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Ahmad S, Din HU, Sabir SSU, Amin B. First-principles study of BX-SiS (X = As, P) van der Waals heterostructures for enhanced photocatalytic performance. NANOSCALE ADVANCES 2023; 5:4598-4608. [PMID: 37638149 PMCID: PMC10448330 DOI: 10.1039/d3na00167a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/17/2023] [Accepted: 08/01/2023] [Indexed: 08/29/2023]
Abstract
The vertical integration of two-dimensional (2D) materials through weak van der Waals (vdW) interactions is gaining tremendous attention for application in nanotechnology and photovoltaics. Here, we performed first-principles study of the electronic band structure, optical and photocatalytic properties of vertically stacked heterostructures based on boron pnictides BX (X = As, P) and SiS monolayers. Both heterobilayers possess a stable geometry and reveal type I band alignment with a direct band gap, indicating substantial transfer of charge across the junction of the same layer. Interestingly, a redshift is found in the visible light region of the optical absorption spectra of BX-SiS heterobilayers. The comparatively larger hole mobility (14 000 cm2 V-1 s-1) of BP-SiS preferably allows hole conduction in the zigzag-direction. More importantly, the excellent band edge values of the standard redox potential and smaller Gibbs free energy for the adsorption of hydrogen (ΔGH*) make them ideal for performing the hydrogen evolution reaction (HER) mechanism under solar irradiation. These findings offer exciting opportunities for developing next-generation devices based on BX-SiS heterobilayers for promising applications in nanoelectronics, optoelectronic devices and photocatalysts for water dissociation into hydrogen to produce renewable clean energy.
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Affiliation(s)
- Sheraz Ahmad
- School of Materials Science and Engineering, Institute of New Energy Material Chemistry, Nankai University Tianjin 300350 P. R. China
| | - H U Din
- Computational Science Research Center, Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea
- Department of Physics, Bacha Khan University Charsadda KP Pakistan
| | - S S Ullah Sabir
- Department of Physics, Hazara University Mansehra KP Pakistan
| | - B Amin
- Department of Physics, Abbottabad University of Science and Technology Abbottabad KP Pakistan
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Mechanistic Study of CrS2/BP as a Direct Z-Scheme Heterojunction for Photocatalyst of Splitting Water Under Biaxial Strain. Catal Letters 2022. [DOI: 10.1007/s10562-022-04224-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Fayaz M, Muhammad S, Bashir K, Khan A, Alam Q, Amin B, Idrees M. Tunable optoelectronic and photocatalytic properties of BAs-BSe van der Waals heterostructures by strain engineering. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2022.111769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
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Stacking-Mediated Type-I/Type-II Transition in Two-Dimensional MoTe2/PtS2 Heterostructure: A First-Principles Simulation. CRYSTALS 2022. [DOI: 10.3390/cryst12030425] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
Recently, a two-dimensional (2D) heterostructure has been widely investigated as a photocatalyst to decompose water using the extraordinary type-II band structure. In this work, the MoTe2/PtS2 van der Waals heterostructure (vdWH) is constructed with different stacking structures. Based on density functional calculations, the stacking-dependent electronic characteristic is explored, so that the MoTe2/PtS2 vdWH possesses type-I and type-II band structures for the light-emitting device and photocatalyst, respectively, with decent stacking configurations. The band alignment of the MoTe2/PtS2 vdWH is also addressed to obtain suitable band edge positions for water-splitting at pH 0. Furthermore, the potential drop is investigated, resulting from charge transfer between the MoTe2 and PtS2, which is another critical promotion to prevent the recombination of the photogenerated charges. Additionally, the MoTe2/PtS2 vdWH also demonstrates a novel and excellent optical absorption capacity in the visible wavelength range. Our work suggests a theoretical guide to designing and tuning the 2D heterostructure using photocatalytic and photovoltaic devices.
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Peterson EA, Debela TT, Gomoro GM, Neaton JB, Asres GA. Electronic structure of strain-tunable Janus WSSe–ZnO heterostructures from first-principles. RSC Adv 2022; 12:31303-31316. [PMID: 36348994 PMCID: PMC9623559 DOI: 10.1039/d2ra05533c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Accepted: 10/25/2022] [Indexed: 11/06/2022] Open
Abstract
The electronic structure of semiconducting 2D materials such as monolayer transition metal dichalcogenides (TMDs) are known to be tunable via environment and external fields, and van der Waals (vdW) heterostructures consisting of stacks of distinct types of 2D materials offer the possibility to further tune and optimize the electronic properties of 2D materials. In this work, we use density functional theory (DFT) calculations to calculate the structure and electronic properties of a vdW heterostructure of Janus monolayer WSSe with monolayer ZnO, both of which possess out of plane dipole moments. The effects of alignment, biaxial and uniaxial strain, orientation, and electric field on dipole moments and band edge energies of this heterostructure are calculated and examined. We find that the out of plane dipole moment of the ZnO monolayer is highly sensitive to strain, leading to the broad tunability of the heterostructure band edge energies over a range of experimentally-relevant strains. The use of strain-tunable 2D materials to control band offsets and alignment is a general strategy applicable to other vdW heterostructures, one that may be advantageous in the context of clean energy applications, including photocatalytic applications, and beyond. Using strain engineering to optimize novel heterostructure materials to produce hydrogen from water.![]()
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Affiliation(s)
- E. A. Peterson
- Department of Physics, University of California Berkeley, Berkeley, CA 94720, USA
- Liquid Sunlight Alliance, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - T. T. Debela
- Institute for Application of Advanced Materials, Jeonju University, Conju, Chonbuk 55069, Republic of Korea
| | - G. M. Gomoro
- Faculty of Engineering and Technology, Mechanical Engineering Department, Assosa University, Assosa, Ethiopia
| | - J. B. Neaton
- Department of Physics, University of California Berkeley, Berkeley, CA 94720, USA
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Kavli Energy Nanosciences Institute, Berkeley, CA 94720, USA
| | - G. A. Asres
- Center for Materials Engineering, Addis Ababa Institute of Technology, Addis Ababa University, School of Multidisciplinary Engineering, Addis Ababa, 1000, Ethiopia
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Ren K, Zheng R, Lou J, Yu J, Sun Q, Li J. Ab Initio Calculations for the Electronic, Interfacial and Optical Properties of Two-Dimensional AlN/Zr 2CO 2 Heterostructure. Front Chem 2021; 9:796695. [PMID: 34869240 PMCID: PMC8632821 DOI: 10.3389/fchem.2021.796695] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2021] [Accepted: 10/25/2021] [Indexed: 11/13/2022] Open
Abstract
Recently, expanding the applications of two-dimensional (2D) materials by constructing van der Waals (vdW) heterostructures has become very popular. In this work, the structural, electronic and optical absorption performances of the heterostructure based on AlN and Zr2CO2 monolayers are studied by first-principles simulation. It is found that AlN/Zr2CO2 heterostructure is a semiconductor with a band gap of 1.790 eV. In the meanwhile, a type-I band structure is constructed in AlN/Zr2CO2 heterostructure, which can provide a potential application of light emitting devices. The electron transfer between AlN and Zr2CO2 monolayer is calculated as 0.1603 |e| in the heterostructure, and the potential of AlN/Zr2CO2 heterostructure decreased by 0.663 eV from AlN layer to Zr2CO2 layer. Beisdes, the AlN/Zr2CO2 vdW heterostructure possesses excellent light absorption ability of in visible light region. Our research provides a theoretical guidance for the designing of advanced functional heterostructures.
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Affiliation(s)
- Kai Ren
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing, China
| | - Ruxin Zheng
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing, China
| | - Junbin Lou
- School of Information Science and Engineering, Jiaxing University, Jiaxing, China
| | - Jin Yu
- School of Materials Science and Engineering, Southeast University, Nanjing, China
| | - Qingyun Sun
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing, China
| | - Jianping Li
- School of Automotive and Transportation Engineering, Shenzhen Polytechnic, Shenzhen, China
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Lou J, Ren K, Huang Z, Huo W, Zhu Z, Yu J. Electronic and optical properties of two-dimensional heterostructures based on Janus XSSe (X = Mo, W) and Mg(OH) 2: a first principles investigation. RSC Adv 2021; 11:29576-29584. [PMID: 35479544 PMCID: PMC9040575 DOI: 10.1039/d1ra05521f] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Accepted: 08/19/2021] [Indexed: 12/12/2022] Open
Abstract
Two-dimensional (2D) materials have attracted numerous investigations after the discovery of graphene. 2D van der Waals (vdW) heterostructures are a new generation of layered materials, which can provide more desirable applications. In this study, the first principles calculation was implemented to study the heterostructures based on Janus TMDs (MoSSe and WSSe) and Mg(OH)2 monolayers, which were constructed by vdW interactions. Both MoSSe/Mg(OH)2 and WSSe/Mg(OH)2 vdW heterostructures have thermal and dynamic stability. Besides, XSSe/Mg(OH)2 (X = Mo, W) possesses a direct bandgap with a type-I band alignment, which provides promising applications for light-emitting devices. The charge density difference was investigated, and 0.003 (or 0.0042) |e| were transferred from MoSSe (or WSSe) layer to Mg(OH)2 layer, and the potential drops were calculated to be 11.59 and 11.44 eV across the interface of the MoSSe/Mg(OH)2 and WSSe/Mg(OH)2 vdW heterostructures, respectively. Furthermore, the MoSSe/Mg(OH)2 and WSSe/Mg(OH)2 vdW heterostructures have excellent optical absorption wave. Our studies exhibit an effective method to construct new heterostructures based on Janus TMDs and develop their applications for future light emitting devices. Two-dimensional (2D) materials have attracted numerous investigations after the discovery of graphene.![]()
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Affiliation(s)
- Junbin Lou
- School of Information Science and Engineering, Jiaxing University Jiaxing Zhejiang China
| | - Kai Ren
- School of Mechanical and Electronic Engineering, Nanjing Forestry University Nanjing Jiangsu China
| | - Zhaoming Huang
- School of Mechanical Engineering, Wanjiang University of Technology Maanshan Anhui China
| | - Wenyi Huo
- School of Mechanical and Electronic Engineering, Nanjing Forestry University Nanjing Jiangsu China
| | - Zhengyang Zhu
- School of Mechanical Engineering, Wanjiang University of Technology Maanshan Anhui China
| | - Jin Yu
- School of Materials Science and Engineering, Southeast University Nanjing Jiangsu China
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