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Zhen J, Liu Y, Dong H, Zhang Z, Zhang S, Wang G, Zhou Y, Wan S, Chen B, Liu G. Pressure-induced disorder and nanosizing inhibits superconductivity in In 2Te 3. NANOTECHNOLOGY 2023; 35:05LT01. [PMID: 37871598 DOI: 10.1088/1361-6528/ad0602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 10/22/2023] [Indexed: 10/25/2023]
Abstract
The generation of disorder often gives rise to profound and irreversible physical phenomena. Here, we explore the influence of disorder on the superconducting properties of In2Te3through comprehensive high-pressure investigations. Building upon previous findings, we investigated the progressive suppression of superconductivity in In2Te3during the depressurization process: the increased disorder that ultimately leads to the complete disappearance of the superconducting state. Simultaneously, our high-pressure x-ray diffraction analysis reveals an irreversible structural phase transition. Furthermore, microstructure analysis using transmission electron microscopy clearly demonstrates both grain refinement and a substantial enhancement of disorder. These findings not only provide valuable insights into the mechanism by which disorder suppresses superconductivity, but also offer guidance for future advancements in the fabrication of atmospheric-pressure superconductors.
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Affiliation(s)
- Jiapeng Zhen
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Ying Liu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Ziyou Zhang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Shihui Zhang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Gui Wang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Yan Zhou
- School of Physics and Technology, Nanjing Normal University, Nanjing 210023, People's Republic of China
| | - Shun Wan
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Science, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China
| | - Guanjun Liu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
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