. We determine the sheet conductance and absorption coefficient of few-layer PtSe2 in the infrared and UV-vis ranges without recourse to any particular model for the optical constants. PtSe2 samples with a thickness of about 3-4 layers were prepared by selenization of 0.5 nm thick platinum films on sapphire substrates at different temperatures. Differential reflectance was extracted from transmittance and reflectance measurements from the front and back of the sample. The film thickness, limited to a few atomic layers, allowed a thin-film approximation to calculate the optical conductance and absorption coefficient. The former has a very different energy dependence in the infrared, near-infrared, and visible ranges. The absorption coefficient exhibits a strong power-law dependence on energy with an exponent larger than three in the mid-infrared and near-infrared regions. We have not observed any evidence for a band gap in PtSe2 thin layers down to an energy of 0.4 eV from our optical measurements.

Exciton-Dominated Ultrafast Optical Response in Atomically Thin PtSe2

Strongly bound excitons are a characteristic hallmark of 2D semiconductors, enabling unique light-matter interactions and novel optical applications. Platinum diselenide (PtSe₂ ) is an emerging 2D material with outstanding optical and electrical properties and excellent air stability. Bulk PtSe₂ is a semimetal, but its atomically thin form shows a semiconducting phase with the appearance of a band-gap, making one expect strongly bound 2D excitons. However, the excitons in PtSe₂ have been barely studied, either experimentally or theoretically. Here, the authors directly observe and theoretically confirm excitons and their ultrafast dynamics in mono-, bi-, and tri-layer PtSe₂ single crystals. Steady-state optical microscopy reveals exciton absorption resonances and their thickness dependence, confirmed by first-principles calculations. Ultrafast transient absorption microscopy finds that the exciton dominates the transient broadband response, resulting from strong exciton bleaching and renormalized band-gap-induced exciton shifting. The overall transient spectrum redshifts with increasing thickness as the shrinking band-gap redshifts the exciton resonance. This study provides novel insights into exciton photophysics in platinum dichalcogenides.

Recent progress in Van der Waals 2D PtSe2

As a new member in two-dimensional (2D) transition metal dichalcogenides (TMDCs) family, platinum diselenium (PtSe₂) has many excellent properties, such as the layer-dependent band gap, high carrier mobility, high photoelectrical coupling, broadband response, etc, thus it shows good promising application in room temperature photodetectors, broadband photodetectors, transistors and other fields. Furthermore, compared with other TMDCs, PtSe₂is chemical inert in ambient, showing nano-devices potential with higher performance and stability. However, up to now, the synthesis and its device applications are in its early stage. This review systematically summarized the state of the art of PtSe₂from its structure, property, synthesis and potential application. Finally, the current challenges and future perspectives are outlined for the applications of 2D PtSe₂.