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Wang Z, Qin H, Chen J, Cai X, Kong P, Liu Z, Sun B, Wang H, Ni Y, Chen Y. A semiconductor Sc 2S 3 monolayer with ultrahigh carrier mobility for UV blocking filter application. Phys Chem Chem Phys 2023; 25:5550-5558. [PMID: 36723364 DOI: 10.1039/d2cp04973b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
For humans, ultraviolet (UV) light from sun is harmful to our eyes and eye-related cells. This detrimental fact requires scientists to search for a material that can efficiently absorb UV light while allowing lossless transmission of visible light. Using an unbiased first-principles swarm intelligence structure search, we explored two-dimensional (2D) Sc-S crystals and identified a novel Sc2S3 monolayer with good thermal and dynamical stability. The optoelectronic property simulations revealed that the Sc2S3 monolayer has a wide indirect bandgap (3.05 eV) and possesses an ultrahigh carrier mobility (2.8 × 103 cm2 V-1 s-1). Remarkably, it has almost transparent visible light absorption, while it exhibits an ultrahigh absorption coefficient up to × 105 cm-1 in the ultraviolet region. Via the application of biaxial strain and thickness modulation, the UV light absorption coefficients of Sc2S3 can be further improved. These findings manifest an attractive UV blocking optoelectronic characteristic of the Sc2S3 configuration as a prototypical nanomaterial for the potential application in UV blocking filters.
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Affiliation(s)
- Zheng Wang
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China.
| | - Haifei Qin
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jiao Chen
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China.
| | - Xinyong Cai
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China.
| | - Panlong Kong
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China.
| | - Zhen Liu
- Department of Physics, Beijing Normal University, Beijing 100875, China.
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shaanxi 710049, P. R. China
| | - Hongyan Wang
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China.
| | - Yuxiang Ni
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China.
| | - Yuanzheng Chen
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China.
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Qin H, Chen J, Sun B, Tang Y, Ni Y, Chen Z, Wang H, Chen Y. 2D auxetic material with intrinsic ferromagnetism: a copper halide (CuCl 2) monolayer. Phys Chem Chem Phys 2021; 23:22078-22085. [PMID: 34570850 DOI: 10.1039/d1cp02834k] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
The discovery of ferromagnetism in monolayer transition metal halides exemplified by CrI3 has opened a new avenue in the field of two-dimensional (2D) magnetic materials, and more such 2D materials are waiting to be explored. Herein, using an unbiased structure search combined with first-principles calculations, we have identified a novel CuCl2 monolayer, which exhibits not only intrinsic ferromagnetism but also auxetic mechanical properties originating from the interplay of lattice and Cu-Cl tetrahedron symmetries. The predicted Curie temperature of CuCl2 reaches ∼47 K, and its ferromagnetism is associated with the strong hybridization between the Cu 3d and Cl 3p states in the configuration. Moreover, upon biaxial tensile strain or carrier doping, the CuCl2 monolayer can be converted from ferromagnetic to non-magnetic and from half-metal to metal. These properties endow this CuCl2 monolayer with great potential for applications in auxetic/spintronic nanodevices.
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Affiliation(s)
- Haifei Qin
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Jiao Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Bai Sun
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Yongliang Tang
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Yuxiang Ni
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Zhongfang Chen
- Department of Chemistry, University of Puerto Rico, Rio Piedras Campus, San Juan, PR 00931, USA.
| | - Hongyan Wang
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Yuanzheng Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China. .,Beijing Computational Science Research Center, Haidian District, Beijing 100193, China.,Department of Physics and Centre for Advanced Two-Dimensional Materials, National University of Singapore, Singapore 117551, Singapore
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